US2006040052A1PendingUtilityA1

Methods for depositing tungsten layers employing atomic layer deposition techniques

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Assignee: FANG HONGBINPriority: Oct 10, 2001Filed: Apr 18, 2003Published: Feb 23, 2006
Est. expiryOct 10, 2021(expired)· nominal 20-yr term from priority
Inventors:Hongbin FangHyungsuk Alexander YoonKen Kaung LaiChi C. YoungChao-Ming HuangMing XiMichael YangHua Chung
C23C 16/455C23C 16/06C23C 16/08C23C 16/02C23C 16/045C23C 16/0218C23C 16/16C23C 16/0281C23C 16/45525
48
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Claims

Abstract

A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a soak. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane, disilane, dichlorosilane and derivatives thereof. A tungsten bulk layer may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.

Claims

exact text as granted — not AI-modified
1 . A method for forming a tungsten layer on a substrate surface, comprising: 
 positioning the substrate surface in a processing chamber;    exposing the substrate surface to a soak for a predetermined time, wherein the soak comprises a soak compound; and    depositing a nucleation layer in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas,-wherein the reducing gas comprises a reductant different than the soak compound.    
   
   
       2 . The method of  claim 1 , wherein the reductant is selected from the group consisting of hydrogen, silane, disilane, trisilane, dichlorosilane, borane, diborane, derivatives thereof, and combinations thereof.  
   
   
       3 . The method of  claim 2 , wherein the nucleation layer is deposited by alternately pulsing tungsten hexafluoride and silane.  
   
   
       4 . The method of  claim 2 , wherein the nucleation layer is deposited by alternately pulsing tungsten hexafluoride and diborane.  
   
   
       5 . The method of  claim 4 , wherein the nucleation layer has a thickness in a range from about 10 Å to about 200 Å.  
   
   
       6 . The method of  claim 2 , wherein the tungsten-containing compound is selected from the group consisting of tungsten hexafluoride and tungsten carbonyl.  
   
   
       7 . The method of  claim 6 , wherein the soak compound is selected from the group consisting of hydrogen, borane, diborane, hydrogen, silane, disilane, trisilane, dichlorosilane, derivatives thereof and combinations thereof.  
   
   
       8 . The method of  claim 7 , wherein exposing the substrate surface to the soak for the predetermined time is in a range from about 5 seconds to about 90 seconds.  
   
   
       9 . The method of  claim 1 , further comprising forming a bulk tungsten deposition film on the nucleation layer using atomic layer deposition, chemical vapor deposition or physical vapor deposition techniques.  
   
   
       10 . The method of  claim 7 , wherein exposing the substrate surface to the soak is at a temperature in a range from about 100° C. to about 400° C.  
   
   
       11 . The method of  claim 7 , wherein the substrate surface comprises titanium nitride.  
   
   
       12 . A method for forming a tungsten layer on a substrate surface, comprising: 
 exposing a substrate surface to diborane at a pressure range from about 1 Torr to about 50 Torr and at a temperature range from about 100° C. to about 400° C.;    depositing a nucleation layer by alternately pulsing a tungsten-containing compound and silane gas; and    forming a bulk tungsten deposition film on the nucleation layer.    
   
   
       13 . The method of  claim 12 , wherein exposing the substrate surface to diborane and depositing the nucleation layer occurs in the same chamber.  
   
   
       14 . The method of  claim 13 , wherein the nucleation layer has a thickness in a range from about 10 Å to about 200 Å.  
   
   
       15 . The method of  claim 14 , wherein the bulk tungsten deposition film has a thickness in a range from about 100 Å to about 5,000 Å.  
   
   
       16 . The method of  claim 13 , wherein exposing the substrate surface to diborane for a predetermined time is in a range from about 5 seconds to about 90 seconds.  
   
   
       17 . The method of  claim 12 , wherein the substrate surface comprise a barrier layer selected from the group consisting of titanium, titanium nitride, tungsten nitride, tantalum and tantalum nitride.  
   
   
       18 . A method for forming a tungsten layer on a substrate surface, comprising: 
 positioning the substrate surface in a processing chamber;    exposing the substrate surface to a diborane soak for a predetermined time;    depositing a nucleation layer in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas, wherein the reducing gas comprises a reductant; and    forming a bulk tungsten deposition film on the nucleation layer.    
   
   
       19 . The method of  claim 18 , wherein the nucleation layer has a thickness in a range from about 10 Å to about 200 Å.  
   
   
       20 . The method of  claim 19 , wherein the bulk tungsten deposition film has a thickness in a range from about 100 Å to about 5,000 Å.  
   
   
       21 . The method of  claim 19 , wherein the tungsten-containing compound is selected from the group consisting of tungsten hexafluoride and tungsten carbonyl.  
   
   
       22 . The method of  claim 21 , wherein exposing the substrate surface to the diborane soak for the predetermined time is in a range from about 5 seconds to about 90 seconds.  
   
   
       23 . The method of  claim 22 , wherein exposing the substrate surface to the diborane soak is at a temperature in a range from about 100° C. to about 400° C.  
   
   
       24 . The method of  claim 18 , wherein the reductant is selected from the group consisting of hydrogen, silane, disilane, trisilane, dichlorosilane, borane, diborane, derivatives thereof, and combinations thereof.  
   
   
       25 . The method of  claim 24 , wherein the tungsten-containing compound is tungsten hexafluoride and the reductant is silane.  
   
   
       26 . The method of  claim 24 , wherein the tungsten-containing compound is tungsten hexafluoride and the reductant is diborane.  
   
   
       27 . A method for forming a tungsten layer on a substrate surface, comprising: 
 positioning the substrate surface in a processing chamber;    exposing the substrate surface to a soak for a predetermined time, wherein the soak comprises a soak compound selected from the group consisting of hydrogen, borane, diborane, hydrogen, silane, disilane, trisilane, dichlorosilane, derivatives thereof and combinations thereof; and    depositing a nucleation layer in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas, wherein the reducing gas comprises a reductant different than the soak compound.    
   
   
       28 . The method of  claim 27 , wherein the reductant is selected from the group consisting of hydrogen, silane, disilane, trisilane, dichlorosilane, borane, diborane, derivatives thereof, and combinations thereof.  
   
   
       29 . The method of  claim 28 , wherein the nucleation layer is deposited by alternately pulsing tungsten hexafluoride and silane.  
   
   
       30 . The method of  claim 28 , wherein the nucleation layer is deposited by alternately pulsing tungsten hexafluoride and diborane.  
   
   
       31 . The method of  claim 30 , wherein the nucleation layer has a thickness in a range from about 10 Å to about 200 Å.  
   
   
       32 . The method of  claim 28 , wherein the tungsten-containing compound is selected from the group consisting of tungsten hexafluoride and tungsten carbonyl.  
   
   
       33 . The method of  claim 32 , wherein exposing the substrate surface to the soak for the predetermined time is in a range from about 5 seconds to about 90 seconds.  
   
   
       34 . The method of  claim 28 , further comprising forming a bulk tungsten deposition film on the nucleation layer using atomic layer deposition, chemical vapor deposition or physical vapor deposition techniques.  
   
   
       35 . The method of  claim 32 , wherein exposing the substrate surface to the soak is at a temperature in a range from about 100° C. to about 400° C.  
   
   
       36 . The method of  claim 32 , wherein the substrate surface comprises titanium nitride.

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