Inventor · disambiguated record
Vladimir Zubkov
Also filed as: ZUBKOV VLADIMIR · ZUBKOV VLADIMIR A · ZUBKOV VLADIMIR ALEKSANDROVICH
33 granted patents·4 pending applications·979 citations·filing 1988–2012
97Inventor score
Top patents by PatentIndex Score
37 records- 0198US8129290B2Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cureBALSEANU MIHAELA·Filed 2006·Granted Mar 6, 2012·492 cites·16 claims
- 0294US6989565B1Memory device having an electron trapping layer in a high-K dielectric gate stackLSI LOGIC CORP·Filed 2003·Granted Jan 24, 2006·84 cites·5 claims
- 0394US6566262B1Method for creating self-aligned alloy capping layers for copper interconnect structuresLSI LOGIC CORP·Filed 2001·Granted May 20, 2003·83 cites·23 claims
- 0492US6303047B1Low dielectric constant multiple carbon-containing silicon oxide dielectric material for use in integrated circuit structures, and method of making sameLSI LOGIC CORP·Filed 1999·Granted Oct 16, 2001·81 cites·32 claims
- 0587US8778816B2In situ vapor phase surface activation of SiO2SATO TATSUYA E·Filed 2011·Granted Jul 15, 2014·9 cites·19 claims
- 0685US6511925B1Process for forming high dielectric constant gate dielectric for integrated circuit structureLSI LOGIC CORP·Filed 2001·Granted Jan 28, 2003·32 cites·27 claims
- 0785US6365528B1Low temperature process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric-material characterized by improved resistance to oxidation and good gap-filling capabilitiesLSI LOGIC CORP·Filed 2000·Granted Apr 2, 2002·35 cites·20 claims
- 0884US8753989B2Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cureBALSEANU MIHAELA·Filed 2012·Granted Jun 17, 2014·5 cites·14 claims
- 0983US7790635B2Method to increase the compressive stress of PECVD dielectric filmsAPPLIED MATERIALS INC·Filed 2006·Granted Sep 7, 2010·8 cites·24 claims
- 1083US7732342B2Method to increase the compressive stress of PECVD silicon nitride filmsAPPLIED MATERIALS INC·Filed 2006·Granted Jun 8, 2010·10 cites·13 claims
- 1181US7816205B2Method of forming non-volatile memory having charge trap layer with compositional gradientAPPLIED MATERIALS INC·Filed 2008·Granted Oct 19, 2010·5 cites·21 claims
- 1281US7718548B2Selective copper-silicon-nitride layer formation for an improved dielectric film/copper line interfaceAPPLIED MATERIALS INC·Filed 2007·Granted May 18, 2010·11 cites·16 claims
- 1380US6572925B2Process for forming a low dielectric constant fluorine and carbon containing silicon oxide dielectric materialLSI LOGIC CORP·Filed 2001·Granted Jun 3, 2003·20 cites·21 claims
- 1477US6998343B1Method for creating barrier layers for copper diffusionLSI LOGIC CORP·Filed 2003·Granted Feb 14, 2006·26 cites·17 claims
- 1577US6858195B2Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric materialLSI LOGIC CORP·Filed 2001·Granted Feb 22, 2005·19 cites·34 claims
- 1671US8252653B2Method of forming a non-volatile memory having a silicon nitride charge trap layerBALSEANU MIHAELA·Filed 2008·Granted Aug 28, 2012·2 cites·23 claims
- 1764US6673498B1Method for reticle formation utilizing metal vaporizationLSI LOGIC CORP·Filed 2001·Granted Jan 6, 2004·7 cites·19 claims
- 1863US6627556B1Method of chemically altering a silicon surface and associated electrical devicesLSI LOGIC CORP·Filed 2002·Granted Sep 30, 2003·7 cites·14 claims
- 1959US7508501B2Method for measuring spectroscopic properties of bulk products and device for carrying out said methodZUBKOV VLADIMIR ALEKSANDROVICH·Filed 2004·Granted Mar 24, 2009·10 cites·17 claims
- 2058US8501568B2Method of forming flash memory with ultraviolet treatmentBALSEANU MIHAELA·Filed 2008·Granted Aug 6, 2013·0 cites·20 claims
- 2156US7132336B1Method and apparatus for forming a memory structure having an electron affinity regionLSI LOGIC CORP·Filed 2002·Granted Nov 7, 2006·7 cites·15 claims
- 2256US6649219B2Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidationLSI LOGIC CORP·Filed 2001·Granted Nov 18, 2003·4 cites·35 claims
- 2353US7015168B2Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidationLSI LOGIC CORP·Filed 2003·Granted Mar 21, 2006·3 cites·12 claims
- 2451US6822308B2Method of chemically altering a silicon surface and associated electrical devicesLSI LOGIC CORP·Filed 2003·Granted Nov 23, 2004·2 cites·6 claims
- 2551US6743474B1Method for growing thin filmsLSI LOGIC CORP·Filed 2001·Granted Jun 1, 2004·2 cites·12 claims
- 2648US7829455B2Method for creating barriers for copper diffusionLSI CORP·Filed 2005·Granted Nov 9, 2010·0 cites·11 claims
- 2747US6747358B1Self-aligned alloy capping layers for copper interconnect structuresLSI LOGIC CORP·Filed 2003·Granted Jun 8, 2004·2 cites·12 claims
- 2845US7115991B1Method for creating barriers for copper diffusionLSI LOGIC CORP·Filed 2001·Granted Oct 3, 2006·1 cites·11 claims
- 2944US7081296B2Method for growing thin filmsLSI LOGIC CORP·Filed 2004·Granted Jul 25, 2006·0 cites·5 claims
- 3044US6919263B2High-K dielectric gate material uniquely formedLSI LOGIC CORP·Filed 2003·Granted Jul 19, 2005·1 cites·8 claims
- 3144US2005258475A1Memory device having an electron trapping layer in a high-K dielectric gate stackLSI LOGIC CORP·Filed 2005·Application pending·0 cites
- 3242US8343881B2Silicon dioxide layer deposited with BDEASAPPLIED MATERIALS INC·Filed 2010·Granted Jan 1, 2013·0 cites·20 claims
- 3342US2003207750A1Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidationFiled 2003·Application pending·0 cites
- 3439US7015096B1Bimetallic oxide compositions for gate dielectricsLSI LOGIC CORP·Filed 2004·Granted Mar 21, 2006·0 cites·38 claims
- 3536US5046902ASpiral drillZUBOV ALEXEI V·Filed 1988·Granted Sep 10, 1991·11 cites·6 claims
- 3634US2004121550A1Method for creating barriers to metal contamination in silicon oxidesFiled 2002·Application pending·0 cites
- 3729US2008034025A1Method for Development of Independent Multivariate Calibration ModelsZUBKOV VLADIMIR A·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →