Inventor · disambiguated record
Wanxun He
Also filed as: HE WANXUN
22 granted patents·2 pending applications·163 citations·filing 2013–2019
94Inventor score
Top patents by PatentIndex Score
24 records- 0198US9171752B1Product comprised of FinFET devices with single diffusion break isolation structures, and methods of making such a productGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 27, 2015·83 cites·17 claims
- 0297US9263516B1Product comprised of FinFET devices with single diffusion break isolation structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 16, 2016·22 cites·11 claims
- 0396US10008614B1Dual channel transistorUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jun 26, 2018·19 cites·18 claims
- 0494US9806191B1Vertical channel oxide semiconductor field effect transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Oct 31, 2017·9 cites·8 claims
- 0590US9793345B1Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Oct 17, 2017·7 cites·20 claims
- 0687US9871049B1Static random access memory device and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 16, 2018·5 cites·20 claims
- 0786US9865654B1Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 9, 2018·5 cites·11 claims
- 0883US9087720B1Methods for forming FinFETs with reduced series resistanceGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 21, 2015·5 cites·20 claims
- 0980US10978556B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Apr 13, 2021·2 cites·10 claims
- 1078US9887238B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 6, 2018·2 cites·9 claims
- 1169US10177156B2Static random access memory having insulating layer with different thicknessesUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 8, 2019·1 cites·10 claims
- 1269US9837497B1Channel structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted Dec 5, 2017·1 cites·18 claims
- 1368US9508794B2Mixed N/P-type fin semiconductor structure with epitaxial materials having increased surface area through multiple epitaxial headsGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 29, 2016·1 cites·9 claims
- 1466US9275906B2Method for increasing a surface area of epitaxial structures in a mixed N/P type fin semiconductor structure by forming multiple epitaxial headsGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 1, 2016·1 cites·8 claims
- 1557US9997627B2Vertical channel oxide semiconductor field effect transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jun 12, 2018·0 cites·10 claims
- 1656US10347645B2Method for fabricating static random access memory having insulating layer with different thicknessesUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jul 9, 2019·0 cites·10 claims
- 1755US10062734B2Method for fabricating a semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 28, 2018·0 cites·10 claims
- 1855US9123772B2FinFET fabrication methodGLOBALFOUNDARIES INC·Filed 2013·Granted Sep 1, 2015·0 cites·20 claims
- 1951US10256297B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Apr 9, 2019·0 cites·10 claims
- 2050US9793358B2Non-planar semiconductor device with multiple-head epitaxial structure on finGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 17, 2017·0 cites·10 claims
- 2147US2015333062A1Finfet fabrication methodGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 2242US10347733B2Radiofrequency switch device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jul 9, 2019·0 cites·17 claims
- 2342US10062701B2Static random access memory unit cellUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 28, 2018·0 cites·8 claims
- 2433US2016315084A1Different height of fins in semiconductor structureGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →