Inventor · disambiguated record
Yoshinao Miura
Also filed as: MIURA YOSHINAO
35 granted patents·12 pending applications·352 citations·filing 1997–2022
97Inventor score
Files withRENESAS ELECTRONICS CORP25NEC ELECTRONICS CORP15NEC CORP3AIST1Renesas Electronics Electronics1
Top patents by PatentIndex Score
47 records- 0198US7361952B2Semiconductor apparatus and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2005·Granted Apr 22, 2008·185 cites·19 claims
- 0294US9559183B2Semiconductor device with varying thickness of insulating film between electrode and gate electrode and method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Jan 31, 2017·14 cites·12 claims
- 0393US7335949B2Semiconductor device and method of fabricating the sameNEC ELECTRONICS CORP·Filed 2005·Granted Feb 26, 2008·23 cites·19 claims
- 0492US9306051B2Semiconductor device using a nitride semiconductorRENESAS ELECTRONICS CORP·Filed 2015·Granted Apr 5, 2016·9 cites·20 claims
- 0588US9520489B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Dec 13, 2016·6 cites·14 claims
- 0687US6346465B1Semiconductor device with silicide contact structure and fabrication method thereofNEC CORP·Filed 2000·Granted Feb 12, 2002·47 cites·5 claims
- 0785US9984884B2Method of manufacturing semiconductor device with a multi-layered gate dielectricRENESAS ELECTRONICS CORP·Filed 2016·Granted May 29, 2018·3 cites·3 claims
- 0882US9601609B2Semiconductor deviceRenesas Electronics Electronics·Filed 2014·Granted Mar 21, 2017·6 cites·6 claims
- 0982US7432134B2Semiconductor device and method of fabricating the sameNEC ELECTRONICS CORP·Filed 2007·Granted Oct 7, 2008·8 cites·7 claims
- 1081US9691757B2Semiconductor device including transistors and diodes and a first line extending between the transistors and diodesRENESAS ELECTRONICS CORP·Filed 2015·Granted Jun 27, 2017·3 cites·20 claims
- 1179US10014403B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Jul 3, 2018·2 cites·11 claims
- 1278US9324851B2DC/DC converter circuit of semiconductor device having a first transistor of a normally-off type and a second transistor of a normally-on typeRENESAS ELECTRONICS CORP·Filed 2013·Granted Apr 26, 2016·4 cites·5 claims
- 1377US9083257B2Power conversion circuit, multiphase voltage regulator, and power conversion methodTATENO KOJI·Filed 2012·Granted Jul 14, 2015·5 cites·16 claims
- 1476US8035158B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2008·Granted Oct 11, 2011·5 cites·10 claims
- 1573US7361953B2Semiconductor apparatus having a column region with differing impurity concentrationsNEC ELECTRONICS CORP·Filed 2006·Granted Apr 22, 2008·4 cites·7 claims
- 1671US10229992B2Semiconductor device and manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Mar 12, 2019·1 cites·20 claims
- 1768US10134850B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Nov 20, 2018·1 cites·5 claims
- 1868US10032736B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Jul 24, 2018·2 cites·18 claims
- 1968US7919374B2Method for manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Apr 5, 2011·3 cites·9 claims
- 2066US9054073B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Jun 9, 2015·1 cites·8 claims
- 2161US7538388B2Semiconductor device with a super-junctionNEC ELECTRONICS CORP·Filed 2006·Granted May 26, 2009·2 cites·8 claims
- 2259US10410868B2Semiconductor device and method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Sep 10, 2019·0 cites·4 claims
- 2357US7825466B2Super-junction semiconductor element and method of fabricating the sameNEC ELECTRONICS CORP·Filed 2005·Granted Nov 2, 2010·1 cites·11 claims
- 2454US9793196B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Oct 17, 2017·0 cites·16 claims
- 2553US2024213364A1Semiconductor device and manufacturing method for semiconductor deviceAIST·Filed 2022·Application pending·0 cites
- 2652US10135337B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Nov 20, 2018·0 cites·6 claims
- 2752US9496203B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 15, 2016·0 cites·7 claims
- 2852US9153683B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Oct 6, 2015·0 cites·13 claims
- 2951US9667147B2Semiconductor device with DC/DC converter circuitRENESAS ELECTRONICS CORP·Filed 2016·Granted May 30, 2017·0 cites·6 claims
- 3049US9837519B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Dec 5, 2017·0 cites·18 claims
- 3149US2017271326A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 3249US2015280571A1Power conversion circuit, multiphase voltage regulator, and power conversion methodRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 3348US2015364467A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 3447US7345337B2Semiconductor apparatus having a divided column regionNEC ELECTRONICS CORP·Filed 2004·Granted Mar 18, 2008·2 cites·11 claims
- 3546US7829417B2Semiconductor apparatus and method of manufacturing semiconductor apparatusNEC ELECTRONICS CORP·Filed 2008·Granted Nov 9, 2010·0 cites·9 claims
- 3646US6048795AProcess of fabricating a semiconductor device having nitrogen-containing silicon layer and refractory metal layerNEC CORP·Filed 1997·Granted Apr 11, 2000·13 cites·25 claims
- 3746US2007052015A1Semiconductor deviceNEC ELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 3845US6559041B2Semiconductor device and method for manufacturing sameNEC CORP·Filed 2002·Granted May 6, 2003·2 cites·11 claims
- 3945US2006124995A1Semiconductor device and manufacturing method for semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Application pending·0 cites
- 4042US2010044786A1Semiconductor deviceNEC ELECTRONICS CORP·Filed 2009·Application pending·0 cites
- 4141US2007138550A1Semiconductor device and method for manufacturing semiconductor deviceNEC ELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 4241US2008197381A1Semiconductor device and method for manufacturing sameNEC ELECTRONICS CORP·Filed 2008·Application pending·0 cites
- 4340US2007029543A1Semiconductor deviceNEC ELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 4440US2006244056A1Semiconductor deviceNEC ELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 4538US10290583B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted May 14, 2019·0 cites·15 claims
- 4636US9748225B2Semiconductor device with power transistors coupled to diodesRENESAS ELECTRONICS CORP·Filed 2015·Granted Aug 29, 2017·0 cites·21 claims
- 4734US2006130746A1Method for forming nickel silicide film, method for manufacturing semiconductor device, and method for etching nickel silicideTERASHIMA KOICHI·Filed 2004·Application pending·0 cites
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