Inventor · disambiguated record
Natalie B. Feilchenfeld
Also filed as: FEILCHENFELD NATALIE · FEILCHENFELD NATALIE B · FEILCHENFELD NATALIE BARBARA
45 granted patents·3 pending applications·701 citations·filing 1988–2018
98Inventor score
Top patents by PatentIndex Score
48 records- 0194US7829945B2Lateral diffusion field effect transistor with asymmetric gate dielectric profileIBM·Filed 2007·Granted Nov 9, 2010·31 cites·12 claims
- 0292US5798563APolytetrafluoroethylene thin film chip carrierIBM·Filed 1997·Granted Aug 25, 1998·112 cites·22 claims
- 0391US8492866B1Isolated Zener diodeANDERSON FREDERICK G·Filed 2012·Granted Jul 23, 2013·15 cites·23 claims
- 0490US10050115B2Tapered gate oxide in LDMOS devicesIBM·Filed 2014·Granted Aug 14, 2018·11 cites·10 claims
- 0590US9786606B2Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related methodGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 10, 2017·9 cites·11 claims
- 0689US6156484AGray scale etching for thin flexible interposerIBM·Filed 1998·Granted Dec 5, 2000·78 cites·12 claims
- 0789US5847324AHigh performance electrical cableIBM·Filed 1996·Granted Dec 8, 1998·65 cites·8 claims
- 0888US10535551B2Lateral PiN diodes and schottky diodesGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 14, 2020·4 cites·18 claims
- 0987US7956412B2Lateral diffusion field effect transistor with a trench field plateIBM·Filed 2007·Granted Jun 7, 2011·14 cites·14 claims
- 1085US9799652B1Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structureGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 24, 2017·3 cites·20 claims
- 1183US9893157B1Structures with contact trenches and isolation trenchesGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 13, 2018·4 cites·20 claims
- 1283US8901710B2Interdigitated capacitors with a zero quadratic voltage coefficient of capacitance or zero linear temperature coefficient of capacitanceIBM·Filed 2013·Granted Dec 2, 2014·7 cites·20 claims
- 1382US5759737AMethod of making a component carrierIBM·Filed 1996·Granted Jun 2, 1998·62 cites·5 claims
- 1481US7892910B2Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integrationIBM·Filed 2007·Granted Feb 22, 2011·7 cites·20 claims
- 1581US6809024B1Method to fabricate high-performance NPN transistors in a BiCMOS processIBM·Filed 2003·Granted Oct 26, 2004·24 cites·11 claims
- 1680US6150726AComponent carrier with raised bonding sitesIBM·Filed 1998·Granted Nov 21, 2000·51 cites·6 claims
- 1779US9768028B1Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structureGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 19, 2017·2 cites·19 claims
- 1879US7904868B2Structures including means for lateral current carrying capability improvement in semiconductor devicesIBM·Filed 2007·Granted Mar 8, 2011·8 cites·7 claims
- 1977US6906401B2Method to fabricate high-performance NPN transistors in a BiCMOS processIBM·Filed 2004·Granted Jun 14, 2005·19 cites·9 claims
- 2075US6013355ATesting laminates with x-ray moire interferometryIBM·Filed 1996·Granted Jan 11, 2000·52 cites·8 claims
- 2174US7453151B2Methods for lateral current carrying capability improvement in semiconductor devicesIBM·Filed 2006·Granted Nov 18, 2008·5 cites·6 claims
- 2274US6259037B1Polytetrafluoroethylene thin film chip carrierIBM·Filed 1999·Granted Jul 10, 2001·35 cites·12 claims
- 2373US10446644B2Device structures for a silicon-on-insulator substrate with a high-resistance handle waferGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 15, 2019·2 cites·17 claims
- 2473US9059276B2High voltage laterally diffused metal oxide semiconductorIBM·Filed 2013·Granted Jun 16, 2015·3 cites·19 claims
