Semiconductor device

Abstract

A semiconductor device includes a substrate, a plurality of transistors formed on a transistor region of the substrate, a plurality of diodes formed on a diode region of the substrate, the transistors and the diodes being arranged in a first direction, a first line formed over the substrate and extending between the transistors and the diodes, a plurality of first branch lines extending from the first line in the first direction to form a drain electrode of the transistors, and a plurality of second branch lines extending from the first line in the first direction to form an anode electrode of the diodes.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a substrate;   a plurality of transistors formed on a transistor region of the substrate;   a plurality of diodes formed on a diode region of the substrate, the transistors and the diodes being arranged in a first direction,   a first line formed over the substrate and extending between the transistors and the diodes;   a plurality of first branch lines extending from the first line in the first direction to form a drain electrode of the transistors; and   a plurality of second branch lines extending from the first line in the first direction to form an anode electrode of the diodes.   
     
     
         2 . The semiconductor device according to  claim 1 ,
 wherein drains and sources of the transistors are alternately disposed in a direction along the first line,   wherein the first branch lines are disposed spaced apart from one another,   wherein anodes and cathodes of the diodes are alternately disposed in a direction along the first line, and   wherein the second branch lines are disposed spaced apart from one another.   
     
     
         3 . The semiconductor device according to  claim 2 , further comprising:
 a second line extending, on a side opposite to the first line across the transistors, in the direction in which the first line extends;   a plurality of third branch lines extending from the second line in the first direction to form a source electrode of the transistors, the third branch lines being disposed to oppose the first branch lines;   a third line extending, on a side opposite to the first line across the diodes, in the direction in which the first line extends; and   a plurality of fourth branch lines extending from the third line in the first direction to form a cathode electrode of the diodes, the fourth branch lines being disposed to oppose the second branch lines.   
     
     
         4 . The semiconductor device according to  claim 3 ,
 wherein the first branch lines are coupled to the drains of the transistors,   wherein the third branch lines are coupled to the sources of the transistors,   wherein the second branch lines are coupled to the anodes of the diodes, and   wherein the fourth branch lines are coupled to the cathodes of the diodes.   
     
     
         5 . The semiconductor device according to  claim 3 ,
 wherein, in the first direction, the second line, the transistors, the first line, the diodes, the third line, the diodes, the first line, and the transistors are repeatedly disposed in this order, and   wherein the fourth branch lines extend from two sides of the third line.   
     
     
         6 . The semiconductor device according to  claim 3 ,
 wherein the substrate is rectangular,   wherein a first side and a second side opposing the first side of the substrate extend in the first direction, and   the semiconductor device further comprising:
 a first lead terminal opposing the first side; 
 a second lead terminal opposing the second side; 
 a first coupling member coupling the first line to the first lead terminal; and 
 a second coupling member coupling the third line to the second lead terminal. 
   
     
     
         7 . The semiconductor device according to  claim 6 , further comprising:
 a gate line extending along the second side of the substrate and coupled to the gate electrodes of the transistors;   a third lead terminal opposing the second side of the substrate; and   a third coupling member coupling the gate line to the third lead terminal.   
     
     
         8 . The semiconductor device according to  claim 6 ,
 wherein the substrate includes:
 a semiconductor substrate doped with impurities and having a first surface and a second surface opposing the first surface; 
 a compound semiconductor layer formed over the first surface of the semiconductor substrate; and 
 a buried contact buried in the compound semiconductor layer, the buried contact having a lower portion coupled to the semiconductor substrate and an upper surface coupled to the second line, and 
   wherein the semiconductor device further comprises a substrate mounting part supporting the second surface, the substrate mounting part having at least a conductive surface contacting the second surface of the semiconductor substrate.   
     
     
         9 . The semiconductor device according to  claim 1 , wherein the first line extends in a second direction between the transistors and the diodes, the second direction being perpendicular to the first direction. 
     
     
         10 . The semiconductor device according to  claim 1 , wherein the plurality of first branch lines extend in the first direction from a first side of the first line, and the plurality of second branch lines extend in the first direction from a second side of the first line which is opposite the first side. 
     
     
         11 . The semiconductor device according to  claim 1 , further comprising:
 a second line extending in a second direction perpendicular to the first direction; and   a plurality of third branch lines extending in the first direction from the second line to form a source electrode of the transistors.   
     
     
         12 . A semiconductor device, comprising:
 a transistor region comprising a plurality of transistors formed on a substrate;   a diode region comprising a plurality of diodes formed on the substrate;   a first line formed between the transistor region and the diode region;   a plurality of first branch lines extending from the first line into the transistor region to form a drain electrode of the plurality of transistors; and   a plurality of second branch lines extending from the first line into the diode region to form an anode electrode of the plurality of diodes.   
     
     
         13 . The semiconductor device according to  claim 12 , wherein the plurality of first branch lines extend from a first side of the first line, and the plurality of second branch lines extend from a second side of the first line which is opposite the first side. 
     
     
         14 . The semiconductor device according to  claim 12 , wherein the plurality of first branch lines and the plurality of second branch lines extend in a first direction, and
 wherein the first line extends in a second direction between the transistor region and the diode region, the second direction being perpendicular to the first direction.   
     
     
         15 . The semiconductor device according to  claim 14 , further comprising:
 a second line extending in the second direction; and   a plurality of third branch lines extending from the second line into the transistor region to form a source electrode of the plurality of transistors.   
     
     
         16 . The semiconductor device according to  claim 15 , further comprising:
 a third line extending in the second direction; and   a plurality of fourth branch lines extending from the third line into the diode region to form a cathode electrode of the plurality of diodes.   
     
     
         17 . A semiconductor device, comprising:
 a substrate including a transistor region and a diode region;   a drain-anode line formed on the substrate and extending in a first direction between the transistor region and the diode region;   an interlayer insulating film formed on the drain-anode line; and   a drain-anode bus line formed on the interlayer insulating film over the drain-anode line, and extending in the first direction.   
     
     
         18 . The semiconductor device according to  claim 17 , further comprising:
 a plurality of transistors formed in the transistor region of the substrate; and   a plurality of diodes formed in the diode region of the substrate, the transistors and the diodes being arranged in the first direction.   
     
     
         19 . The semiconductor device according to  claim 18 , further comprising:
 a plurality of first branch lines extending from the first line in the first direction to form a drain electrode of the transistors.   
     
     
         20 . The semiconductor device according to  claim 19 , further comprising:
 a plurality of second branch lines extending from the first line in the first direction to form an anode electrode of the diodes.