Inventor · disambiguated record
Shuang Meng
Also filed as: MENG SHUANG
44 granted patents·13 pending applications·1,870 citations·filing 2002–2024
98Inventor score
Files withMICRON TECHNOLOGY INC25ENTEGRIS INC6ROUND ROCK RES LLC6MATTSON TECH INC5ADVANCED MICRO FABRICATION EQUIPMENT INC SHANGHAI3
Top patents by PatentIndex Score
57 records- 0199US7838084B2Atomic layer deposition method of depositing an oxide on a substrateMICRON TECHNOLOGY INC·Filed 2006·Granted Nov 23, 2010·528 cites·29 claims
- 0299US7431966B2Atomic layer deposition method of depositing an oxide on a substrateMICRON TECHNOLOGY INC·Filed 2003·Granted Oct 7, 2008·538 cites·11 claims
- 0398US7390746B2Multiple deposition for integration of spacers in pitch multiplication processMICRON TECHNOLOGY INC·Filed 2005·Granted Jun 24, 2008·67 cites·55 claims
- 0498US7253118B2Pitch reduced patterns relative to photolithography featuresMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 7, 2007·161 cites·52 claims
- 0597US7651951B2Pitch reduced patterns relative to photolithography featuresMICRON TECHNOLOGY INC·Filed 2007·Granted Jan 26, 2010·46 cites·28 claims
- 0697US6967154B2Enhanced atomic layer depositionMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 22, 2005·106 cites·59 claims
- 0796US6844260B2Insitu post atomic layer deposition destruction of active speciesMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 18, 2005·104 cites·21 claims
- 0895US9761457B2Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including sameMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 12, 2017·7 cites·8 claims
- 0995US8852851B2Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including sameZHOU BAOSUO·Filed 2006·Granted Oct 7, 2014·23 cites·10 claims
- 1095US7718540B2Pitch reduced patterns relative to photolithography featuresROUND ROCK RES LLC·Filed 2007·Granted May 18, 2010·22 cites·5 claims
- 1195US7279732B2Enhanced atomic layer depositionMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 9, 2007·58 cites·43 claims
- 1294US10096483B2Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including sameMICRON TECHNOLOGY INC·Filed 2017·Granted Oct 9, 2018·6 cites·8 claims
- 1394US8048812B2Pitch reduced patterns relative to photolithography featuresROUND ROCK RES LLC·Filed 2010·Granted Nov 1, 2011·11 cites·20 claims
- 1494US7884022B2Multiple deposition for integration of spacers in pitch multiplication processROUND ROCK RES LLC·Filed 2007·Granted Feb 8, 2011·20 cites·21 claims
- 1593US8207576B2Pitch reduced patterns relative to photolithography featuresTRAN LUAN·Filed 2007·Granted Jun 26, 2012·18 cites·25 claims
- 1693US7071098B2Methods of fabricating interconnects for semiconductor components including a through hole entirely through the component and forming a metal nitride including separate precursor cyclesMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 4, 2006·20 cites·19 claims
- 1792US10607844B2Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including sameMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 31, 2020·4 cites·4 claims
- 1892US8598632B2Integrated circuit having pitch reduced patterns relative to photoithography featuresTRAN LUAN·Filed 2012·Granted Dec 3, 2013·10 cites·6 claims
- 1990US12463044B2Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including sameLODESTAR LICENSING GROUP LLC·Filed 2024·Granted Nov 4, 2025·0 cites·12 claims
- 2089US11289323B2Processing of semiconductors using vaporized solventsMATTSON TECH INC·Filed 2018·Granted Mar 29, 2022·4 cites·8 claims
- 2188US8119535B2Pitch reduced patterns relative to photolithography featuresTRAN LUAN·Filed 2009·Granted Feb 21, 2012·8 cites·19 claims
- 2288US7410898B2Methods of fabricating interconnects for semiconductor componentsMICRON TECHNOLOGY INC·Filed 2007·Granted Aug 12, 2008·12 cites·13 claims
- 2387US7723767B2High dielectric constant transition metal oxide materialsMICRON TECHNOLOGY INC·Filed 2006·Granted May 25, 2010·8 cites·23 claims
- 2483US9305782B2Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including sameMICRON TECHNOLOGY INC·Filed 2014·Granted Apr 5, 2016·3 cites·10 claims
