Assignee
BEYER SVEN
DE·13 granted patents·2 pending applications·70 citations·filing 2008–2012
Top patents by PatentIndex Score
15 records- 0189US8791509B2Multiple gate transistor having homogenously silicided fin end portionsBEYER SVEN·Filed 2009·Granted Jul 29, 2014·20 cites·20 claims
- 0288US8198152B2Transistors comprising high-k metal gate electrode structures and adapted channel semiconductor materialsBEYER SVEN·Filed 2010·Granted Jun 12, 2012·10 cites·14 claims
- 0385US8232188B2High-K metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterningBEYER SVEN·Filed 2010·Granted Jul 31, 2012·8 cites·9 claims
- 0482US8283232B2Enhanced etch stop capability during patterning of silicon nitride including layer stacks by providing a chemically formed oxide layer during semiconductor processingBEYER SVEN·Filed 2010·Granted Oct 9, 2012·7 cites·25 claims
- 0576US8652956B2High-k metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterningBEYER SVEN·Filed 2012·Granted Feb 18, 2014·4 cites·16 claims
- 0674US8318598B2Contacts and vias of a semiconductor device formed by a hard mask and double exposureBEYER SVEN·Filed 2009·Granted Nov 27, 2012·6 cites·25 claims
- 0772US8524591B2Maintaining integrity of a high-K gate stack by passivation using an oxygen plasmaBEYER SVEN·Filed 2010·Granted Sep 3, 2013·3 cites·22 claims
- 0871US8951901B2Superior integrity of a high-K gate stack by forming a controlled undercut on the basis of a wet chemistryBEYER SVEN·Filed 2011·Granted Feb 10, 2015·2 cites·18 claims
- 0971US8536036B2Predoped semiconductor material for a high-K metal gate electrode structure of P- and N-channel transistorsBEYER SVEN·Filed 2010·Granted Sep 17, 2013·3 cites·20 claims
- 1067US8293610B2Semiconductor device comprising a metal gate stack of reduced height and method of forming the sameBEYER SVEN·Filed 2008·Granted Oct 23, 2012·3 cites·18 claims
- 1164US8450163B2Semiconductor device comprising metal gates and semiconductor resistors formed on the basis of a replacement gate approachBEYER SVEN·Filed 2010·Granted May 28, 2013·2 cites·19 claims
- 1264US8329549B2Enhancing integrity of a high-k gate stack by protecting a liner at the gate bottom during gate head exposureBEYER SVEN·Filed 2009·Granted Dec 11, 2012·2 cites·17 claims
- 1345US2010025742A1Transistor having a strained channel region caused by hydrogen-induced lattice deformationBEYER SVEN·Filed 2009·Application pending·0 cites
- 1439US8728924B2Gate electrodes of a semiconductor device formed by a hard mask and double exposure in combination with a shrink spacerBEYER SVEN·Filed 2011·Granted May 20, 2014·0 cites·9 claims
- 1539US2012292637A1Dual Cavity Etch for Embedded Stressor RegionsBEYER SVEN·Filed 2011·Application pending·0 cites
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