Inventor · disambiguated record
John B. Campi, Jr.
Also filed as: CAMPI JOHN B · CAMPI JR JOHN B
40 granted patents·1 pending application·224 citations·filing 2008–2019
98Inventor score
Top patents by PatentIndex Score
41 records- 0198US9818542B2Gate-all-around fin deviceIBM·Filed 2015·Granted Nov 14, 2017·19 cites·12 claims
- 0298US9590108B2Gate-all-around fin deviceIBM·Filed 2016·Granted Mar 7, 2017·20 cites·12 claims
- 0398US9397163B2Gate-all-around fin deviceIBM·Filed 2015·Granted Jul 19, 2016·19 cites·9 claims
- 0498US9281379B1Gate-all-around fin deviceIBM·Filed 2014·Granted Mar 8, 2016·31 cites·19 claims
- 0597US9923096B2Gate-all-around fin deviceIBM·Filed 2017·Granted Mar 20, 2018·12 cites·12 claims
- 0696US9911852B2Gate-all-around fin deviceIBM·Filed 2016·Granted Mar 6, 2018·8 cites·14 claims
- 0795US10381483B2Gate-all-around fin deviceIBM·Filed 2017·Granted Aug 13, 2019·5 cites·12 claims
- 0895US10147822B2Gate-all-around fin deviceIBM·Filed 2017·Granted Dec 4, 2018·5 cites·10 claims
- 0995US10090400B2Gate-all-around fin deviceIBM·Filed 2017·Granted Oct 2, 2018·6 cites·8 claims
- 1095US9978874B2Gate-all-around fin deviceIBM·Filed 2017·Granted May 22, 2018·6 cites·20 claims
- 1194US10573754B2Gate-all around fin deviceIBM·Filed 2017·Granted Feb 25, 2020·4 cites·11 claims
- 1294US10090301B2Gate-all-around fin deviceIBM·Filed 2017·Granted Oct 2, 2018·4 cites·8 claims
- 1394US9041127B2FinFET device technology with LDMOS structures for high voltage operationsIBM·Filed 2013·Granted May 26, 2015·19 cites·16 claims
- 1493US10658514B2Gate-all-around fin deviceIBM·Filed 2018·Granted May 19, 2020·2 cites·20 claims
- 1592US10381484B2Gate-all-around fin deviceIBM·Filed 2017·Granted Aug 13, 2019·3 cites·12 claims
- 1687US10974433B2Gate-all-around fin deviceIBM·Filed 2019·Granted Apr 13, 2021·1 cites·12 claims
- 1787US10593805B2Gate-all-around fin deviceIBM·Filed 2019·Granted Mar 17, 2020·1 cites·11 claims
- 1887US9236374B2Fin contacted electrostatic discharge (ESD) devices with improved heat distributionIBM·Filed 2014·Granted Jan 12, 2016·8 cites·19 claims
- 1986US8299533B2Vertical NPNP structure in a triple well CMOS processCAMPI JR JOHN B·Filed 2010·Granted Oct 30, 2012·8 cites·24 claims
- 2086US8168500B2Double gate depletion mode MOSFETCAMPI JOHN B·Filed 2011·Granted May 1, 2012·8 cites·20 claims
- 2185US10388793B2Gate-all-around fin deviceIBM·Filed 2017·Granted Aug 20, 2019·1 cites·16 claims
- 2285US8760827B2Robust ESD protection circuit, method and design structure for tolerant and failsafe designsCAMPI JR JOHN B·Filed 2009·Granted Jun 24, 2014·12 cites·25 claims
- 2381US8354722B2SCR/MOS clamp for ESD protection of integrated circuitsIBM·Filed 2011·Granted Jan 15, 2013·6 cites·23 claims
- 2481US8350329B2Low trigger voltage electrostatic discharge NFET in triple well CMOS technologyIBM·Filed 2010·Granted Jan 8, 2013·6 cites·16 claims
- 2578US8513738B2ESD field-effect transistor and integrated diffusion resistorCAMPI JR JOHN B·Filed 2011·Granted Aug 20, 2013·5 cites·26 claims
- 2675US11141902B2Gate-all-around fin deviceIBM·Filed 2019·Granted Oct 12, 2021·0 cites·13 claims
- 2775US11130270B2Gate-all-around fin deviceIBM·Filed 2019·Granted Sep 28, 2021·0 cites·12 claims
- 2873US10940627B2Gate-all-around fin deviceIBM·Filed 2018·Granted Mar 9, 2021·0 cites·13 claims
- 2973US10770594B2Gate-all-around fin deviceIBM·Filed 2018·Granted Sep 8, 2020·0 cites·8 claims
- 3070US8377754B1Stress enhanced junction engineering for latchup SCRIBM·Filed 2011·Granted Feb 19, 2013·2 cites·20 claims
- 3167US8614489B2Vertical NPNP structure in a triple well CMOS processCAMPI JOHN B·Filed 2012·Granted Dec 24, 2013·2 cites·19 claims
- 3260US8634172B2Silicon controlled rectifier based electrostatic discharge protection circuit with integrated JFETs, method of operation and design structureCAMPI JR JOHN B·Filed 2010·Granted Jan 21, 2014·1 cites·22 claims
- 3355US9059278B2High voltage lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) having a deep fully depleted drain drift regionIBM·Filed 2013·Granted Jun 16, 2015·0 cites·7 claims
- 3454US7902606B2Double gate depletion mode MOSFETIBM·Filed 2008·Granted Mar 8, 2011·0 cites·12 claims
- 3553US8674400B2Stress enhanced junction engineering for latchup SCRIBM·Filed 2013·Granted Mar 18, 2014·0 cites·7 claims
- 3651US9349732B2High voltage lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) having a deep fully depleted drain drift regionIBM·Filed 2015·Granted May 24, 2016·0 cites·6 claims
- 3751US8363367B2Electrical overstress protection circuitIBM·Filed 2009·Granted Jan 29, 2013·0 cites·21 claims
- 3850US2016197080A1High voltage lateral double-diffused metal oxide semiconductor field effect transistor (ldmosfet) having a deep fully depleted drain drift regionGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 3949US9453878B2Characterization of interface resistance in a multi-layer conductive structureIBM·Filed 2013·Granted Sep 27, 2016·0 cites·25 claims
- 4045US10283959B2ESD state-controlled semiconductor-controlled rectifierIBM·Filed 2014·Granted May 7, 2019·0 cites·15 claims
- 4142US10347622B2Silicon-controlled rectifiers having a cathode coupled by a contact with a diode triggerGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 9, 2019·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →