Inventor · disambiguated record
Yo-Sep Min
Also filed as: MIN YO-SEP
32 granted patents·10 pending applications·802 citations·filing 2001–2015
97Inventor score
Top patents by PatentIndex Score
42 records- 0198US7005391B2Method of manufacturing inorganic nanotubeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 28, 2006·521 cites·11 claims
- 0295US9863039B2MoS2 thin film and method for manufacturing sameUNIV KONKUK IND COOP CORP·Filed 2013·Granted Jan 9, 2018·10 cites·8 claims
- 0393US7892917B2Method for forming bismuth titanium silicon oxide thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 22, 2011·18 cites·7 claims
- 0491US7402492B2Method of manufacturing a memory device having improved erasing characteristicsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 22, 2008·17 cites·10 claims
- 0589US7135207B2Chemical vapor deposition method using alcohol for forming metal oxide thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 14, 2006·36 cites·9 claims
- 0684US7381983B2N-type carbon nanotube field effect transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 3, 2008·8 cites·4 claims
- 0783US7767140B2Method for manufacturing zinc oxide nanowires and device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 3, 2010·5 cites·3 claims
- 0883US6669990B2Atomic layer deposition method using a novel group IV metal precursorSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 30, 2003·20 cites·4 claims
- 0982US6752869B2Atomic layer deposition using organometallic complex with β-diketone ligandSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 22, 2004·27 cites·6 claims
- 1081US7767502B2Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 3, 2010·8 cites·17 claims
- 1179US7705347B2N-type carbon nanotube field effect transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 27, 2010·5 cites·13 claims
- 1277US6911402B2Deposition method of a dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 28, 2005·19 cites·15 claims
- 1375US7132714B2Vertical carbon nanotube-field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 7, 2006·19 cites·13 claims
- 1475US7020064B2Rewritable data storage using carbonaceous material and writing/reading method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Mar 28, 2006·17 cites·16 claims
- 1574US7709377B2Thin film including multi components and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 4, 2010·1 cites·19 claims
- 1673US7030450B2Precursor for hafnium oxide layer and method for forming halnium oxide film using the precursorSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 18, 2006·12 cites·11 claims
- 1772US8143660B2Method for manufacturing oxide film having high dielectric constant, capacitor having dielectric film formed using the method, and method for manufacturing the sameLEE JUNG-HYUN·Filed 2004·Granted Mar 27, 2012·17 cites·1 claims
- 1871US7379322B2Amorphous high-k thin film and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 27, 2008·3 cites·9 claims
- 1970US7374994B2Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 20, 2008·2 cites·9 claims
- 2068US7604790B2Method of removing carbonaceous impurities in carbon nanotubesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 20, 2009·1 cites·11 claims
- 2166US7799307B2Method of growing single-walled carbon nanotubesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 21, 2010·3 cites·8 claims
- 2266US6919597B2Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 19, 2005·7 cites·6 claims
- 2364US7399716B2Precursor for hafnium oxide layer and method for forming hafnium oxide film using the precursorSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 15, 2008·1 cites·7 claims
- 2463US7176488B2Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 13, 2007·9 cites·6 claims
- 2562US6689427B2Group IV metal precursors and a method of chemical vapor deposition using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 10, 2004·8 cites·7 claims
- 2658US7795159B2Charge trap layer for a charge trap semiconductor memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 14, 2010·1 cites·11 claims
- 2758US7105401B2Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 12, 2006·4 cites·3 claims
- 2855US8294348B2Field emission electrode, method of manufacturing the same, and field emission device comprising the sameMIN YO-SEP·Filed 2007·Granted Oct 23, 2012·0 cites·16 claims
- 2952US2006289921A1Method of manufacturing a capacitor for semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3051US2010109074A1Gate structure, semiconductor memory device having the gate structure and methods of fabricating the sameSEOL KWANG-SOO·Filed 2009·Application pending·0 cites
- 3150US8272914B2Method of manufacturing field emission electrode having carbon nanotubes with conductive particles attached to external wallsMIN YO-SEP·Filed 2011·Granted Sep 25, 2012·0 cites·8 claims
- 3248US2007236133A1Field emission electrode, field emission device having the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3347US2007108505A1Gate structure, semiconductor memory device having the gate structure and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3446US7501680B2Memory device having nanocrystals in memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 10, 2009·2 cites·13 claims
- 3545US2002168553A1Thin film including multi components and method of forming the sameFiled 2002·Application pending·0 cites
- 3644US7501191B2Amorphous dielectric thin film and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 10, 2009·0 cites·29 claims
- 3743US7713509B2Method of forming nitrogen-doped single-walled carbon nanotubesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 11, 2010·1 cites·10 claims
- 3842US2006216636A1Catalytic resist including metal precursor compound and method of patterning catalyst particles using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3942US2007154623A1Method for manufacturing single-walled carbon nanotube on glassMIN YO-SEP·Filed 2006·Application pending·0 cites
- 4042US2003160276A1Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the sameFiled 2003·Application pending·0 cites
- 4138US2006255399A1Nonvolatile memory device having a plurality of trapping filmsKIM JU-HYUNG·Filed 2006·Application pending·0 cites
- 4237US2015267959A1Gas barrier film, refrigerator having the same and method of manufacturing gas barrier filmSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →