US2015102463A1PendingUtilityA1

High-k and metal filled trench-type edram capacitor with electrode depth and dimension control

Assignee: IBMPriority: Jan 10, 2013Filed: Dec 22, 2014Published: Apr 16, 2015
Est. expiryJan 10, 2033(~6.4 yrs left)· nominal 20-yr term from priority
H10W 42/00H10D 1/716H10D 1/047H01L 23/58H01L 28/90H01L 27/108H10B 12/37H10B 12/0387H10B 12/00
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Claims

Abstract

Partial removal of organic planarizing layer (OPL) material forms a plug of OPL material within an aperture that protects underlying material or electronic device such as a deep trench capacitor during other manufacturing processes. The OPL plug thus can absorb any differences or non-uniformity in, for example, etch rates across the chip or wafer and preserve recess dimensions previously formed. control of a lateral component of later removal of the OPL plug by etching also can increase tolerance of overlay error in forming connections and thus avoid loss in manufacturing yield.

Claims

exact text as granted — not AI-modified
1 - 17 . (canceled) 
     
     
         18 . A semiconductor wafer including
 an electronic element formed below a surface of a substrate or layer of semiconductor material, and   a conductive body of material formed within an aperture and in contact with said electronic element wherein said conductive body of material is recessed substantially uniformly at all locations on said semiconductor wafer.   
     
     
         19 . The semiconductor wafer as recited in  claim 18  wherein said electronic element is a deep trench capacitor. 
     
     
         20 . A semiconductor device including
 two electronic elements formed below a surface of a substrate or layer of semiconductor material,   two conductive bodies of material formed within respective apertures and in contact with respective ones of said two electronic elements, and   a strap connection connecting said two conductive bodies wherein a width of said strap connection corresponds to a degree of overlay error in the location of said strap connection relative to said two conductive bodies.   
     
     
         21 . The semiconductor device as recited in  claim 20  wherein said conductive bodies of material are recessed substantially uniformly at all locations of said semiconductor device. 
     
     
         22 . The semiconductor device as recited in  claim 21  wherein one of said electronic elements is a deep trench capacitor.

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