US2015001673A1PendingUtilityA1

High dielectric constant transition metal oxide materials

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Assignee: MICRON TECHNOLOGY INCPriority: Aug 31, 2004Filed: Jul 7, 2014Published: Jan 1, 2015
Est. expiryAug 31, 2024(expired)· nominal 20-yr term from priority
Inventors:Jiutao LiShuang Meng
H10P 14/69397H10P 14/69395H10P 14/6339H10P 30/40H10P 14/6526H10P 14/69392C04B 35/48H10D 1/68H01L 28/40
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Claims

Abstract

A transition metal oxide dielectric material is doped with a non-metal in order to enhance the electrical properties of the metal oxide. In a preferred embodiment, a transition metal oxide is deposited over a bottom electrode and implanted with a dopant. In a preferred embodiment, the metal oxide is hafnium oxide or zirconium oxide and the dopant is nitrogen. The dopant can convert the crystal structure of the hafnium oxide or zirconium oxide to a tetragonal structure and increase the dielectric constant of the metal oxide.

Claims

exact text as granted — not AI-modified
1 .- 59 . (canceled) 
     
     
         60 . A dielectric material for an integrated circuit consisting essentially of a transition metal oxide layer with a non-metal dopant in a tetragonal crystal structure, wherein the dielectric material has a dielectric constant at least 30% higher than the transition metal oxide without the non-metal dopant, wherein the metal in the transition metal oxide consists essentially of hafnium or zirconium. 
     
     
         61 . The dielectric material of  claim 60 , wherein the dielectric material comprises between about 1 atomic % and 20 atomic % of the non-metal dopant. 
     
     
         62 . The dielectric material of  claim 60 , wherein the dielectric material comprises between about 3 atomic % and 10 atomic % of the non-metal dopant. 
     
     
         63 . The dielectric material of  claim 60 , wherein the transition metal oxide is hafnium oxide. 
     
     
         64 . The dielectric material of  claim 60 , wherein the transition metal oxide is zirconium oxide. 
     
     
         65 . The dielectric material of  claim 60 , wherein the dielectric constant is at least 40% higher than the transition metal oxide without the non-metal dopant. 
     
     
         66 . The dielectric material of  claim 60 , wherein the dielectric constant is greater than 32. 
     
     
         67 . The dielectric material of  claim 65 , wherein the dielectric constant is greater than 37. 
     
     
         68 . The dielectric material of  claim 60 , wherein the dielectric material has a thickness of between about 30 Å and 200 Å 
     
     
         69 . A capacitor for an integrated circuit comprising:
 a bottom electrode over a substrate;   a dielectric layer overlying the bottom electrode, the dielectric layer consisting essentially of a transition metal oxide layer with a non-metal dopant in a tetragonal crystal structure, wherein the dielectric material has a dielectric constant at least 30% higher than the transition metal oxide without the non-metal dopant, wherein the metal in the transition metal oxide consists essentially of hafnium or zirconium; and   an upper electrode extending over the dielectric layer.   
     
     
         70 . The capacitor of  claim 69 , wherein the non-metal dopant comprises nitrogen. 
     
     
         71 . The capacitor of  claim 69 , wherein the dielectric material comprises between about 1 atomic % and 20 atomic % of the non-metal dopant. 
     
     
         72 . The capacitor of  claim 69 , wherein the transition metal oxide is hafnium oxide. 
     
     
         73 . The capacitor of  claim 69 , wherein the transition metal oxide is zirconium oxide. 
     
     
         74 . An integrated circuit comprising:
 a plurality of conductive bottom electrodes;   a dielectric layer extending over each bottom electrode, the dielectric layer consisting essentially of a transition metal oxide layer with a non-metal dopant in a tetragonal crystal structure, wherein the dielectric material has a dielectric constant greater than 25, wherein the metal in the transition metal oxide consists essentially of hafnium or zirconium; and   an upper electrode extending over the dielectric layer.   
     
     
         75 . The integrated circuit of  claim 74 , wherein the non-metal dopant comprises nitrogen. 
     
     
         76 . The integrated circuit of  claim 74 , wherein the dielectric material comprises between about 1 atomic % and 20 atomic % non-metal dopant. 
     
     
         77 . The integrated circuit of  claim 74 , wherein the transition metal oxide is hafnium oxide. 
     
     
         78 . The integrated circuit of  claim 74 , wherein the transition metal oxide is zirconium oxide. 
     
     
         79 . The integrated circuit of  claim 74 , wherein the dielectric constant is greater than 32.

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