Inventor · disambiguated record
Yi Qi
Also filed as: QI YI · QI YI-GUO
49 granted patents·9 pending applications·313 citations·filing 2010–2022
98Inventor score
Top patents by PatentIndex Score
58 records- 0198US10163635B1Asymmetric spacer for preventing epitaxial merge between adjacent devices of a semiconductor and related methodGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·26 cites·13 claims
- 0297US10249538B1Method of forming vertical field effect transistors with different gate lengths and a resulting structureGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 2, 2019·22 cites·19 claims
- 0397US10217846B1Vertical field effect transistor formation with critical dimension controlGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 26, 2019·21 cites·11 claims
- 0497US10170473B1Forming long channel FinFET with short channel vertical FinFET and related integrated circuitGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 1, 2019·20 cites·9 claims
- 0595US10211147B2Metal-insulator-metal capacitors with dielectric inner spacersGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 19, 2019·11 cites·20 claims
- 0695US9887094B1Methods of forming EPI semiconductor material on the source/drain regions of a FinFET deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 6, 2018·14 cites·12 claims
- 0794US10446483B2Metal-insulator-metal capacitors with enlarged contact areasGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 15, 2019·12 cites·20 claims
- 0894US9397200B2Methods of forming 3D devices with dielectric isolation and a strained channel regionGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 19, 2016·12 cites·21 claims
- 0994US9123627B1Methods of forming alternative material fins with reduced defect density for a FinFET semiconductor deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 1, 2015·17 cites·25 claims
- 1093US10559656B2Wrap-all-around contact for nanosheet-FET and method of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 11, 2020·8 cites·9 claims
- 1193US10068810B1Multiple Fin heights with dielectric isolationGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 4, 2018·9 cites·10 claims
- 1293US8152566B1Electrical connector with resilient arm configured in fixed ended beam manner formed on metal shellLITTLE TERRANCE F·Filed 2011·Granted Apr 10, 2012·31 cites·12 claims
- 1391US10050125B1Vertical-transport field-effect transistors with an etched-through source/drain cavityGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 14, 2018·6 cites·17 claims
- 1490US10381459B2Transistors with H-shaped or U-shaped channels and method for forming the sameGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 13, 2019·6 cites·11 claims
- 1590US9524908B2Methods of removing portions of fins by preforming a selectively etchable material in the substrateGLOBALFOUNDRIES INC·Filed 2014·Granted Dec 20, 2016·11 cites·22 claims
- 1690US9431539B2Dual-strained nanowire and FinFET devices with dielectric isolationGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 30, 2016·11 cites·13 claims
- 1790US8439708B2Electrical connector with cantilevered arm integrally formed on metal shellCOLANTUONO ROBERT·Filed 2011·Granted May 14, 2013·31 cites·12 claims
- 1888US9502638B2Method of manufacturing flexible piezoelectric structuresMCALPINE MICHAEL C·Filed 2012·Granted Nov 22, 2016·9 cites·14 claims
- 1983US10068902B1Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 4, 2018·4 cites·4 claims
- 2083US9837268B2Raised fin structures and methods of fabricationGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 5, 2017·3 cites·19 claims
- 2183US9478663B2FinFET device including a uniform silicon alloy finGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 25, 2016·5 cites·20 claims
- 2282US9224605B2Forming alternative material fins with reduced defect density by performing an implantation/anneal defect generation processGLOBALFOUNDRIES INC·Filed 2014·Granted Dec 29, 2015·5 cites·19 claims
- 2381US10756184B2Faceted epitaxial source/drain regionsGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 25, 2020·3 cites·17 claims
- 2478US9391140B2Raised fin structures and methods of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 12, 2016·3 cites·20 claims
- 2574US10903369B2Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regionsIBM·Filed 2019·Granted Jan 26, 2021·1 cites·4 claims
- 2672US10410929B2Multiple gate length device with self-aligned top junctionGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 10, 2019·1 cites·19 claims
- 2772US10211317B1Vertical-transport field-effect transistors with an etched-through source/drain cavityGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 19, 2019·1 cites·20 claims
- 2872US9099525B2Blanket EPI super steep retrograde well formation without Si recessKANG LAEGU·Filed 2012·Granted Aug 4, 2015·4 cites·11 claims
- 2972US8916442B2Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 23, 2014·2 cites·12 claims
- 3070US10297675B1Dual-curvature cavity for epitaxial semiconductor growthGLOBALFOUNDRIES INC·Filed 2017·Granted May 21, 2019·1 cites·13 claims
- 3169US10262903B2Boundary spacer structure and integrationGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 16, 2019·1 cites·15 claims
- 3267US10276689B2Method of forming a vertical field effect transistor (VFET) and a VFET structureGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 30, 2019·1 cites·11 claims
- 3367US10121868B1Methods of forming epi semiconductor material on a thinned fin in the source/drain regions of a FinFET deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 6, 2018·1 cites·20 claims
- 3457US10483172B2Transistor device structures with retrograde wells in CMOS applicationsGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 19, 2019·0 cites·16 claims
- 3557US9099380B2Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 4, 2015·0 cites·20 claims
- 3653US10643845B2Repaired mask structures and resultant underlying patterned structuresGLOBALFOUNDRIES INC·Filed 2018·Granted May 5, 2020·0 cites·18 claims
- 3753US9852954B2Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Dec 26, 2017·0 cites·19 claims
- 3852US10957799B2Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regionsIBM·Filed 2019·Granted Mar 23, 2021·0 cites·15 claims
- 3952US9209181B2Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structuresGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 8, 2015·0 cites·10 claims
- 4052US2014044889A1Methods of making stressed material layers and a system for forming such layersQI YI·Filed 2012·Application pending·0 cites
- 4151US2019181243A1Dual-curvature cavity for epitaxial semiconductor growthGLOBALFOUNDRIES INC·Filed 2019·Application pending·0 cites
- 4250US12467785B2Cascaded, self-calibrated, single-pixel infrared hadamard transform spectrometerNAT UNIV SINGAPORE·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 4350US10680065B2Field-effect transistors with a grown silicon-germanium channelGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 9, 2020·0 cites·8 claims
- 4450US10636894B2Fin-type transistors with spacers on the gatesGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 28, 2020·0 cites·19 claims
- 4549US10546775B1Field-effect transistors with improved dielectric gap fillGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 28, 2020·0 cites·19 claims
- 4649US9362357B2Blanket EPI super steep retrograde well formation without Si recessGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·0 cites·20 claims
- 4748US10700173B2FinFET device with a wrap-around silicide source/drain contact structureGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 30, 2020·0 cites·16 claims
- 4847US9490123B2Methods of forming strained epitaxial semiconductor material(S) above a strain-relaxed buffer layerGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 8, 2016·0 cites·8 claims
- 4944US2015318169A1Methods of forming epitaxial semiconductor cladding material on fins of a finfet semiconductor deviceGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 5044US2011109203A1Flexible piezoelectric structures and method of making sameUNIV PRINCETON·Filed 2010·Application pending·0 cites
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →