Inventor · disambiguated record
Prasanna Khare
Also filed as: KHARE PRASANNA
49 granted patents·7 pending applications·250 citations·filing 2008–2023
98Inventor score
Top patents by PatentIndex Score
56 records- 0198US8956942B2Method of forming a fully substrate-isolated FinFET transistorST MICROELECTRONICS INC·Filed 2012·Granted Feb 17, 2015·41 cites·16 claims
- 0297US8759874B1FinFET device with isolated channelST MICROELECTRONICS INC·Filed 2012·Granted Jun 24, 2014·31 cites·20 claims
- 0395US9093496B2Process for faciltiating fin isolation schemesGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 28, 2015·19 cites·21 claims
- 0493US10062690B2Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methodsST MICROELECTRONICS INC·Filed 2016·Granted Aug 28, 2018·5 cites·16 claims
- 0593US9520393B2Fully substrate-isolated FinFET transistorST MICROELECTRONICS INC·Filed 2014·Granted Dec 13, 2016·9 cites·21 claims
- 0693US9093556B2Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methodsLIU QING·Filed 2012·Granted Jul 28, 2015·9 cites·12 claims
- 0792US9685380B2Method to co-integrate SiGe and Si channels for finFET devicesST MICROELECTRONICS INC·Filed 2013·Granted Jun 20, 2017·8 cites·15 claims
- 0892US9349730B2Fin transformation process and isolation structures facilitating different Fin isolation schemesGLOBALFOUNDRIES INC·Filed 2013·Granted May 24, 2016·11 cites·20 claims
- 0992US9171757B2Dual shallow trench isolation liner for preventing electrical shortsIBM·Filed 2013·Granted Oct 27, 2015·8 cites·9 claims
- 1091US9166023B2Bulk finFET semiconductor-on-nothing integrationST MICROELECTRONICS INC·Filed 2013·Granted Oct 20, 2015·13 cites·17 claims
- 1191US8703550B2Dual shallow trench isolation liner for preventing electrical shortsDORIS BRUCE B·Filed 2012·Granted Apr 22, 2014·8 cites·11 claims
- 1289US10340195B2Method to co-integrate SiGe and Si channels for finFET devicesST MICROELECTRONICS INC·Filed 2017·Granted Jul 2, 2019·3 cites·20 claims
- 1389US9620507B2Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon-germanium regionST MICROELECTRONICS INC·Filed 2013·Granted Apr 11, 2017·6 cites·22 claims
- 1489US9437504B2Method for the formation of fin structures for FinFET devicesST MICROELECTRONICS INC·Filed 2015·Granted Sep 6, 2016·5 cites·24 claims
- 1589US9012999B2Semiconductor device with an inclined source/drain and associated methodsLIU QING·Filed 2012·Granted Apr 21, 2015·10 cites·17 claims
- 1689US8828851B2Method to enable the formation of silicon germanium channel of FDSOI devices for PFET threshold voltage engineeringLOUBET NICOLAS·Filed 2012·Granted Sep 9, 2014·15 cites·17 claims
- 1788US10170546B2Fully substrate-isolated FinFET transistorST MICROELECTRONICS INC·Filed 2018·Granted Jan 1, 2019·3 cites·20 claims
- 1887US9847260B2Method to co-integrate SiGe and Si channels for finFET devicesST MICROELECTRONICS INC·Filed 2015·Granted Dec 19, 2017·3 cites·31 claims
- 1986US9502292B2Dual shallow trench isolation liner for preventing electrical shortsIBM·Filed 2015·Granted Nov 22, 2016·3 cites·18 claims
- 2084US12278234B2Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methodsBELL SEMICONDUCTOR LLC·Filed 2023·Granted Apr 15, 2025·0 cites·21 claims
- 2184US9000555B2Electronic device including shallow trench isolation (STI) regions with bottom nitride liner and upper oxide liner and related methodsLIU QING·Filed 2012·Granted Apr 7, 2015·7 cites·23 claims
- 2282US9252052B2Dual shallow trench isolation liner for preventing electrical shortsIBM·Filed 2013·Granted Feb 2, 2016·3 cites·18 claims
- 2382US9082788B2Method of making a semiconductor device including an all around gateST MICROELECTRONICS INC·Filed 2013·Granted Jul 14, 2015·6 cites·21 claims
- 2481US8187975B1Hydrochloric acid etch and low temperature epitaxy in a single chamber for raised source-drain fabricationKHARE PRASANNA·Filed 2010·Granted May 29, 2012·6 cites·17 claims
