Inventor · disambiguated record
Vikas K. Kaushal
Also filed as: KAUSHAL VIKAS K · KAUSHAL VIKAS KUMAR
13 granted patents·1 pending application·101 citations·filing 2013–2015
91Inventor score
Top patents by PatentIndex Score
14 records- 0196US9368608B1Heterojunction bipolar transistor with improved performance and breakdown voltageGLOBALFOUNDARIES INC·Filed 2015·Granted Jun 14, 2016·26 cites·20 claims
- 0295US9245951B1Profile control over a collector of a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 26, 2016·20 cites·20 claims
- 0392US9159817B2Heterojunction bipolar transistors with an airgap between the extrinsic base and collectorIBM·Filed 2013·Granted Oct 13, 2015·14 cites·20 claims
- 0488US9029229B2Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regionsIBM·Filed 2013·Granted May 12, 2015·10 cites·13 claims
- 0587US9070734B2Heterojunction bipolar transistors with reduced parasitic capacitanceIBM·Filed 2014·Granted Jun 30, 2015·7 cites·11 claims
- 0684US8810005B1Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up regionIBM·Filed 2013·Granted Aug 19, 2014·7 cites·12 claims
- 0782US9653566B2Bipolar junction transistors with an air gap in the shallow trench isolationGLOBALFOUNDRIES INC·Filed 2015·Granted May 16, 2017·3 cites·19 claims
- 0879US9583569B2Profile control over a collector of a bipolar junction transistorGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 28, 2017·2 cites·20 claims
- 0979US8946861B2Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up regionIBM·Filed 2013·Granted Feb 3, 2015·5 cites·12 claims
- 1076US9231074B2Bipolar junction transistors with an air gap in the shallow trench isolationGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 5, 2016·3 cites·11 claims
- 1169US8957456B1Heterojunction bipolar transistors with reduced parasitic capacitanceIBM·Filed 2013·Granted Feb 17, 2015·2 cites·10 claims
- 1268US9356097B2Method of forming a bipolar transistor with maskless self-aligned emitterIBM·Filed 2013·Granted May 31, 2016·2 cites·18 claims
- 1353US9219128B2Methods of fabricating bipolar junction transistors with reduced epitaxial base facets effect for low parasitic collector-base capacitanceGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 22, 2015·0 cites·16 claims
- 1446US2016049503A1Bipolar junction transistors with reduced epitaxial base facets effect for low parasitic collector-base capacitanceGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →