Integrated Circuits with Non-Volatile Memory and Methods for Manufacture

Abstract

Semiconductor devices and methods of manufacturing thereof are described. According to an example embodiment, a semiconductor device comprises: a substrate comprising a core region and a peripheral region, where the core region is adjacent to the peripheral region; a memory array comprising non-volatile memory cells that are located in the core region of the substrate; a high-voltage control logic comprising high-voltage transistors that are located in the peripheral region of the substrate; and a low-voltage control logic comprising low-voltage transistors that are located in the peripheral region of the substrate.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a substrate comprising a core region and a peripheral region, wherein the core region is adjacent to the peripheral region;   a memory array comprising non-volatile memory cells, wherein the non-volatile memory cells are located in the core region of the substrate;   a high-voltage control logic comprising high-voltage transistors, wherein the high-voltage transistors are located in the peripheral region of the substrate; and   a low-voltage control logic comprising low-voltage transistors, wherein the low-voltage transistors are located in the peripheral region of the substrate.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the non-volatile memory cells comprise split-gate non-volatile memory cells. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the high-voltage control logic is configured to control portions of the memory array. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the low-voltage control logic is configured to control the operation of the semiconductor device. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the low-voltage control logic includes a micro-controller. 
     
     
         6 . The semiconductor device of  claim 1 , wherein the substrate comprises a particular area that includes the core region and the peripheral region.