Inventor · disambiguated record
Lingyi A. Zheng
Also filed as: ZHENG LINGYI A
49 granted patents·10 pending applications·1,234 citations·filing 2000–2013
98Inventor score
Top patents by PatentIndex Score
59 records- 0199US7422635B2Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpiecesMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 9, 2008·483 cites·17 claims
- 0298US6551893B1Atomic layer deposition of capacitor dielectricMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 22, 2003·172 cites·21 claims
- 0396US6943078B1Method and structure for reducing leakage current in capacitorsMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 13, 2005·98 cites·59 claims
- 0493US6746930B2Oxygen barrier for cell container processMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 8, 2004·60 cites·23 claims
- 0592US7647886B2Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambersMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 19, 2010·45 cites·8 claims
- 0688US6794245B2Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modulesMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 21, 2004·32 cites·53 claims
- 0786US7771537B2Methods and systems for controlling temperature during microfeature workpiece processing, E.G. CVD depositionMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 10, 2010·5 cites·13 claims
- 0886US7279398B2Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpiecesMICRON TECHNOLOGY INC·Filed 2006·Granted Oct 9, 2007·6 cites·12 claims
- 0985US7056806B2Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpiecesMICRON TECHNOLOGY INC·Filed 2003·Granted Jun 6, 2006·23 cites·31 claims
- 1085US6653199B2Method of forming inside rough and outside smooth HSG electrodes and capacitor structureMICRON TECHNOLOGY INC·Filed 2001·Granted Nov 25, 2003·24 cites·121 claims
- 1183US7378313B2Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modulesMICRON TECHNOLOGY INC·Filed 2006·Granted May 27, 2008·7 cites·25 claims
- 1283US6927170B2Methods for making semiconductor device structures with capacitor containers and contact apertures having increased aspect ratiosMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 9, 2005·26 cites·19 claims
- 1383US6465373B1Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2Cl2) interface seeding layerMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 15, 2002·20 cites·54 claims
- 1481US7112544B2Method of atomic layer deposition on plural semiconductor substrates simultaneouslyMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 26, 2006·16 cites·16 claims
- 1580US7052957B2Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modulesMICRON TECHNOLOGY INC·Filed 2004·Granted May 30, 2006·17 cites·33 claims
- 1680US6835674B2Methods for treating pluralities of discrete semiconductor substratesMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 28, 2004·15 cites·20 claims
- 1780US6812150B2Methods for making semiconductor device structures with capacitor containers and contact apertures having increased aspect ratiosMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 2, 2004·22 cites·38 claims
- 1879US7258892B2Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD depositionMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 21, 2007·13 cites·27 claims
- 1978US7235138B2Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpiecesMICRON TECHNOLOGY INC·Filed 2003·Granted Jun 26, 2007·14 cites·20 claims
- 2078US6538274B2Reduction of damage in semiconductor container capacitorsMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 25, 2003·19 cites·60 claims
- 2174US8384192B2Methods for forming small-scale capacitor structuresMICRON TECHNOLOGY INC·Filed 2011·Granted Feb 26, 2013·2 cites·22 claims
- 2274US6825081B2Cell nitride nucleation on insulative layers and reduced corner leakage of container capacitorsMICRON TECHNOLOGY INC·Filed 2001·Granted Nov 30, 2004·14 cites·103 claims
- 2373US6613628B2Method and structure for reducing leakage current in capacitorsMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 2, 2003·12 cites·5 claims
- 2473US6583441B2Capacitor constructions comprising a nitrogen-containing layer over a rugged polysilicon layerMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 24, 2003·11 cites·15 claims
- 2572US6831319B2Cell nitride nucleation on insulative layers and reduced corner leakage of container capacitorsMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 14, 2004·12 cites·75 claims
- 2671US7344755B2Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambersMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 18, 2008·10 cites·12 claims
- 2768US7220312B2Methods for treating semiconductor substratesMICRON TECHNOLOGY INC·Filed 2002·Granted May 22, 2007·7 cites·20 claims
- 2868US7183208B2Methods for treating pluralities of discrete semiconductor substratesMICRON TECHNOLOGY INC·Filed 2003·Granted Feb 27, 2007·7 cites·39 claims
- 2967US7906393B2Methods for forming small-scale capacitor structuresMICRON TECHNOLOGY INC·Filed 2004·Granted Mar 15, 2011·8 cites·44 claims
- 3065US6607965B2Methods of forming capacitorsMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 19, 2003·7 cites·20 claims
- 3163US6803621B2Oxygen barrier for cell container processMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 12, 2004·7 cites·25 claims
- 3261US2006205187A1Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpiecesMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 3361US2006213440A1Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpiecesMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 3459US7754576B2Method of forming inside rough and outside smooth HSG electrodes and capacitor structureMICRON TECHNOLOGY INC·Filed 2008·Granted Jul 13, 2010·0 cites·29 claims
- 3559US6704188B2Ultra thin TCS (SiCL4) cell nitride for dram capacitor with DCS (SiH2Cl2) interface seeding layerMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 9, 2004·4 cites·50 claims
- 3659US2006198955A1Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpiecesMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 3756US8518184B2Methods and systems for controlling temperature during microfeature workpiece processing, E.G., CVD depositionBEAMAN KEVIN L·Filed 2010·Granted Aug 27, 2013·0 cites·22 claims
- 3856US8013371B2Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2Cl2) interface seeding layerMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 6, 2011·3 cites·30 claims
- 3956US7214981B2Semiconductor devices having double-sided hemispherical silicon grain electrodesMICRON TECHNOLOGY INC·Filed 2004·Granted May 8, 2007·4 cites·27 claims
- 4055US7459746B2Method of forming inside rough and outside smooth HSG electrodes and capacitor structureMICRON TECHNOLOGY INC·Filed 2007·Granted Dec 2, 2008·0 cites·26 claims
- 4153US7247581B2Methods for treating pluralities of discrete semiconductor substratesMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 24, 2007·0 cites·8 claims
- 4253US2013166057A1Methods for forming small-scale capacitor structuresMICRON TECHNOLOGY INC·Filed 2013·Application pending·0 cites
- 4351US7528435B2Semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2006·Granted May 5, 2009·0 cites·5 claims
- 4451US7148118B2Methods of forming metal nitride, and methods of forming capacitor constructionsMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 12, 2006·2 cites·87 claims
- 4550US7351640B2Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modulesMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 1, 2008·0 cites·14 claims
- 4649US8120124B2Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2Cl2) interface seeding layerZHENG LINGYI A·Filed 2007·Granted Feb 21, 2012·0 cites·20 claims
- 4749US7233042B2Method of forming inside rough and outside smooth HSG electrodes and capacitor structureMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 19, 2007·1 cites·7 claims
- 4849US6881682B2Method and structure for reducing leakage current in capacitorsMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 19, 2005·2 cites·11 claims
- 4948US6890818B2Methods of forming semiconductor capacitors and memory devicesMICRON TECHNOLOGY INC·Filed 2003·Granted May 10, 2005·2 cites·69 claims
- 5048US6888186B2Reduction of damage in semiconductor container capacitorsMICRON TECHNOLOGY INC·Filed 2003·Granted May 3, 2005·2 cites·30 claims
Showing the top 50 of 59 patent records by PatentIndex Score.
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