Inventor · disambiguated record
Dan M. Mocuta
Also filed as: MOCUTA DAN · MOCUTA DAN M · MOCUTA DAN MIHAI
25 granted patents·10 pending applications·789 citations·filing 2002–2024
96Inventor score
Top patents by PatentIndex Score
35 records- 0198US7723750B2MOSFET with super-steep retrograded islandIBM·Filed 2007·Granted May 25, 2010·124 cites·15 claims
- 0297US6916698B2High performance CMOS device structure with mid-gap metal gateIBM·Filed 2004·Granted Jul 12, 2005·139 cites·8 claims
- 0396US7071103B2Chemical treatment to retard diffusion in a semiconductor overlayerIBM·Filed 2004·Granted Jul 4, 2006·120 cites·25 claims
- 0495US6958286B2Method of preventing surface roughening during hydrogen prebake of SiGe substratesIBM·Filed 2004·Granted Oct 25, 2005·238 cites·20 claims
- 0593US6762469B2High performance CMOS device structure with mid-gap metal gateIBM·Filed 2002·Granted Jul 13, 2004·68 cites·5 claims
- 0689US10720363B2Method of forming vertical transistor deviceIMEC VZW·Filed 2018·Granted Jul 21, 2020·6 cites·19 claims
- 0789US7691698B2Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drainIBM·Filed 2006·Granted Apr 6, 2010·15 cites·20 claims
- 0887US9093275B2Multi-height multi-composition semiconductor finsIBM·Filed 2013·Granted Jul 28, 2015·6 cites·15 claims
- 0985US7528027B1Structure and method for manufacturing device with ultra thin SOI at the tip of a V-shape channelIBM·Filed 2008·Granted May 5, 2009·12 cites·20 claims
- 1081US7268049B2Structure and method for manufacturing MOSFET with super-steep retrograded islandIBM·Filed 2004·Granted Sep 11, 2007·21 cites·7 claims
- 1176US7498602B2Protecting silicon germanium sidewall with silicon for strained silicon/silicon mosfetsIBM·Filed 2006·Granted Mar 3, 2009·5 cites·18 claims
- 1275US6749684B1Method for improving CVD film quality utilizing polysilicon gettererIBM·Filed 2003·Granted Jun 15, 2004·11 cites·19 claims
- 1374US12484290B2Active area salicidation for NMOS and PMOS devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Nov 25, 2025·0 cites·15 claims
- 1472US2024276714A1DRAM Circuitry And Method Of Forming DRAM CircuitryMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1570US9443854B2FinFET with constrained source-drain epitaxial regionIBM·Filed 2015·Granted Sep 13, 2016·1 cites·12 claims
- 1669US8168971B2Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drainCHIDAMBARRAO DURESETI·Filed 2008·Granted May 1, 2012·3 cites·20 claims
- 1764US7550370B2Method of forming thin SGOI wafers with high relaxation and low stacking fault defect densityIBM·Filed 2004·Granted Jun 23, 2009·11 cites·11 claims
- 1864US7202132B2Protecting silicon germanium sidewall with silicon for strained silicon/silicon germanium MOSFETsIBM·Filed 2004·Granted Apr 10, 2007·9 cites·32 claims
- 1962US11991877B2DRAM circuitry and method of forming DRAM circuitryMICRON TECHNOLOGY INC·Filed 2021·Granted May 21, 2024·0 cites·17 claims
- 2059US9536879B2FinFET with constrained source-drain epitaxial regionIBM·Filed 2014·Granted Jan 3, 2017·0 cites·5 claims
- 2156US9673197B2FinFET with constrained source-drain epitaxial regionIBM·Filed 2016·Granted Jun 6, 2017·0 cites·5 claims
- 2253US9299780B2Constrained epitaxial source/drain regions on semiconductor-on-insulator finFET deviceIBM·Filed 2014·Granted Mar 29, 2016·0 cites·11 claims
- 2353US9252215B2Constrained epitaxial source/drain regions on semiconductor-on-insulator finFET deviceIBM·Filed 2015·Granted Feb 2, 2016·0 cites·9 claims
- 2452US2024284663A1Asymmetric transistor devicesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2552US2024064987A1Silicide transistor device and methodMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 2651US2024055523A1Thick gate oxide transistor device and methodMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 2750US2015102463A1High-k and metal filled trench-type edram capacitor with electrode depth and dimension controlIBM·Filed 2014·Application pending·0 cites
- 2849US9461050B2Self-aligned laterally extended strap for a dynamic random access memory cellGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 4, 2016·0 cites·19 claims
- 2949US2023335582A1Memory device isolation structure and methodMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 3047US9059194B2High-K and metal filled trench-type EDRAM capacitor with electrode depth and dimension controlIBM·Filed 2013·Granted Jun 16, 2015·0 cites·17 claims
- 3147US2015333087A1Multi-height multi-composition semiconductor finsIBM·Filed 2015·Application pending·0 cites
- 3245US10522552B2Method of fabricating vertical transistor deviceIMEC VZW·Filed 2018·Granted Dec 31, 2019·0 cites·15 claims
- 3344US2008179636A1N-fets with tensilely strained semiconductor channels, and method for fabricating same using buried pseudomorphic layersIBM·Filed 2007·Application pending·0 cites
- 3439US2007249112A1Differential spacer formation for a field effect transistorTOSHIBA CORP SEMICONDUCTOR COM·Filed 2006·Application pending·0 cites
- 3539US2005148162A1Method of preventing surface roughening during hydrogen pre-bake of SiGe substrates using chlorine containing gasesFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →