Assignee
CAMPI JR JOHN B
US·4 granted patents·26 citations·filing 2009–2011
Technology mixH10D4
Top patents by PatentIndex Score
4 records- 0186US8299533B2Vertical NPNP structure in a triple well CMOS processCAMPI JR JOHN B·Filed 2010·Granted Oct 30, 2012·8 cites·24 claims
- 0285US8760827B2Robust ESD protection circuit, method and design structure for tolerant and failsafe designsCAMPI JR JOHN B·Filed 2009·Granted Jun 24, 2014·12 cites·25 claims
- 0378US8513738B2ESD field-effect transistor and integrated diffusion resistorCAMPI JR JOHN B·Filed 2011·Granted Aug 20, 2013·5 cites·26 claims
- 0460US8634172B2Silicon controlled rectifier based electrostatic discharge protection circuit with integrated JFETs, method of operation and design structureCAMPI JR JOHN B·Filed 2010·Granted Jan 21, 2014·1 cites·22 claims
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