Inventor · disambiguated record
Falk Graetsch
Also filed as: GRAETSCH FALK
9 granted patents·4 pending applications·84 citations·filing 2002–2014
87Inventor score
Top patents by PatentIndex Score
13 records- 0191US8445344B2Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterningCARTER RICHARD·Filed 2010·Granted May 21, 2013·17 cites·21 claims
- 0282US8283232B2Enhanced etch stop capability during patterning of silicon nitride including layer stacks by providing a chemically formed oxide layer during semiconductor processingBEYER SVEN·Filed 2010·Granted Oct 9, 2012·7 cites·25 claims
- 0382US6723663B1Technique for forming an oxide/nitride layer stack by controlling the nitrogen ion concentration in a nitridation plasmaADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 20, 2004·26 cites·23 claims
- 0478US7897450B2Method for encapsulating a high-K gate stack by forming a liner at two different process temperaturesGLOBALFOUNDRIES INC·Filed 2009·Granted Mar 1, 2011·9 cites·8 claims
- 0571US8951901B2Superior integrity of a high-K gate stack by forming a controlled undercut on the basis of a wet chemistryBEYER SVEN·Filed 2011·Granted Feb 10, 2015·2 cites·18 claims
- 0663US6812159B2Method of forming a low leakage dielectric layer providing an increased capacitive couplingADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·8 cites·33 claims
- 0762US6875676B2Methods for producing a highly doped electrode for a field effect transistorADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 5, 2005·8 cites·24 claims
- 0859US6703278B2Method of forming layers of oxide on a surface of a substrateADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 9, 2004·7 cites·96 claims
- 0954US2015137270A1Superior integrity of a high-k gate stack by forming a controlled undercut on the basis of a wet chemistryGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 1040US2009246371A1Method of forming thin layers by a thermally activated process using a temperature gradient across the substrateKOEHLER FABIAN·Filed 2008·Application pending·0 cites
- 1138US2005233532A1Method of forming sidewall spacersLENSKI MARKUS·Filed 2005·Application pending·0 cites
- 1238US2004192057A1Technique for forming an oxide/nitride layer stack by compensating nitrogen non-uniformitiesFiled 2003·Application pending·0 cites
- 1337US6900111B2Method of forming a thin oxide layer having improved reliability on a semiconductor surfaceADVANCED MICRO DEVICES INC·Filed 2002·Granted May 31, 2005·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →