Inventor · disambiguated record
Hyung-Shin Kwon
Also filed as: KWON HYUNG S · KWON HYUNG-SHIN
17 granted patents·4 pending applications·179 citations·filing 2002–2016
94Inventor score
Top patents by PatentIndex Score
21 records- 0190US6806180B2Unitary interconnection structures integral with a dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 19, 2004·52 cites·26 claims
- 0282US8619484B2Semiconductor device, method of adjusting load capacitance for the same, and semiconductor system including the sameLIM JONG HYOUNG·Filed 2011·Granted Dec 31, 2013·9 cites·15 claims
- 0382US6551887B2Method of forming a spacerSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 22, 2003·31 cites·17 claims
- 0480US7312144B2Unitary interconnection structures integral with a dielectric layer and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 25, 2007·24 cites·21 claims
- 0578US7696048B2Method of improving gate resistance in a memory arraySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 13, 2010·8 cites·12 claims
- 0677US7172944B2Method of fabricating a semiconductor device having an elevated source/drainSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 6, 2007·6 cites·50 claims
- 0772US6767814B2Semiconductor device having silicide thin film and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jul 27, 2004·14 cites·14 claims
- 0865US8415225B2Methods of manufacturing semiconductor devicesKWON HYUNG-SHIN·Filed 2011·Granted Apr 9, 2013·2 cites·9 claims
- 0965US7348231B2Methods of fabricating semiconductor devices having insulating layers with differing compressive stressesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 25, 2008·3 cites·19 claims
- 1063US7151031B2Methods of fabricating semiconductor devices having gate insulating layers with differing thicknessesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 19, 2006·7 cites·11 claims
- 1162US7002223B2Semiconductor device having elevated source/drainSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 21, 2006·9 cites·35 claims
- 1259US8558347B2Semiconductor devices and methods of manufacturing the sameKWON HYUNG-SHIN·Filed 2013·Granted Oct 15, 2013·1 cites·11 claims
- 1353US9053963B2Multiple well bias memorySAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 9, 2015·1 cites·20 claims
- 1452US7385260B2Semiconductor device having silicide thin film and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 10, 2008·4 cites·15 claims
- 1551US6635539B2Method for fabricating a MOS transistor using a self-aligned silicide techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 21, 2003·5 cites·16 claims
- 1649US2007290280A1Semiconductor device having silicide thin film and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1749US2007293030A1Semiconductor device having silicide thin film and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1847US2007069282A1Semiconductor device having gate insulating layers with differing thicknessesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1943US10431320B2Semiconductor memory device, method of testing the same and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 1, 2019·0 cites·18 claims
- 2042US6815275B2Methods for fabricating metal silicide structures using an etch stopping capping layerSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 9, 2004·3 cites·37 claims
- 2140US2014241076A1Semiconductor memory device, method of testing the same and method of operating the sameKWON HYUNG-SHIN·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →