Inventor · disambiguated record
Hideki Makiyama
Also filed as: MAKIYAMA HIDEKI
35 granted patents·8 pending applications·70 citations·filing 2001–2024
96Inventor score
Files withRENESAS ELECTRONICS CORP37MAKIYAMA HIDEKI2HORITA KATSUYUKI1SEIKO EPSON CORP1YAMAMOTO YOSHIKI1
Top patents by PatentIndex Score
43 records- 0194US9196705B2Method of manufacturing a misfet on an SOI substrateRENESAS ELECTRONICS CORP·Filed 2014·Granted Nov 24, 2015·10 cites·7 claims
- 0294US8941178B2MOS field-effect transistor formed on the SOI substrateRENESAS ELECTRONICS CORP·Filed 2013·Granted Jan 27, 2015·9 cites·3 claims
- 0393US9484433B2Method of manufacturing a MISFET on an SOI substrateRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 1, 2016·5 cites·9 claims
- 0491US12261205B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2024·Granted Mar 25, 2025·0 cites·15 claims
- 0591US11562897B1Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2021·Granted Jan 24, 2023·2 cites·7 claims
- 0686US11996448B2Manufacturing method of semiconductor device including field-effect transistor comprising buried oxide (BOX) film and silicon layerRENESAS ELECTRONICS CORP·Filed 2023·Granted May 28, 2024·0 cites·15 claims
- 0786US9201440B2Semiconductor integrated circuit deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Dec 1, 2015·7 cites·7 claims
- 0885US9130039B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Sep 8, 2015·5 cites·2 claims
- 0982US10461158B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2018·Granted Oct 29, 2019·1 cites·10 claims
- 1082US9960183B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted May 1, 2018·3 cites·17 claims
- 1182US9887301B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Feb 6, 2018·4 cites·14 claims
- 1280US9202761B2Semiconductor integrated circuit device and manufacturing method for semiconductor integrated circuit deviceMAKIYAMA HIDEKI·Filed 2012·Granted Dec 1, 2015·6 cites·7 claims
- 1378US11658211B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2021·Granted May 23, 2023·0 cites·21 claims
- 1478US9343527B2Semiconductor device including an isolation film buried in a grooveRENESAS ELECTRONICS CORP·Filed 2012·Granted May 17, 2016·3 cites·7 claims
- 1578US9024386B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2012·Granted May 5, 2015·3 cites·17 claims
- 1676US8975699B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Mar 10, 2015·3 cites·2 claims
- 1773US9029951B2Semiconductor device having well regions with opposite conductivityHORITA KATSUYUKI·Filed 2012·Granted May 12, 2015·3 cites·18 claims
- 1872US10263012B2Semiconductor integrated circuit device comprising MISFETs in SOI and bulk substrate regionsRENESAS ELECTRONICS CORP·Filed 2018·Granted Apr 16, 2019·1 cites·7 claims
- 1971US10366914B2Method of manufacturing semiconductor device and semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Jul 30, 2019·1 cites·10 claims
- 2071US2020013857A1Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2019·Application pending·0 cites
- 2170US10446401B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Oct 15, 2019·1 cites·14 claims
- 2269US8872267B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2012·Granted Oct 28, 2014·2 cites·19 claims
- 2368US9484271B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 1, 2016·1 cites·6 claims
- 2467US10263078B2Method of manufacturing a MISFET on an SOI substrateRENESAS ELECTRONICS CORP·Filed 2018·Granted Apr 16, 2019·0 cites·10 claims
- 2565US9978839B2Method of manufacturing a MOSFET on an SOI substrateRENESAS ELECTRONICS CORP·Filed 2017·Granted May 22, 2018·0 cites·7 claims
- 2664US9773872B2Method of manufacturing a semiconductor device to prevent occurrence of short-channel characteristics and parasitic capacitanceRENESAS ELECTRONICS CORP·Filed 2016·Granted Sep 26, 2017·0 cites·4 claims
- 2761US2004254828A1Information offering apparatus, information offering method, program and productFiled 2004·Application pending·0 cites
- 2860US2024290791A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2955US10014385B2Manufacturing method of semiconductor device and semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Jul 3, 2018·0 cites·4 claims
- 3053US10056406B2Semiconductor integrated circuit device comprising MISFETs in SOI and bulk subtrate regionsRENESAS ELECTRONICS CORP·Filed 2015·Granted Aug 21, 2018·0 cites·6 claims
- 3152US10297613B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted May 21, 2019·0 cites·11 claims
- 3250US9806165B2Manufacturing method of semiconductor device and semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Oct 31, 2017·0 cites·8 claims
- 3350US9460936B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Oct 4, 2016·0 cites·9 claims
- 3450US2002059214A1User support systemSEIKO EPSON CORP·Filed 2001·Application pending·0 cites
- 3548US9484456B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 1, 2016·0 cites·7 claims
- 3648US9293347B2Semiconductor device and method of manufacturing the sameYAMAMOTO YOSHIKI·Filed 2012·Granted Mar 22, 2016·0 cites·12 claims
- 3748US2016043717A1Semiconductor integrated circuit deviceRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 3848US2016181147A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Application pending·0 cites
- 3947US9142567B2SOI SRAM having well regions with opposite conductivityRENESAS ELECTRONICS CORP·Filed 2015·Granted Sep 22, 2015·0 cites·1 claims
- 4035US10325899B2Semiconductor device including transistors formed in regions of semiconductor substrate and operation method of the sameRENESAS ELECTRONICS CORP·Filed 2018·Granted Jun 18, 2019·0 cites·15 claims
- 4135US9455273B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Sep 27, 2016·0 cites·20 claims
- 4234US2016013207A1Semiconductor device and manufacturing method for the sameRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 4333US2012061761A1Semiconductor integrated circuit device and manufacturing method for semiconductor integrated circuit devicesMAKIYAMA HIDEKI·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →