Semiconductor device and manufacturing method of the same

Abstract

A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the SOI substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed. Then, an impurity is implanted into an upper surface of the semiconductor substrate with using the gate electrode and the epitaxial layer as a mask, so that a halo region is formed in only a region of the upper surface of the semiconductor substrate which is right below a vicinity of both ends of the gate electrode.

1 - 8 . (canceled) 
     
     
         9 . A semiconductor device comprising:
 a semiconductor substrate;   a BOX film formed on the semiconductor substrate;   a silicon layer formed on the BOX film;   a gate electrode formed on the silicon layer via a gate insulating film;   a first insulating film formed on each of a side wall of the gate electrode and an upper surface of the silicon layer;   an epitaxial layer formed on the upper surface of the silicon layer exposed from each of the gate electrode and the first insulating film;   a second insulating film formed on the side wall of the gate electrode via the first insulating film;   an extension region formed at a portion of the silicon layer, which is overlapped with the first insulating film; and   a diffusion layer formed in the epitaxial layer exposed from each of the gate electrode and the first insulating film, and formed at a portion of the silicon layer, which is overlapped with the epitaxial layer,   wherein each of the extension region and the diffusion layer is a semiconductor region into which an impurity of a first conductivity type is introduced, and   wherein an impurity concentration of the diffusion layer is higher than an impurity concentration of the extension region.   
     
     
         10 . The semiconductor device according to  claim 9 ,
 wherein the semiconductor substrate is comprised of silicon (Si),   wherein the BOX film is a silicon oxide film,   wherein the silicon layer is comprised of monocrystalline silicon having a resistance of 1 to 10 Ωcm,   wherein a thickness of the BOX film is 10 to 50 nm, and   wherein a thickness of the silicon layer is 5 to 15 nm.   
     
     
         11 . The semiconductor device according to  claim 10 , wherein a thickness of the epitaxial layer is 20 to 50 nm. 
     
     
         12 . The semiconductor device according to  claim 11 ,
 wherein the first insulating film is a silicon oxide film,   wherein the second insulating film is a silicon nitride film, and   wherein a thickness of the first insulating film is about 5 nm.   
     
     
         13 . The semiconductor device according to  claim 9 ,
 wherein a silicide layer is formed in the diffusion layer,   wherein a field effect transistor of the first conductivity type, which is comprised of the gate electrode, the extension region and the diffusion layer, is covered with an interlayer insulating film, and   wherein a first contact plug penetrating through the interlayer insulating film is connected to the silicide layer formed in the diffusion layer.   
     
     
         14 . The semiconductor device according to  claim 13 ,
 wherein the gate electrode is a doped polysilicon film into which an impurity of the first conductivity type is implanted,   wherein a silicide layer is formed in the gate electrode, and   wherein a second contact plug penetrating through the interlayer insulating film is connected to the silicide layer formed in the gate electrode.   
     
     
         15 . The semiconductor device according to  claim 14 ,
 wherein the doped polysilicon film configuring the gate electrode is comprised of one of phosphorous (P) and arsenic (As), and   wherein the semiconductor region configuring each of the extension region and the diffusion layer is comprised of arsenic (As).   
     
     
         16 . The semiconductor device according to  claim 13 ,
 wherein the gate electrode is comprised of a metal film, and   wherein the gate electrode is formed on the silicon layer via the gate insulating film comprised of a high dielectric-constant insulating film.   
     
     
         17 . The semiconductor device according to  claim 16 ,
 wherein the metal film is a titanium nitride (TiN) film, and   wherein the high dielectric-constant insulating film is an insulating film containing hafnium (Hf).   
     
     
         18 . The semiconductor device according to  claim 9 , wherein the extension region is formed at a portion of the silicon layer, which is overlapped with each of the first insulating film and the second insulating film. 
     
     
         19 . The semiconductor device according to  claim 18 , wherein, in cross-section view, a thickness of the extension region is thinner than a thickness of the diffusion layer. 
     
     
         20 . The semiconductor device according to  claim 19 , wherein, in cross-section view, a depth of the extension region from the upper surface of the silicon layer is less than a depth of the diffusion layer from the upper surface of the silicon layer. 
     
     
         21 . The semiconductor device according to  claim 20 , wherein the extension region is formed between the diffusion layer and a channel region to be formed at a portion of the silicon layer, which is right below the gate electrode.