Inventor · disambiguated record
Hyungsuk Alexander Yoon
Also filed as: YOON HYUNGSUK · YOON HYUNGSUK A · YOON HYUNGSUK ALEXANDER
39 granted patents·27 pending applications·744 citations·filing 2000–2020
98Inventor score
Top patents by PatentIndex Score
66 records- 0198US6846516B2Multiple precursor cyclical deposition systemAPPLIED MATERIALS INC·Filed 2002·Granted Jan 25, 2005·197 cites·15 claims
- 0295US8673779B1Interconnect with self-formed barrierLAM RES CORP·Filed 2013·Granted Mar 18, 2014·24 cites·20 claims
- 0395US6827978B2Deposition of tungsten filmsAPPLIED MATERIALS INC·Filed 2002·Granted Dec 7, 2004·109 cites·43 claims
- 0494US7651585B2Apparatus for the removal of an edge polymer from a substrate and methods thereforLAM RES CORP·Filed 2005·Granted Jan 26, 2010·27 cites·13 claims
- 0594US7615480B2Methods of post-contact back end of the line through-hole via integrationLAM RES CORP·Filed 2007·Granted Nov 10, 2009·22 cites·17 claims
- 0694US6809026B2Selective deposition of a barrier layer on a metal filmAPPLIED MATERIALS INC·Filed 2002·Granted Oct 26, 2004·92 cites·43 claims
- 0793US6596643B2CVD TiSiN barrier for copper integrationAPPLIED MATERIALS INC·Filed 2001·Granted Jul 22, 2003·60 cites·20 claims
- 0891US8241701B2Processes and systems for engineering a barrier surface for copper depositionDORDI YEZDI·Filed 2006·Granted Aug 14, 2012·16 cites·28 claims
- 0990US8883027B2Methods for removing a metal oxide from a substrateYOON HYUNGSUK ALEXANDER·Filed 2010·Granted Nov 11, 2014·10 cites·30 claims
- 1090US8287647B2Apparatus and method for atomic layer depositionYOON HYUNGSUK ALEXANDER·Filed 2007·Granted Oct 16, 2012·12 cites·7 claims
- 1190US7396565B2Multiple precursor cyclical deposition systemAPPLIED MATERIALS INC·Filed 2004·Granted Jul 8, 2008·33 cites·15 claims
- 1289US6958296B2CVD TiSiN barrier for copper integrationAPPLIED MATERIALS INC·Filed 2003·Granted Oct 25, 2005·40 cites·4 claims
- 1386US8916232B2Method for barrier interface preparation of copper interconnectYOON HYUNGSUK ALEXANDER·Filed 2006·Granted Dec 23, 2014·9 cites·30 claims
- 1485US8026605B2Interconnect structure and method of manufacturing a damascene structureLAM RES CORP·Filed 2006·Granted Sep 27, 2011·8 cites·18 claims
- 1584US7662253B2Apparatus for the removal of a metal oxide from a substrate and methods thereforLAM RES CORP·Filed 2005·Granted Feb 16, 2010·8 cites·20 claims
- 1683US8519461B2Device with post-contact back end of line through-hole via integrationBOYD JOHN·Filed 2012·Granted Aug 27, 2013·4 cites·5 claims
- 1783US7615486B2Apparatus and method for integrated surface treatment and deposition for copper interconnectLAM RES CORP·Filed 2007·Granted Nov 10, 2009·7 cites·22 claims
- 1882US8127395B2Apparatus for isolated bevel edge clean and method for using the sameYOON HYUNGSUK ALEXANDER·Filed 2006·Granted Mar 6, 2012·8 cites·14 claims
- 1981US7691278B2Apparatus for the removal of a fluorinated polymer from a substrate and methods thereforLAM RES CORP·Filed 2005·Granted Apr 6, 2010·6 cites·20 claims
- 2081US6218301B1Deposition of tungsten films from W(CO)6APPLIED MATERIALS INC·Filed 2000·Granted Apr 17, 2001·23 cites·72 claims
- 2179US8926789B2Apparatus for the removal of a fluorinated polymer from a substrateYOON HYUNGSUK ALEXANDER·Filed 2010·Granted Jan 6, 2015·4 cites·19 claims
- 2278US9911660B2Methods for forming germanium and silicon germanium nanowire devicesLAM RES CORP·Filed 2016·Granted Mar 6, 2018·3 cites·10 claims
- 2376US8298433B2Methods for removing an edge polymer from a substrateYOON HYUNGSUK ALEXANDER·Filed 2009·Granted Oct 30, 2012·4 cites·18 claims
- 2475US9117860B2Controlled ambient system for interface engineeringBOYD JOHN·Filed 2006·Granted Aug 25, 2015·5 cites·13 claims
- 2574US8623456B2Methods for atomic layer depositionYOON HYUNGSUK ALEXANDER·Filed 2012·Granted Jan 7, 2014·2 cites·11 claims