- 2581US2023260846A1METHOD TO CO-INTEGRATE SiGe AND Si CHANNELS FOR FINFET DEVICESBELL SEMICONDUCTOR LLC·Filed 2023·Application pending·0 cites
- 2680US12408368B2Method of making a semiconductor device using a dummy gateBELL SEMICONDUCTOR LLC·Filed 2022·Granted Sep 2, 2025·0 cites·15 claims
- 2780US10170475B2Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon regionIBM·Filed 2017·Granted Jan 1, 2019·2 cites·14 claims
- 2878US11610886B2Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methodsBELL SEMICONDUCTOR LLC·Filed 2021·Granted Mar 21, 2023·0 cites·20 claims
- 2975US9991351B2Method of making a semiconductor device using a dummy gateST MICROELECTRONICS INC·Filed 2016·Granted Jun 5, 2018·1 cites·9 claims
- 3075US9000491B2Layer formation with reduced channel lossST MICROELECTRONICS INC·Filed 2014·Granted Apr 7, 2015·3 cites·26 claims
- 3174US11069682B2Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methodsST MICROELECTRONICS INC·Filed 2020·Granted Jul 20, 2021·0 cites·20 claims
- 3274US9099570B2Method for the formation of dielectric isolated fin structures for use, for example, in FinFET devicesST MICROELECTRONICS INC·Filed 2013·Granted Aug 4, 2015·3 cites·20 claims
- 3373US9905662B2Method of making a semiconductor device using a dummy gateST MICROELECTRONICS INC·Filed 2015·Granted Feb 27, 2018·1 cites·20 claims
- 3473US9620506B2Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon regionST MICROELECTRONICS INC·Filed 2013·Granted Apr 11, 2017·2 cites·15 claims
- 3567US9006816B2Memory device having multiple dielectric gate stacks and related methodsST MICROELECTRONICS INC·Filed 2013·Granted Apr 14, 2015·2 cites·14 claims
- 3667US8987082B2Method of making a semiconductor device using sacrificial finsST MICROELECTRONICS INC·Filed 2013·Granted Mar 24, 2015·2 cites·23 claims
- 3766US11670554B2Method to co-integrate SiGe and Si channels for finFET devicesBELL SEMICONDUCTOR LLC·Filed 2019·Granted Jun 6, 2023·0 cites·18 claims
- 3866US10580771B2Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methodsST MICROELECTRONICS INC·Filed 2018·Granted Mar 3, 2020·0 cites·20 claims
- 3966US10134899B2Facet-free strained silicon transistorST MICROELECTRONICS INC·Filed 2015·Granted Nov 20, 2018·1 cites·20 claims
- 4063US9793378B2Fin field effect transistor device with reduced overlap capacitance and enhanced mechanical stabilityST MICROELECTRONICS INC·Filed 2013·Granted Oct 17, 2017·1 cites·21 claims
- 4161US2018261674A1Method of making a semiconductor device using a dummy gateST MICROELECTRONICS INC·Filed 2018·Application pending·0 cites
- 4260US9893147B2Fully substrate-isolated FinFET transistorST MICROELECTRONICS INC·Filed 2016·Granted Feb 13, 2018·0 cites·24 claims
- 4360US9419111B2Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methodsST MICROELECTRONICS INC·Filed 2015·Granted Aug 16, 2016·0 cites·23 claims
- 4457US9123809B2Transistor having a stressed bodyST MICROELECTRONICS INC·Filed 2014·Granted Sep 1, 2015·0 cites·21 claims
- 4555US2014353716A1Method of making a semiconductor device using a dummy gateST MICROELECTRONICS INC·Filed 2013·Application pending·0 cites
- 4653US10038075B2Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon-germanium regionIBM·Filed 2017·Granted Jul 31, 2018·0 cites·17 claims
- 4753US9673222B2Fin isolation structures facilitating different fin isolation schemesGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 6, 2017·0 cites·19 claims
- 4852US2014353767A1Method for the formation of fin structures for finfet devicesST MICROELECTRONICS INC·Filed 2013·Application pending·0 cites
- 4950US10134895B2Facet-free strained silicon transistorST MICROELECTRONICS INC·Filed 2012·Granted Nov 20, 2018·0 cites·19 claims
- 5049US8237229B2Method and apparatus for buried-channel semiconductor deviceKHARE PRASANNA·Filed 2008·Granted Aug 7, 2012·0 cites·19 claims
Showing the top 50 of 56 patent records by PatentIndex Score.
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