Inventor · disambiguated record
Chun Chen
Also filed as: CHEN CHUN · CHEN CHUN-PU
54 granted patents·12 pending applications·83 citations·filing 1997–2024
97Inventor score
Top patents by PatentIndex Score
66 records- 0196US9853039B1Split-gate flash cell formed on recessed substrateCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Dec 26, 2017·16 cites·19 claims
- 0295US12029041B2Method of forming high-voltage transistor with thin gate polyCYPRESS SEMICONDUCTOR CORP·Filed 2023·Granted Jul 2, 2024·1 cites·20 claims
- 0390US10014380B2Memory first process flow and deviceCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Jul 3, 2018·4 cites·14 claims
- 0490US8822289B2High voltage gate formationSPANSION LLC·Filed 2012·Granted Sep 2, 2014·9 cites·10 claims
- 0589US9368606B2Memory first process flow and deviceSPANSION LLC·Filed 2012·Granted Jun 14, 2016·9 cites·24 claims
- 0688US10872898B2Embedded non-volatile memory device and fabrication method of the sameCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Dec 22, 2020·4 cites·25 claims
- 0783US9917166B2Memory first process flow and deviceCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Mar 13, 2018·3 cites·14 claims
- 0882US8836006B2Integrated circuits with non-volatile memory and methods for manufactureSPANSION LLC·Filed 2012·Granted Sep 16, 2014·4 cites·13 claims
- 0981US9881683B1Suppression of program disturb with bit line and select gate voltage regulationCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Jan 30, 2018·4 cites·18 claims
- 1081US9209197B2Memory gate landing pad made from dummy featuresSPANSION LLC·Filed 2012·Granted Dec 8, 2015·5 cites·15 claims
- 1179US9589805B2Split-gate semiconductor device with L-shaped gateCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Mar 7, 2017·2 cites·8 claims
- 1277US10242996B2Method of forming high-voltage transistor with thin gate polyCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Mar 26, 2019·1 cites·20 claims
- 1377US9997253B1Non-volatile memory array with memory gate line and source line scramblingCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Jun 12, 2018·3 cites·21 claims
- 1474US11690227B2Method of forming high-voltage transistor with thin gate polyCYPRESS SEMICONDUCTOR CORP·Filed 2021·Granted Jun 27, 2023·0 cites·21 claims
- 1574US8441063B2Memory with extended charge trapping layerFANG SHENQING·Filed 2010·Granted May 14, 2013·4 cites·12 claims
- 1673US11342429B2Memory first process flow and deviceCYPRESS SEMICONDUCTOR CORP·Filed 2020·Granted May 24, 2022·0 cites·18 claims
- 1773US10685724B2Suppression of program disturb with bit line and select gate voltage regulationCYPRESS SEMICONDUCTOR CORP·Filed 2019·Granted Jun 16, 2020·2 cites·10 claims
- 1872US11450680B2Split gate charge trapping memory cells having different select gate and memory gate heightsCYPRESS SEMICONDUCTOR CORP·Filed 2020·Granted Sep 20, 2022·0 cites·13 claims
- 1970US10141393B1Three dimensional capacitorCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Nov 27, 2018·1 cites·17 claims
- 2066US10818761B2Memory first process flow and deviceCYPRESS SEMICONDUCTOR CORP·Filed 2019·Granted Oct 27, 2020·0 cites·8 claims
- 2165US11081194B2Suppression of program disturb with bit line and select gate voltage regulationCYPRESS SEMICONDUCTOR CORP·Filed 2020·Granted Aug 3, 2021·0 cites·20 claims
- 2265US10229745B2Suppression of program disturb with bit line and select gate voltage regulationCYPRESS SEMICONDUCTOR CORP·Filed 2018·Granted Mar 12, 2019·1 cites·20 claims
- 2364US8785275B2Non-volatile FINFET memory device and manufacturing method thereofSPANSION LLC·Filed 2014·Granted Jul 22, 2014·1 cites·10 claims
- 2463US10403731B2Memory first process flow and deviceCYPRESS SEMICONDUCTOR CORP·Filed 2018·Granted Sep 3, 2019·0 cites·20 claims
- 2562US8686492B2Non-volatile FINFET memory device and manufacturing method thereofCHEN CHUN·Filed 2010·Granted Apr 1, 2014·1 cites·10 claims
