Inventor · disambiguated record
Rolf Stephan
Also filed as: STEPHAN ROLF
38 granted patents·7 pending applications·644 citations·filing 2000–2012
98Inventor score
Files withADVANCED MICRO DEVICES INC29GLOBALFOUNDRIES INC4TRENTZSCH MARTIN3STEPHAN ROLF2BAARS PETER1
Top patents by PatentIndex Score
45 records- 0198US7297994B2Semiconductor device having a retrograde dopant profile in a channel regionADVANCED MICRO DEVICES INC·Filed 2005·Granted Nov 20, 2007·117 cites·11 claims
- 0296US6881641B2Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the sameADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 19, 2005·132 cites·49 claims
- 0393US7608499B2Semiconductor structure comprising field effect transistors with stressed channel regions and method of forming the sameADVANCED MICRO DEVICES INC·Filed 2007·Granted Oct 27, 2009·23 cites·24 claims
- 0489US7238578B2Method of forming a semiconductor structure comprising transistor elements with differently stressed channel regionsADVANCED MICRO DEVICES INC·Filed 2005·Granted Jul 3, 2007·15 cites·18 claims
- 0587US6620718B1Method of forming metal silicide regions on a gate electrode and on the source/drain regions of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 16, 2003·47 cites·21 claims
- 0687US6306698B1Semiconductor device having metal silicide regions of differing thicknesses above the gate electrode and the source/drain regions, and method of making sameADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 23, 2001·46 cites·17 claims
- 0784US6268257B1Method of forming a transistor having a low-resistance gate electrodeADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 31, 2001·37 cites·28 claims
- 0881US8846513B2Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fillBAARS PETER·Filed 2011·Granted Sep 30, 2014·6 cites·22 claims
- 0981US8796807B2Temperature monitoring in a semiconductor device by using a PN junction based on silicon/germanium materialsSTEPHAN ROLF·Filed 2011·Granted Aug 5, 2014·8 cites·6 claims
- 1081US7325224B2Method and system for increasing product yield by controlling lithography on the basis of electrical speed dataADVANCED MICRO DEVICES INC·Filed 2004·Granted Jan 29, 2008·22 cites·41 claims
- 1181US6566718B2Field effect transistor with an improved gate contact and method of fabricating the sameADVANCED MICRO DEVICES INC·Filed 2001·Granted May 20, 2003·33 cites·32 claims
- 1279US6423634B1Method of forming low resistance metal silicide region on a gate electrode of a transistorADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 23, 2002·27 cites·38 claims
- 1378US8735236B2High-k metal gate electrode structure formed by removing a work function on sidewalls in replacement gate technologyHEMPEL KLAUS·Filed 2011·Granted May 27, 2014·5 cites·17 claims
- 1478US8119461B2Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatmentTRENTZSCH MARTIN·Filed 2010·Granted Feb 21, 2012·5 cites·3 claims
- 1577US7605045B2Field effect transistors and methods for fabricating the sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Oct 20, 2009·7 cites·17 claims
- 1673US7745334B2Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniquesADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 29, 2010·4 cites·17 claims
- 1771US6846708B2Semiconductor device having improved doping profiles and a method of improving the doping profiles of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 25, 2005·13 cites·28 claims
- 1871US6593197B2Sidewall spacer based fet alignment technologyADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 15, 2003·16 cites·29 claims
- 1968US8871586B2Methods of reducing material loss in isolation structures by introducing inert atoms into oxide hard mask layer used in growing channel semiconductor materialGLOBALFOUNDRIES INC·Filed 2012·Granted Oct 28, 2014·2 cites·35 claims
- 2067US8293610B2Semiconductor device comprising a metal gate stack of reduced height and method of forming the sameBEYER SVEN·Filed 2008·Granted Oct 23, 2012·3 cites·18 claims
- 2167US7217657B2Semiconductor device having different metal silicide portions and method for fabricating the semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted May 15, 2007·13 cites·23 claims
- 2266US8003460B2Method of forming a semiconductor structure comprising a formation of at least one sidewall spacer structureGLOBALFOUNDRIES INC·Filed 2008·Granted Aug 23, 2011·3 cites·13 claims
- 2365US6798028B2Field effect transistor with reduced gate delay and method of fabricating the sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 28, 2004·12 cites·23 claims
- 2464US7727827B2Method of forming a semiconductor structureGLOBALFOUNDRIES INC·Filed 2007·Granted Jun 1, 2010·2 cites·15 claims
- 2562US6673665B2Semiconductor device having increased metal silicide portions and method of forming the semiconductorADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 6, 2004·10 cites·24 claims
- 2659US7226859B2Method of forming different silicide portions on different silicon-containing regions in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 5, 2007·6 cites·30 claims
- 2757US6924216B2Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 2, 2005·5 cites·55 claims
- 2853US6822430B2Method of assessing lateral dopant and/or charge carrier profilesADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 23, 2004·3 cites·36 claims
- 2952US8158065B2In situ monitoring of metal contamination during microstructure processingTRENTZSCH MARTIN·Filed 2009·Granted Apr 17, 2012·0 cites·18 claims
- 3052US7148145B2Semiconductor device having T-shaped gate structure comprising in situ sidewall spacers and method of forming the semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 12, 2006·5 cites·29 claims
- 3152US7115464B2Semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 3, 2006·5 cites·19 claims
- 3252US6770552B2Method of forming a semiconductor device having T-shaped gate structureADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 3, 2004·5 cites·30 claims
- 3352US6492210B2Method for fully self-aligned FET technologyADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 10, 2002·5 cites·32 claims
- 3447US2007207583A1Method of forming a semiconductor structure comprising transistor elements with differently stressed channel regionsADVANCED MICRO DEVICES INC·Filed 2007·Application pending·0 cites
- 3546US2009170339A1Reducing the creation of charge traps at gate dielectrics in mos transistors by performing a hydrogen treatmentTRENTZSCH MARTIN·Filed 2008·Application pending·0 cites
- 3645US7041583B2Method of removing features using an improved removal process in the fabrication of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted May 9, 2006·2 cites·23 claims
- 3743US7629211B2Field effect transistor and method of forming a field effect transistorADVANCED MICRO DEVICES INC·Filed 2007·Granted Dec 8, 2009·0 cites·7 claims
- 3843US2009218601A1Temperature monitoring in a semiconductor device by using an pn junction based on silicon/germanium materialSTEPHAN ROLF·Filed 2008·Application pending·0 cites
- 3943US2010203698A1Method of forming a semiconductor structureGLOBALFOUNDRIES INC·Filed 2010·Application pending·0 cites
- 4042US8288256B2Enhancing transistor characteristics by a late deep implantation in combination with a diffusion-free anneal processFEUDEL THOMAS·Filed 2008·Granted Oct 16, 2012·0 cites·17 claims
- 4139US7625802B2Semiconductor device having improved halo structures and a method of forming the halo structures of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 1, 2009·0 cites·9 claims
- 4239US2004087155A1Method of removing sidewall spacers in the fabrication of a semiconductor device using an improved removal processFiled 2003·Application pending·0 cites
- 4339US2013115773A1Prevention of ILD Loss in Replacement Gate Technologies by Surface TreatmenPAL ROHIT·Filed 2011·Application pending·0 cites
- 4439US2007200176A1Formation of silicided surfaces for silicon/carbon source/drain regionsKAMMLER THORSTEN·Filed 2006·Application pending·0 cites
- 4534US7563731B2Field effect transistor having a stressed dielectric layer based on an enhanced device topographyADVANCED MICRO DEVICES INC·Filed 2007·Granted Jul 21, 2009·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →