Injection method with schottky source/drain

Abstract

An injection method for non-volatile memory cells with a Schottky source and drain is described. Carrier injection efficiency is controlled by an interface characteristic of silicide and silicon. A Schottky barrier is modified by controlling an overlap of a gate and a source/drain and by controlling implantation, activation and/or gate processes.

1 . A method of fabricating a non-volatile memory cell, the method comprising:
 providing a substrate;   performing storage layer and gate processes over the substrate;   implanting dopants into the substrate;   capping with a silicide material over the substrate; and   formatting the silicide material;   wherein a Schottky barrier is formed in the substrate.   
     
     
         2 . The method as set forth in  claim 1 , further comprising activating the dopants. 
     
     
         3 . The method as set forth in  claim 1 , comprising programming the non-volatile memory cell. 
     
     
         4 . The method as set forth in  claim 3 , wherein the programming comprises injecting hot carriers. 
     
     
         5 . The method as set forth in  claim 4 , wherein the injecting comprises one or more of injecting hot electrons and injecting hot holes. 
     
     
         6 . The method as set forth in  claim 2 , wherein the activating occurs during the formatting of the silicide material. 
     
     
         7 . The method as set forth in  claim 2 , wherein the implanting is performed after the formatting of the silicide material. 
     
     
         8 . The method as set forth in  claim 2 , wherein the activating and the formatting comprise one or more low-temperature processes. 
     
     
         9 . The method as set forth in  claim 1 , wherein the implanting is preceded by patterning an active region and formatting a spacer. 
     
     
         10 . The method as set forth in  claim 1 , wherein the implanted dopants are activated by employing a relatively low-temperature thermal process. 
     
     
         11 . The method as set forth in  claim 10 , wherein the formatting comprises performing a thermal process to format the silicide material. 
     
     
         12 . The method as set forth in  claim 1 , wherein the formatting occurs prior to activation of the implanted dopants. 
     
     
         13 . The method as set forth in  claim 12 , wherein the formatting comprises performing a thermal process to activate the implanted dopants and format the silicide material whereby the Schottky barrier is modified by the dopant implantation and thermal process. 
     
     
         14 . The method as set forth in  claim 1 , wherein the capping and formatting are performed before the implanting. 
     
     
         15 . The method as set forth in  claim 14 , wherein the capping is preceded by patterning an active region and formatting a spacer. 
     
     
         16 . The method as set forth in  claim 15 , wherein the formatting of the silicide material comprises performing a thermal process.