Atomic layer deposition reactor

Abstract

Various reactors for growing thin films on a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants are disclosed. In one embodiment, the reactor comprises a reaction chamber. A showerhead plate divides the reaction chamber into upper and lower parts. A first precursor is directed towards the lower half of the reaction chamber and a second precursor is directed towards the upper half of the reaction chamber. The substrate is disposed within the lower half of the reaction chamber. The showerhead plate includes plurality passages such that the upper half is in communication with the lower half of the reaction chamber. In another arrangement, the upper half of the reaction chamber defines a plasma cavity in which in-situ radicals are formed. In yet another arrangement, the reaction chamber includes a shutter plate, which is configured to selectively open and close the passages in the showerhead plate. In other arrangements, the showerhead plate is arranged to modify the local flow patterns of the gases flowing through the reaction chamber.

1 . A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants, comprising: 
 a reaction chamber that defines a reaction space;    a showerhead plate disposed within the reaction space and dividing the reaction space into a first part in which the substrate is positioned and a second part;    a first precursor source that is in communication with the first part of the reaction space such that first precursor from the first precursor source communicates directly with the substrate without flowing through the showerhead plate;    a second precursor source that is in communication with the second part of the reaction space such that second precursor from the second precursor source communicates with the substrate by flowing through the showerhead plate; and    the showerhead plate being configured to adjust in a horizontal direction the surface reactions on the substrate.    
   
   
       2 . The reactor of  claim 1 , wherein the showerhead plate includes a first plate that defines, at least in part, a plurality passages that extend from the second part to the first part of the reaction chamber.  
   
   
       3 . The reactor of  claim 2 , wherein the first plate has a variable thickness  
   
   
       4 . The reactor of  claim 2 , comprising a shutter plate configured to selectively open and close the plurality passages of the first plate.  
   
   
       5 . The reactor of  claim 4 , wherein the shutter plate includes a plurality passages that are geometrically offset form the plurality passages of the first plate.  
   
   
       6 . The reactor of  claim 4 , wherein the showerhead plate has a variable thickness.  
   
   
       7 . The reactor of  claim 1 , wherein the showerhead plate is a single integrally formed plate.  
   
   
       8 . The reactor of  claim 1 , wherein the showerhead plate is configured to modify the flow conditions at a reaction surface of the substrate.  
   
   
       9 . The reactor of  claim 1 , wherein the reactor include a plasma generating source and the second part of the reactor forms a plasma cavity for generating in-situ radicals.  
   
   
       10 . The reactor of  claim 9 , wherein the plasma generating source is configured to create an inductively coupled plasma.  
   
   
       11 . The reactor of  claim 9 , wherein the plasma generating source is configured to create a capacitively coupled plasma.  
   
   
       12 . The reactor of  claim 11 , wherein the plasma generating source includes first electrode and a second electrode.  
   
   
       13 . The reactor of  claim 12 , wherein the first electrode is positioned outside the reaction chamber and the showerhead is the second electrode.  
   
   
       14 . The reactor of  claim 12 , wherein the first electrode is positioned inside the reaction chamber and the showerhead is the second electrode.  
   
   
       15 - 23 . (canceled)