- 2582US11935756B2Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including sameLODESTAR LICENSING GROUP LLC·Filed 2022·Granted Mar 19, 2024·0 cites·8 claims
- 2681US6943106B1Methods of fabricating interconnects for semiconductor components including plating solder-wetting material and solder fillingMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 13, 2005·22 cites·22 claims
- 2780US8129289B2Method to deposit conformal low temperature SiO2SMYTHE JOHN A·Filed 2006·Granted Mar 6, 2012·10 cites·22 claims
- 2880US7872291B2Enhanced atomic layer depositionROUND ROCK RES LLC·Filed 2007·Granted Jan 18, 2011·4 cites·39 claims
- 2980US7119034B2Atomic layer deposition method of forming an oxide comprising layer on a substrateMICRON TECHNOLOGY INC·Filed 2005·Granted Oct 10, 2006·5 cites·28 claims
- 3079US7189642B2Methods of fabricating interconnects including depositing a first material in the interconnect with a thickness of angstroms and a low temperature for semiconductor componentsMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 13, 2007·6 cites·33 claims
- 3177US8362576B2Transistor with reduced depletion field widthROUND ROCK RES LLC·Filed 2011·Granted Jan 29, 2013·2 cites·15 claims
- 3276US11560625B2Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursorENTEGRIS INC·Filed 2019·Granted Jan 24, 2023·0 cites·17 claims
- 3376US11039527B2Air leak detection in plasma processing apparatus with separation gridMATTSON TECH INC·Filed 2019·Granted Jun 15, 2021·1 cites·17 claims
- 3475US8123968B2Multiple deposition for integration of spacers in pitch multiplication processBAI JINGYI·Filed 2008·Granted Feb 28, 2012·6 cites·25 claims
- 3575US7172947B2High dielectric constant transition metal oxide materialsMICRON TECHNOLOGY INC·Filed 2004·Granted Feb 6, 2007·11 cites·30 claims
- 3674US11335563B2Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including sameMICRON TECHNOLOGY INC·Filed 2020·Granted May 17, 2022·0 cites·7 claims
- 3774US7329615B2Atomic layer deposition method of forming an oxide comprising layer on a substrateMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 12, 2008·3 cites·16 claims
- 3872US8791519B2High dielectric constant transition metal oxide materialsLI JIUTAO·Filed 2010·Granted Jul 29, 2014·2 cites·17 claims
- 3972US2023128330A1Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursorENTEGRIS INC·Filed 2022·Application pending·0 cites
- 4070US10453744B2Low temperature molybdenum film deposition utilizing boron nucleation layersENTEGRIS INC·Filed 2018·Granted Oct 22, 2019·1 cites·20 claims
- 4168US2021307151A1Air Leak Detection In Plasma Processing Apparatus With Separation GridMATTSON TECH INC·Filed 2021·Application pending·0 cites
- 4267US7282239B2Systems and methods for depositing material onto microfeature workpieces in reaction chambersMICRON TECHNOLOGY INC·Filed 2003·Granted Oct 16, 2007·6 cites·6 claims
- 4366US2022223405A1Processing of Semiconductors Using Vaporized SolventsBEIJING E TOWN SEMICONDUCTOR TECH CO LTD·Filed 2022·Application pending·0 cites
- 4463US2008029028A1Systems and methods for depositing material onto microfeature workpieces in reaction chambersMICRON TECHNOLOGY INC·Filed 2007·Application pending·0 cites
- 4560US7067438B2Atomic layer deposition method of forming an oxide comprising layer on a substrateMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 27, 2006·5 cites·29 claims
- 4659US2015001673A1High dielectric constant transition metal oxide materialsMICRON TECHNOLOGY INC·Filed 2014·Application pending·0 cites
- 4757US11107675B2CVD Mo deposition by using MoOCl4ENTEGRIS INC·Filed 2018·Granted Aug 31, 2021·0 cites·17 claims
- 4855US8816447B2Transistor with reduced depletion field widthROUND ROCK RESARCH LLC·Filed 2013·Granted Aug 26, 2014·0 cites·7 claims
- 4955US2014083452A1Method for in situ cleaning of mocvd reaction chamberADVANCED MICRO FABRICATION EQUIPMENT INC SHANGHAI·Filed 2013·Application pending·0 cites
- 5049US2011117743A1Multiple deposition for integration of spacers in pitch multiplication processROUND ROCK RES LLC·Filed 2011·Application pending·0 cites
Showing the top 50 of 57 patent records by PatentIndex Score.
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