- 2573US8236662B2Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integrationFEILCHENFELD NATALIE B·Filed 2010·Granted Aug 7, 2012·3 cites·20 claims
- 2668US7728372B2Method and structure for creation of a metal insulator metal capacitorIBM·Filed 2006·Granted Jun 1, 2010·3 cites·8 claims
- 2767US7886240B2Modifying layout of IC based on function of interconnect and related circuit and design structureIBM·Filed 2008·Granted Feb 8, 2011·3 cites·17 claims
- 2866US6006428APolytetrafluoroethylene thin film chip carrierIBM·Filed 1998·Granted Dec 28, 1999·25 cites·7 claims
- 2964US7301752B2Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmaskIBM·Filed 2004·Granted Nov 27, 2007·10 cites·12 claims
- 3062US8114750B2Lateral diffusion field effect transistor with drain region self-aligned to gate electrodeFEILCHENFELD NATALIE B·Filed 2008·Granted Feb 14, 2012·1 cites·12 claims
- 3161US9324632B2Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related methodGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 26, 2016·1 cites·10 claims
- 3261US4883744AForming a polymide pattern on a substrateIBM·Filed 1988·Granted Nov 28, 1989·14 cites·21 claims
- 3356US9947573B2Lateral PiN diodes and schottky diodesIBM·Filed 2014·Granted Apr 17, 2018·0 cites·14 claims
- 3456US7868423B2Optimized device isolationIBM·Filed 2008·Granted Jan 11, 2011·1 cites·19 claims
- 3554US8227318B2Integration of multiple gate oxides with shallow trench isolation methods to minimize divot formationLEVY MAX·Filed 2009·Granted Jul 24, 2012·1 cites·10 claims
- 3651US8796108B2Isolated zener diode, an integrated circuit incorporating multiple instances of the zener diode, a method of forming the zener diode and a design structure for the zener diodeIBM·Filed 2013·Granted Aug 5, 2014·0 cites·19 claims
- 3751US7511940B2Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmaskIBM·Filed 2007·Granted Mar 31, 2009·0 cites·13 claims
- 3851US2008308940A1Lateral current carrying capability improvement in semiconductor devicesFEILCHENFELD NATALIE BARBARA·Filed 2008·Application pending·0 cites
- 3950US9202869B2Self-aligned bipolar junction transistor having self-planarizing isolation raised base structuresIBM·Filed 2013·Granted Dec 1, 2015·0 cites·17 claims
- 4050US8525293B2Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integrationFEILCHENFELD NATALIE B·Filed 2012·Granted Sep 3, 2013·0 cites·20 claims
- 4150US2014327084A1Dual shallow trench isolation (sti) field effect transistor (fet) and methods of formingIBM·Filed 2013·Application pending·0 cites
- 4249US9595579B2Dual shallow trench isolation (STI) structure for field effect transistor (FET)GLOBALFOUNDRIES INC·Filed 2015·Granted Mar 14, 2017·0 cites·9 claims
- 4349US2016043202A1Self-aligned bipolar junction transistor having self-planarizing isolation raised base structuresGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 4448US8946013B2Lateral diffusion field effect transistor with drain region self-aligned to gate electrodeFEILCHENFELD NATALIE B·Filed 2012·Granted Feb 3, 2015·0 cites·17 claims
- 4540US8227849B2Method and structure for creation of a metal insulator metal capacitorESHUN EBENEZER E·Filed 2010·Granted Jul 24, 2012·0 cites·10 claims
- 4636US6547974B1Method of producing fine-line circuit boards using chemical polishingIBM·Filed 1995·Granted Apr 15, 2003·6 cites·9 claims
- 4735US5993579AHigh performance electrical cable and method of manufactureIBM·Filed 1997·Granted Nov 30, 1999·4 cites·6 claims
- 4832US5489500AFlexible strip structure for a parallel processor and method of fabricating the flexible stripIBM·Filed 1993·Granted Feb 6, 1996·6 cites·3 claims
Join the waitlist — get patent alerts
Get an alert when Natalie B. Feilchenfeld files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →