Methods and apparatuses for three dimensional integrated circuits

Abstract

Methods and apparatuses for fabricating three-dimensional integrated circuits having through hole vias are provided. One aspect of the present invention is a method of gapfill for through hole vias for three-dimensional integrated circuits. The method comprises providing a semiconductor wafer having a plurality of holes for through hole vias and depositing a conformal metal layer to partially fill the holes to leave open voids. The method also includes purging the voids and cleaning the surface of the voids and using a dry deposition process to fill or close the voids. Another aspect of the present invention is an electronic device structure for a three-dimensional integrated circuit.

What is claimed is: 
     
         1 . An electronic device structure for a three-dimensional integrated circuit comprising,
 a substrate having a hole for through hole metallization interconnects;   a metallization barrier layer lining the walls of the hole;   a conformal metal deposited in the hole by a wet chemical process forming an outer core, and   a material deposited by a dry chemical process forming an inner core within the outer core.   
     
     
         2 . The electronic device structure of  claim 1 , wherein the metallization barrier layer comprises tantalum nitride. 
     
     
         3 . The electronic device structure of  claim 1 , wherein the outer core comprises copper. 
     
     
         4 . The electronic device structure of  claim 1 , wherein the outer core comprises copper and the inner core comprises copper. 
     
     
         5 . The electronic device structure of  claim 1 , wherein the outer core comprises copper and the inner core comprises silicon, silicon carbide, silicon dioxide, silicon nitride, aluminum oxide, or aluminum nitride. 
     
     
         6 . The electronic device structure of  claim 1 , wherein the outer core comprises copper and the inner core comprises tantalum, tantalum carbide, tantalum nitride, ruthenium, or cobalt.