- 2662US8598646B2Non-volatile FINFET memory array and manufacturing method thereofCHEN CHUN·Filed 2011·Granted Dec 3, 2013·1 cites·11 claims
- 2762US2019304990A1Method of Forming High-Voltage Transistor with Thin Gate PolyCYPRESS SEMICONDUCTOR CORP·Filed 2019·Application pending·0 cites
- 2861US10593688B2Split-gate semiconductor device with L-shaped gateCYPRESS SEMICONDUCTOR CORP·Filed 2018·Granted Mar 17, 2020·0 cites·21 claims
- 2961US9481020B2Bending an edge portion of a housing panelHEWLETT PACKARD DEVELOPMENT CO LP·Filed 2013·Granted Nov 1, 2016·1 cites·16 claims
- 3061US2024206183A1High-voltage transistor with thin high-k metal gate and method of fabrication thereofCYPRESS SEMICONDUCTOR CORP·Filed 2024·Application pending·0 cites
- 3159US10777568B2Split gate charge trapping memory cells having different select gate and memory gate heightsCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Sep 15, 2020·0 cites·12 claims
- 3259US10686044B2Multi-layer inter-gate dielectric structure and method of manufacturing thereofCYPRESS SEMICONDUCTOR CORP·Filed 2018·Granted Jun 16, 2020·0 cites·19 claims
- 3359US2021134811A1Embedded non-volatile memory device and fabrication method of the sameCYPRESS SEMICONDUCTOR CORP·Filed 2020·Application pending·0 cites
- 3458US8076199B2Method and device employing polysilicon scalingFANG SHENQING·Filed 2009·Granted Dec 13, 2011·1 cites·14 claims
- 3557US9368588B2Integrated circuits with non-volatile memory and methods for manufactureSPANSION LLC·Filed 2014·Granted Jun 14, 2016·0 cites·14 claims
- 3656US10923601B2Charge trapping split gate device and method of fabricating sameCYPRESS SEMICONDUCTOR CORP·Filed 2018·Granted Feb 16, 2021·0 cites·20 claims
- 3756US10497710B2Split-gate flash cell formed on recessed substrateCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Dec 3, 2019·0 cites·21 claims
- 3856US10020316B2Split-gate semiconductor device with L-shaped gateCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Jul 10, 2018·0 cites·21 claims
- 3955US9368644B2Gate formation memory by planarizationCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Jun 14, 2016·0 cites·10 claims
- 4055US9052871B2Recess for memory cardCHEN CHUN-PU·Filed 2012·Granted Jun 9, 2015·1 cites·9 claims
- 4154US9590079B2Use disposable gate cap to form transistors, and split gate charge trapping memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Mar 7, 2017·0 cites·10 claims
- 4254US9508736B2Three-dimensional charge trapping NAND cell with discrete charge trapping filmCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Nov 29, 2016·0 cites·9 claims
- 4353US10192747B2Multi-layer inter-gate dielectric structure and method of manufacturing thereofCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Jan 29, 2019·0 cites·12 claims
- 4453US2014167142A1Use Disposable Gate Cap to Form Transistors, and Split Gate Charge Trapping Memory CellsSPANSION LLC·Filed 2012·Application pending·0 cites
- 4552US9373514B2Non-volatile FINFET memory array and manufacturing method thereofSPANSION LLC·Filed 2013·Granted Jun 21, 2016·0 cites·22 claims
- 4652US2016218113A1Integrated Circuits with Non-Volatile Memory and Methods for ManufactureCYPRESS SEMICONDUCTOR CORP·Filed 2016·Application pending·0 cites
- 4751US10446245B2Non-volatile memory array with memory gate line and source line scramblingCYPRESS SEMICONDUCTOR CORP·Filed 2018·Granted Oct 15, 2019·0 cites·19 claims
- 4851US10236299B2Three-dimensional charge trapping NAND cell with discrete charge trapping filmCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Mar 19, 2019·0 cites·16 claims
- 4951US2014167141A1Charge Trapping Split Gate Embedded Flash Memory and Associated MethodsSPANSION LLC·Filed 2012·Application pending·0 cites
- 5051US2014332876A1High voltage gate formationSPANSION LLC·Filed 2014·Application pending·0 cites
Showing the top 50 of 66 patent records by PatentIndex Score.
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