Inventor · disambiguated record
Yi-Hsuan Hsiao
Also filed as: HSIAO YI-HSUAN
34 granted patents·7 pending applications·3,361 citations·filing 2009–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD21MACRONIX INT CO LTD8LUE HANG-TING5APPLIED MATERIALS INC2HSIAO YI-HSUAN2
Top patents by PatentIndex Score
41 records- 0198US9520482B1Method of cutting metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 13, 2016·3.2k cites·20 claims
- 0298US8759899B1Integration of 3D stacked IC device with peripheral circuitsLUE HANG-TING·Filed 2013·Granted Jun 24, 2014·86 cites·8 claims
- 0397US11855085B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0497US11830926B2Semiconductor device structure with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·3 cites·20 claims
- 0594US11527443B2Residue-free metal gate cutting for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·2 cites·20 claims
- 0693US8860124B2Depletion-mode charge-trapping flash deviceLUE HANG-TING·Filed 2009·Granted Oct 14, 2014·27 cites·16 claims
- 0793US8488387B2Thermally assisted dielectric charge trapping flashLUE HANG-TING·Filed 2011·Granted Jul 16, 2013·19 cites·22 claims
- 0891US8987914B2Conductor structure and methodMACRONIX INT CO LTD·Filed 2013·Granted Mar 24, 2015·7 cites·27 claims
- 0990US2025126883A1Semiconductor Structure Cutting Process and Structures Formed TherebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1089US10867998B1Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·3 cites·20 claims
- 1187US12218130B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 1287US10460994B2Residue-free metal gate cutting for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·3 cites·20 claims
- 1387US9214351B2Memory architecture of thin film 3D arrayMACRONIX INT CO LTD·Filed 2013·Granted Dec 15, 2015·9 cites·8 claims
- 1487US2025098257A1Semiconductor device structure with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1586US12363994B2Residue-free metal gate cutting for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 1684US12166105B2Semiconductor device structure with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 1784US10461171B2Structure and formation method of semiconductor device with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·2 cites·20 claims
- 1883US2025254977A1Semiconductor structure with cutting depth controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1982US8081516B2Method and apparatus to suppress fringing field interference of charge trapping NAND memoryLEE HANG-TING·Filed 2009·Granted Dec 20, 2011·24 cites·24 claims
- 2081US12310096B2Method for fabricating semiconductor structure with cutting depth controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 2181US11915980B2Residue-free metal gate cutting for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 2277US9425191B2Memory device and manufacturing method of the sameMACRONIX INT CO LTD·Filed 2013·Granted Aug 23, 2016·4 cites·18 claims
- 2376US9252156B2Conductor structure and methodMACRONIX INT CO LTD·Filed 2015·Granted Feb 2, 2016·2 cites·20 claims
- 2475US11444080B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·0 cites·20 claims
- 2573US11721588B2Semiconductor structure with cutting depth control and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 2667US10943828B2Residue-free metal gate cutting for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·0 cites·20 claims
- 2766US11201230B2Semiconductor device structure with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 14, 2021·0 cites·20 claims
- 2866US10833077B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·0 cites·20 claims
- 2966US8547741B2Nonvolatile stacked NAND memoryLUE HANG-TING·Filed 2010·Granted Oct 1, 2013·2 cites·19 claims
- 3064US9536611B23D NAND memory using two separate SSL structures in an interlaced configuration for one bit lineMACRONIX INT CO LTD·Filed 2013·Granted Jan 3, 2017·1 cites·23 claims
- 3164US8183617B2Injection method with Schottky source/drainHSIAO YI-HSUAN·Filed 2009·Granted May 22, 2012·3 cites·11 claims
- 3263US2024306391A1Contact construction for semiconductor devices with low-dimensional materialsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3360US8304911B2Semiconductor structure and manufacturing method of the sameCHEN SHIH-HUNG·Filed 2011·Granted Nov 6, 2012·1 cites·22 claims
- 3458US11031290B2Semiconductor structure with cutting depth control and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 8, 2021·0 cites·20 claims
- 3557US2025118536A1Microwave high-density plasma for selective etchAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3654US9087825B2Semiconductor structure and method for manufacturing the sameMACRONIX INT CO LTD·Filed 2013·Granted Jul 21, 2015·0 cites·11 claims
- 3749US9536893B2Three-dimensional memory and method for manufacturing the sameMACRONIX INT CO LTD·Filed 2014·Granted Jan 3, 2017·0 cites·8 claims
- 3849US8609554B2Semiconductor structure and method for manufacturing the sameLUE HANG-TING·Filed 2011·Granted Dec 17, 2013·0 cites·11 claims
- 3942US10884432B2Aerial system and a method of controlling an aerial systemUNIV CITY HONG KONG·Filed 2018·Granted Jan 5, 2021·0 cites·24 claims
- 4041US2012220111A1Injection method with schottky source/drainHSIAO YI-HSUAN·Filed 2012·Application pending·0 cites
- 4141US2016086665A1Memory architecture of thin film 3d arrayMACRONIX INT CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →