Method of manufacturing a capacitor for semiconductor device

Abstract

A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor, wherein the capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer layer disposed between the lower electrode and the thin dielectric layer, the buffer layer including a metal oxide of Group 3, 4, or 13. In the capacitor of the present invention, oxidization of the lower electrode may be suppressed, and excellent characteristics of the thin dielectric layer may be maintained.

1 - 4 . (canceled)  
   
   
       5 . A method of fabricating a capacitor for use in a semiconductor device, the method comprising: 
 forming a buffer layer on a lower electrode of a platinum group metal by performing an atomic layer deposition (ALD) process using a precursor for the buffer layer;    forming a thin dielectric layer by performing the ALD process using a precursor for a thin dielectric layer on the buffer layer; and    forming an upper electrode of a platinum group metal on the thin dielectric layer.    
   
   
       6 . The method as claimed in  claim 5 , wherein the precursor for the buffer layer is comprised of Ti(i-OPr) 2 (tmhd) 2  (where tmhd indicates tetramethylheptanedionate, and i-OPr indicates isopropoxy), Al(CH 3 ) 3  or Hf(OBu) 4  (where n-OBu indicates n-butoxide).  
   
   
       7 . The method as claimed in  claim 5 , wherein the ALD process for forming the buffer layer is performed at a temperature of between about 200-500° C.  
   
   
       8 . The method as claimed in  claim 5 , wherein the precursor for the thin dielectric layer is comprised of at least one selected from the group consisting of Sr(tmdh) 2 , Sr(methd) 2 , TiO(tmhd) 2 , and Ti(i-OPr) 2 (tmhd) 2 , (where tmhd indicates tetramethylheptanedionate, methd indicates methoxyethoxy tetramethylheptanedionate and i-OPr indicates isopropoxy).  
   
   
       9 - 16 . (canceled)  
   
   
       17 . The method as claimed in  claim 5 , wherein forming the buffer layer includes using O 3  as an oxidizer.  
   
   
       18 . The method as claimed in  claim 17 , wherein the ALD process for forming the buffer layer is performed at a temperature of between about 200-500° C.  
   
   
       19 . The method as claimed in  claim 18 , wherein the precursor for the buffer layer is comprised of Ti(i-OPr) 2 (tmhd) 2  (where tmhd indicates tetramethylheptanedionate, and i-OPr indicates isopropoxy), Al(CH 3 ) 3  or Hf(OBu) 4  (where n-OBu indicates n-butoxide).  
   
   
       20 . The method as claimed in  claim 5 , wherein forming the thin dielectric layer includes using O 3  as an oxidizer.  
   
   
       21 . The method as claimed in  claim 20 , wherein forming the thin dielectric layer is performed at a temperature between about 300-500° C.  
   
   
       22 . The method as claimed in  claim 21 , wherein the precursor for the thin dielectric layer is comprised of at least one selected from the group consisting of Sr(tmdh) 2 , Sr(methd) 2 , TiO(tmhd) 2 , and Ti(i-OPr) 2 (tmhd) 2 , (where tmhd indicates tetramethylheptanedionate, methd indicates methoxyethoxy tetramethylheptanedionate and i-OPr indicates isopropoxy).