- 2673US7749893B2Methods and systems for low interfacial oxide contact between barrier and copper metallizationLAM RES CORP·Filed 2006·Granted Jul 6, 2010·3 cites·14 claims
- 2771US8187968B2Methods of post-contact back end of line through-hole via integrationBOYD JOHN·Filed 2009·Granted May 29, 2012·2 cites·15 claims
- 2870US9472675B2Method of manufacturing n-doped graphene and electrical component using NH4F, and graphene and electrical component therebyKOREA ADVANCED INST SCI & TECH·Filed 2014·Granted Oct 18, 2016·3 cites·14 claims
- 2966US8323460B2Methods and systems for three-dimensional integrated circuit through hole via gapfill and overburden removalBOYD JOHN·Filed 2007·Granted Dec 4, 2012·0 cites·31 claims
- 3065US12127486B2Resistive random access memory with preformed filamentsLAM RES CORP·Filed 2020·Granted Oct 22, 2024·0 cites·16 claims
- 3164US8673769B2Methods and apparatuses for three dimensional integrated circuitsBOYD JOHN·Filed 2007·Granted Mar 18, 2014·2 cites·34 claims
- 3263US2013171820A1Methods for three-dimensional integrated circuit through hole via gapfill and overburden removalLAM RES CORP·Filed 2012·Application pending·0 cites
- 3357US2015132946A1Methods for barrier interface preparation of copper interconnectLAM RES CORP·Filed 2014·Application pending·0 cites
- 3457US2015128861A1Apparatus for barrier interface preparation of copper interconnectLAM RES CORP·Filed 2014·Application pending·0 cites
- 3556US2009320749A1Apparatus for integrated surface treatment and deposition for copper interconnectYOON HYUNGSUK ALEXANDER·Filed 2009·Application pending·0 cites
- 3655US8058164B2Methods of fabricating electronic devices using direct copper platingYOON HYUNGSUK ALEXANDER·Filed 2007·Granted Nov 15, 2011·1 cites·17 claims
- 3755US2016138166A1Systems and methods for forming selective metal electrode layers for resistive switching memoriesLAM RES CORP·Filed 2014·Application pending·0 cites
- 3854US9359673B2Apparatus and method for atomic layer depositionYOON HYUNGSUK ALEXANDER·Filed 2012·Granted Jun 7, 2016·0 cites·18 claims
- 3954US2008260967A1Apparatus and method for integrated surface treatment and film depositionYOON HYUNGSUK ALEXANDER·Filed 2007·Application pending·0 cites
- 4053US7863179B2Methods of fabricating a barrier layer with varying composition for copper metallizationLAM RES CORP·Filed 2006·Granted Jan 4, 2011·0 cites·26 claims
- 4152US2014145334A1Methods and apparatuses for three dimensional integrated circuitsLAM RES CORP·Filed 2014·Application pending·0 cites
- 4251US8053355B2Methods and systems for low interfacial oxide contact between barrier and copper metallizationLAM RES CORP·Filed 2010·Granted Nov 8, 2011·0 cites·14 claims
- 4351US2012269987A1Processes and Systems for Engineering a Barrier Surface for Copper DepositionDORDI YEZDI·Filed 2012·Application pending·0 cites
- 4448US11923189B2Capping layer for a hafnium oxide-based ferroelectric materialLAM RES CORP·Filed 2019·Granted Mar 5, 2024·0 cites·20 claims
- 4548US2011306203A1Interconnect structure and method of manufacturing a damascene structureDORDI YEZDI·Filed 2011·Application pending·0 cites
- 4648US2006040052A1Methods for depositing tungsten layers employing atomic layer deposition techniquesFANG HONGBIN·Filed 2003·Application pending·0 cites
- 4747US2011065273A1Methods of Fabricating a Barrier Layer Over Interconnect Structures in Atomic Deposition EnvironmentsLAM RES CORP·Filed 2010·Application pending·0 cites
- 4846US11923404B2Modifying ferroelectric properties of hafnium oxide with hafnium nitride layersLAM RES CORP·Filed 2019·Granted Mar 5, 2024·0 cites·16 claims
- 4946US2012118320A1Methods for Isolated Bevel Edge CleanYOON HYUNGSUK ALEXANDER·Filed 2012·Application pending·0 cites
- 5045US2008260963A1Apparatus and method for pre and post treatment of atomic layer depositionYOON HYUNGSUK ALEXANDER·Filed 2007·Application pending·0 cites
Showing the top 50 of 66 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →