Inventor · disambiguated record
Hyeoung-Won Seo
Also filed as: SEO HYEOUNG-WON
45 granted patents·9 pending applications·367 citations·filing 2004–2024
98Inventor score
Top patents by PatentIndex Score
54 records- 0197US7368352B2Semiconductor devices having transistors with vertical channels and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 6, 2008·61 cites·33 claims
- 0295US7586149B2Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 8, 2009·34 cites·20 claims
- 0392US8895400B2Methods of fabricating semiconductor devices having buried word line interconnectsSEO HYEOUNG-WON·Filed 2012·Granted Nov 25, 2014·16 cites·20 claims
- 0492US7781285B2Semiconductor device having vertical transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 24, 2010·22 cites·15 claims
- 0590US7728373B2DRAM device with cell epitaxial layers partially overlap buried cell gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 1, 2010·13 cites·13 claims
- 0690US7247541B2Method of manufacturing a semiconductor memory device including a transistorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 24, 2007·12 cites·7 claims
- 0789US11088144B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 10, 2021·4 cites·20 claims
- 0888US8022457B2Semiconductor memory device having vertical channel transistor and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 20, 2011·13 cites·15 claims
- 0988US7153733B2Method of fabricating fin field effect transistor using isotropic etching techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 26, 2006·14 cites·11 claims
- 1087US7387931B2Semiconductor memory device with vertical channel transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 17, 2008·12 cites·28 claims
- 1187US7279775B2Semiconductor die with protective layer and related method of processing a semiconductor waferSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 9, 2007·14 cites·36 claims
- 1286US7221023B2Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 22, 2007·11 cites·9 claims
- 1384US8174065B2Semiconductor device having vertical transistor and method of fabricating the sameKIM BONG-SOO·Filed 2010·Granted May 8, 2012·7 cites·17 claims
- 1484US7524733B2Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 28, 2009·9 cites·11 claims
- 1583US8053307B2Method of fabricating semiconductor device with cell epitaxial layers partially overlap buried cell gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Nov 8, 2011·5 cites·15 claims
- 1683US7279774B2Bulk substrates in FinFETs with trench insulation surrounding FIN pairs having FINs separated by recess hole shallower than trenchSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 9, 2007·26 cites·8 claims
- 1782US8039896B2Semiconductor memory device with vertical channel formed on semiconductor pillarsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 18, 2011·8 cites·23 claims
- 1881US9224619B2Semiconductor device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 29, 2015·8 cites·13 claims
- 1978US7491603B2Transistors of semiconductor device having channel region in a channel-portion hole and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 17, 2009·5 cites·16 claims
- 2078US7482222B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 27, 2009·4 cites·4 claims
- 2177US7759198B2Method of forming semiconductor devices having a vertical channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 20, 2010·8 cites·23 claims
- 2277US7619281B2Semiconductor device having buried gate line and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 17, 2009·8 cites·14 claims
- 2376US7781851B2Semiconductor device having reduced die-warpage and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 24, 2010·6 cites·43 claims
- 2476US2024114677A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2574US8283714B2Semiconductor memory device having vertical channel transistor and method for fabricating the sameSEO HYEOUNG-WON·Filed 2011·Granted Oct 9, 2012·3 cites·31 claims
- 2674US7867825B2Semiconductor die with protective layer and related method of processing a semiconductor waferSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 11, 2011·5 cites·17 claims
- 2773US8871614B2Semiconductor die with protective layer and related method of processing a semiconductor waferKIM SUN-JOON·Filed 2010·Granted Oct 28, 2014·4 cites·3 claims
- 2872US11871559B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 9, 2024·0 cites·20 claims
- 2971US7776692B2Semiconductor device having a vertical channel and method of manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 17, 2010·3 cites·17 claims
- 3071US7557410B2Dynamic random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 7, 2009·2 cites·8 claims
- 3171US2024357810A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3270US7749846B2Method of forming contact structure and method of fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 6, 2010·4 cites·25 claims
- 3367US7888720B2Semiconductor device including conductive lines with fine line width and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 15, 2011·3 cites·6 claims
- 3467US7534708B2Recessed-type field effect transistor with reduced body effectSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·2 cites·20 claims
- 3566US7393769B2Transistor of a semiconductor device having a punchthrough protection layer and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 1, 2008·3 cites·23 claims
- 3664US7429505B2Method of fabricating fin field effect transistor using isotropic etching techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 30, 2008·2 cites·12 claims
- 3761US8164119B2Semiconductor device including conductive lines with fine line width and method of fabricating the sameSEO HYEOUNG-WON·Filed 2011·Granted Apr 24, 2012·1 cites·2 claims
- 3860US12048150B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 3959US7378320B2Method of forming asymmetric MOS transistor with a channel stopping region and a trench-type gateSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 27, 2008·8 cites·11 claims
- 4059US7354827B2Transistor having asymmetric channel region, semiconductor device including the same, and method of fabricating semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 8, 2008·2 cites·7 claims
- 4156US7696570B2Transistors of semiconductor device having channel region in a channel-portion hole and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 13, 2010·0 cites·11 claims
- 4253US8310859B2Semiconductor memory device having balancing capacitorsSEO HYEOUNG-WON·Filed 2009·Granted Nov 13, 2012·2 cites·7 claims
- 4351US8482045B2Semiconductor memory device having vertical channel transistor and method for fabricating the sameSEO HYEOUNG-WON·Filed 2012·Granted Jul 9, 2013·0 cites·17 claims
- 4448US7952129B2Semiconductor devices having a vertical channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted May 31, 2011·0 cites·10 claims
- 4548US2008048333A1Semiconductor Device Having Buried Word Line Interconnects and Method of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4648US2007293011A1Field effect transistor device with channel fin structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4746US7300845B2Method of manufacturing recess type MOS transistor having a dual diode impurity layer structureSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 27, 2007·3 cites·39 claims
- 4846US2010285654A1Semiconductor device having reduced die-warpage and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 4946US2005173744A1Recessed-type field effect transistor with reduced body effectFiled 2005·Application pending·0 cites
- 5044US8873277B2Semiconductor memory device having balancing capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Oct 28, 2014·0 cites·9 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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