Methods for forming small-scale capacitor structures

Abstract

The present disclosure provides small scale capacitors (e.g., DRAM capacitors) and methods of forming such capacitors. One exemplary implementation provides a method of fabricating a capacitor that includes sequentially forming a first electrode, a dielectric layer, and a second electrode. At least one of the electrodes may be formed by a) reacting two precursors to deposit a first conductive layer at a first deposition rate, and b) depositing a second conductive layer at a second, lower deposition rate by depositing a precursor layer of one precursor at least one monolayer thick and exposing that precursor layer to another precursor to form a nanolayer reaction product. The second conductive layer may be in contact with the dielectric layer and have a thickness of no greater than about 50 Å.

1 . A microfeature workpiece processing system comprising:
 an enclosure defining a process chamber adapted to receive a microfeature workpiece;   a gas supply adapted to selectively deliver a first gaseous precursor, a second gaseous precursor, and a third gaseous precursor to the process chamber; and   a programmable controller operatively coupled to the gas supply, the controller being programmed to:   contemporaneously introduce the first gaseous precursor and the second gaseous precursor from the gas supply to the process chamber to deposit a first electrically conductive layer on a surface of the microfeature workpiece;   terminate introduction of at least one of the first and second gaseous precursors;   alternately introduce a quantity of the first gaseous precursor and a quantity of the second gaseous precursor from the gas supply to the process chamber to form a second electrically conductive layer at a location spaced outwardly from the surface of the microfeature workpiece, the second electrically conductive layer having a thickness of no greater than  50 A; and   thereafter, introduce the third gaseous precursor to the process chamber to form a dielectric layer on the second electrically conductive layer.   
     
     
         2 . The microfeature workpiece processing system of  claim 1  wherein the gas supply is further adapted to deliver a purge gas and the controller is further programmed to purge the process chamber with the purge gas after introducing the quantity of the first gaseous precursor and before introducing the quantity of the second gaseous precursor. 
     
     
         3 . The microfeature workpiece processing system of  claim 1  wherein the first gaseous precursor comprises titanium and the second gaseous precursor comprises nitrogen.