Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation

Abstract

A process is provided for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes including one or more organofluoro silanes characterized by the absence of aliphatic C—H bonds. In one embodiment, the process is carried out using a mild oxidizing agent. Also provided is a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material for use in an integrated circuit structure containing silicon atoms bonded to oxygen atoms, silicon atoms bonded to carbon atoms, and carbon atoms bonded to fluorine atoms, where the dielectric material is characterized by the absence of aliphatic C—H bonds and where the dielectric material has a ratio of carbon atoms to silicon atoms of C:Si greater than about 1:3.

Having thus described the invention, what is claimed is:  
     
         1 . A process for forming a low k fluorine and carbon-containing silicon oxide dielectric material comprising reacting with an oxidizing agent one or more silanes including one or more organofluoro silanes characterized by the absence of aliphatic C—H bonds.  
     
     
         2 . The process of  claim 1  wherein said oxidizing agent is a mild oxidizing agent.  
     
     
         3 . The process of  claim 2  wherein said mild oxidizing agent is hydrogen peroxide (H 2 O 2 ).  
     
     
         4 . The oxidizing agent of  claim 1  wherein said oxidizing agent is more reactive than hydrogen peroxide.  
     
     
         5 . The process of  claim 1  wherein said oxidizing agent is selected from the group consisting of ozone (O 3 ), oxygen (O 2 ), oxides of nitrogen (N 2 O, NO, NO 2 ), and mixtures thereof.  
     
     
         6 . The process of  claim 1 , wherein said one or more organofluoro silanes has the formula: (H) y Si(C x F 2x+1 ) 4−y , where y=1 to 3 and x=1 to 5.  
     
     
         7 . The process of  claim 6  wherein said one or more organofluoro silanes has the formula: (H) 3 Si(CF m )(CF 3 ) n  where m=0 to 3, and n=3−m.  
     
     
         8 . The process of  claim 1  herein said one or more organofluoro silanes has the formula: R 1 ((R 2 )Si(L)) n Si(R 3 ) where R 1 ═(H) or (C x F 2x+1 ), R 2 ═(H) 2  or (C x F 2x+1 )(H), R 3 ═(H) 3  or (C x F 2x+1 )(H) 2 , L=—(O)— or —(C(R 4 ) 2 ) m —, n=0 to 5, x=1 to 5, m=1 to 4, and each R 4  is independently F or (C x F 2x+1 ).  
     
     
         9 . The process of  claim 8  wherein n is at least 1.  
     
     
         10 . The process of  claim 9  wherein said one or more organofluoro silanes has the formula: (R 4 )Si(CF 2 )Si(R 5 ) where R 4 ═(H) 3  or (CF 3 )(H) 2  and R 5 ═(H) 3  or (CF 3 ) (H) 2 .  
     
     
         11 . The process of  claim 1  wherein said one or more organofluoro silanes has the formula: ((C x F 2x+1 ) p Si(H) 2−p (L)) q  where L=—(O)— or —(C(R) 2 ) r —; each R is independently F or (C x F 2x+1 ), p=1 to 2, q=3 to 6, r=1 to 4, and x=1 to 5.  
     
     
         12 . The process of  claim 1  wherein said one or more organofluoro silanes are characterized by the presence of Si—H bonds.  
     
     
         13 . The process of  claim 1  wherein said one or more silanes further include SiH 4 .  
     
     
         14 . The process of  claim 1  wherein said one or more organofluoro silanes include CF 3 SiH 3 .  
     
     
         15 . The process of  claim 1  wherein said reacting is carried out at low temperature.  
     
     
         16 . A process for forming a low k fluorine and carbon-containing silicon oxide dielectric material comprising reacting with a mild oxidizing agent one or more silanes including one or more organofluoro silanes characterized by the absence of aliphatic C—H bonds.  
     
     
         17 . The process of  claim 16  wherein said one or more silanes consist essentially of one or more organofluoro silanes.  
     
     
         18 . The process of  claim 16  wherein said mild oxidizing agent is hydrogen peroxide.  
     
     
         19 . The process of  claim 16  wherein said one or more organofluoro silanes include trifluorosilane (CF 3 SiH 3 ).  
     
     
         20 . The process of  claim 16  wherein said reacting is carried out at low temperature.  
     
     
         21 . A low dielectric constant fluorine and carbon-containing silicon oxide dielectric material for use in an integrated circuit structure comprising silicon atoms bonded to oxygen atoms, silicon atoms bonded to carbon atoms, and carbon atoms bonded to fluorine atoms, wherein said dielectric material is characterized by the absence of aliphatic C—H bonds and wherein said dielectric material has a ratio of carbon atoms to silicon atoms of C:Si greater than about 1:3.  
     
     
         22 . The dielectric material of  claim 21  further characterized by the presence of C—C bonds.  
     
     
         23 . The dielectric material of  claim 21  consisting essentially of silicon atoms, carbon atoms, fluorine atoms, and oxygen atoms.