Inventor · disambiguated record
Ville Antero Saanila
Also filed as: SAANILA VILLE · SAANILA VILLE A · SAANILA VILLE ANTERO
18 granted patents·1 pending application·4,442 citations·filing 2000–2006
97Inventor score
Files withASM INT11ASM MICROCHEMISTRY OY3IMEC INTER UNI MICRO ELECTR2ASM INTERNAT NV1INTERUNIVERSITAIR NIZROELECMIC1
Top patents by PatentIndex Score
19 records- 0199US7144809B2Production of elemental films using a boron-containing reducing agentASM INT·Filed 2004·Granted Dec 5, 2006·450 cites·33 claims
- 0299US6821889B2Production of elemental thin films using a boron-containing reducing agentASM INT·Filed 2002·Granted Nov 23, 2004·349 cites·54 claims
- 0399US6482262B1Deposition of transition metal carbidesASM MICROCHEMISTRY OY·Filed 2000·Granted Nov 19, 2002·328 cites·29 claims
- 0499US6475276B1Production of elemental thin films using a boron-containing reducing agentASM MICROCHEMISTRY OY·Filed 2000·Granted Nov 5, 2002·864 cites·40 claims
- 0598US6820570B2Atomic layer deposition reactorASM INT·Filed 2002·Granted Nov 23, 2004·647 cites·13 claims
- 0698US6727169B1Method of making conformal lining layers for damascene metallizationASM INT·Filed 2000·Granted Apr 27, 2004·225 cites·42 claims
- 0798US6599572B2Process for growing metalloid thin films utilizing boron-containing reducing agentsASM MICROCHEMISTRY OY·Filed 2001·Granted Jul 29, 2003·233 cites·10 claims
- 0898US6391785B1Method for bottomless deposition of barrier layers in integrated circuit metallization schemesIMEC INTER UNI MICRO ELECTR·Filed 2000·Granted May 21, 2002·584 cites·32 claims
- 0997US6902763B1Method for depositing nanolaminate thin films on sensitive surfacesASM INT·Filed 2000·Granted Jun 7, 2005·191 cites·21 claims
- 1097US6800552B2Deposition of transition metal carbidesASM INT·Filed 2002·Granted Oct 5, 2004·91 cites·35 claims
- 1197US6664192B2Method for bottomless deposition of barrier layers in integrated circuit metallization schemesIMEC INTER UNI MICRO ELECTR·Filed 2002·Granted Dec 16, 2003·77 cites·32 claims
- 1296US7749871B2Method for depositing nanolaminate thin films on sensitive surfacesASM INT·Filed 2005·Granted Jul 6, 2010·34 cites·4 claims
- 1396US7485340B2Production of elemental films using a boron-containing reducing agentASM INT·Filed 2006·Granted Feb 3, 2009·26 cites·23 claims
- 1495US6863727B1Method of depositing transition metal nitride thin filmsASM INT·Filed 2000·Granted Mar 8, 2005·87 cites·32 claims
- 1595US6852635B2Method for bottomless deposition of barrier layers in integrated circuit metallization schemesINTERUNIVERSITAIR NIZROELECMIC·Filed 2003·Granted Feb 8, 2005·137 cites·25 claims
- 1694US6794287B2Process for growing metal or metal carbide thin films utilizing boron-containing reducing agentsASM INTERNAT NV·Filed 2003·Granted Sep 21, 2004·81 cites·15 claims
- 1788US7329590B2Method for depositing nanolaminate thin films on sensitive surfacesASM INT·Filed 2004·Granted Feb 12, 2008·35 cites·19 claims
- 1874US7670944B2Conformal lining layers for damascene metallizationASM INT·Filed 2006·Granted Mar 2, 2010·3 cites·16 claims
- 1950US2005092249A1Atomic layer deposition reactorFiled 2004·Application pending·0 cites
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