Thin film including multi components and method of forming the same

Abstract

A thin film including multi components and a method of forming the thin film are provided, wherein a method according to an embodiment of the present invention, a substrate is loaded into a reaction chamber. A unit material layer is formed on the substrate. The unit material layer is a mosaic atomic layer composed of two kinds of precursors containing components constituting the thin film. The inside of the reaction chamber is purged, and the MAL is chemically changed. The method of forming the thin film of the present invention requires fewer steps than a conventional method while retaining the advantages of the conventional method, thereby allowing a superior thin film yield in the present invention than previously obtainable.

What is claimed is:  
     
         1 . A method of forming a thin film including multi components, the method comprising: 
 loading a substrate into a reaction chamber, forming a unit material layer, which is a mosaic atomic layer (MAL) composed of two kinds of precursors containing components constituting a thin film, on the substrate;    purging the inside of the reaction chamber; and    chemically changing the MAL.    
     
     
         2 . The method as claimed in  claim 1 , wherein the MAL is formed by supplying the two kinds of precursors at the same time.  
     
     
         3 . The method as claimed in  claim 1 , wherein the MAL is formed by sequentially supplying the two kinds of precursors by a time-sharing method.  
     
     
         4 . The method as claimed in  claim 3 , further comprising: 
 supplying first precursors selected from the two kinds of precursors into the reaction chamber;    firstly purging the reaction chamber; and    supplying second precursors selected from the two kinds of precursors into the reaction chamber.    
     
     
         5 . The method as claimed in  claim 3 , wherein each of the first and second precursors is supplied in an amount less than that sufficient for forming an atomic layer on the entire surface of the substrate.  
     
     
         6 . The method as claimed in  claim 4 , further comprising: 
 secondly purging the reaction chamber; and    supplying third precursors selected from the two kinds of precursors into the reaction chamber.    
     
     
         7 . The method as claimed in  claim 1 , wherein the MAL is a double MAL composed of first and second MALs.  
     
     
         8 . The method as claimed in  claim 7 , wherein the first MAL is chemically changed before the second MAL is formed on the first MAL.  
     
     
         9 . The method as claimed in  claim 7 , wherein the first MAL is formed of first and second precursors selected from the two kinds of precursors.  
     
     
         10 . The method as claimed in  claim 8 , wherein the first MAL is formed of first and second precursors selected from the two kinds of precursors.  
     
     
         11 . The method as claimed in  claim 9 , wherein the second MAL is formed of first and third precursors selected from the two kinds of precursors.  
     
     
         12 . The method as claimed in  claim 10 , wherein the second MAL is formed of first and third precursors selected from the two kinds of precursors.  
     
     
         13 . The method as claimed in  claim 9 , wherein the second MAL is formed of first and second precursors, of different compositions.  
     
     
         14 . The method as claimed in  claim 10 , wherein the second MAL is formed of first and second precursors, of different compositions.  
     
     
         15 . The method as claimed in  claim 9 , wherein the first MAL is formed by supplying the first and second precursors at the same time.  
     
     
         16 . The method as claimed in  claim 10 , wherein the first MAL is formed by supplying the first and second precursors at the same time.  
     
     
         17 . The method as claimed in  claim 9 , wherein the first MAL is formed by sequentially supplying the first and second precursors by a time-sharing method.  
     
     
         18 . The method as claimed in  claim 10 , wherein the first MAL is formed by sequentially supplying the first and second precursors by a time-sharing method.  
     
     
         19 . The method as claimed in  claim 11 , wherein the second MAL is formed by supplying the first and third precursors at the same time.  
     
     
         20 . The method as claimed in  claim 12 , wherein the second MAL is formed by supplying the first and third precursors at the same time.  
     
     
         21 . The method as claimed in  claim 11 , wherein the second MALs are formed by sequentially supplying the first and third precursors by a time-sharing method.  
     
     
         22 . The method as claimed in  claim 12 , wherein the second MALs are formed by sequentially supplying the first and third precursors by a time-sharing method.  
     
     
         23 . The method as claimed in  claim 1 , wherein in chemically changing the MAL, the MAL is oxidized, nitrified, or boronized.  
     
     
         24 . The method as claimed in  claim 23 , wherein the MAL is oxidized using plasma or ultraviolet-ozone using either H 2 O, O 2 , O 3 , or H 2 O 2  as a source of oxygen.  
     
     
         25 . The method as claimed in  claim 24 , wherein the source of oxygen is purged using an inert gas, wherein DC-bias is applied to the substrate to make the inert gas into plasma so as to form inert gaseous plasma which is used to remove by-products adsorbed on the surface of the MAL.  
     
     
         26 . The method as claimed in  claim 24 , wherein the plasma is formed using radio frequency (RF) or microwave energy.  
     
     
         27 . The method as claimed in  claim 8 , wherein the first MAL is chemically changed by either an oxidation method, a nitrification method, or a boronization method.  
     
     
         28 . The method as claimed in  claim 4 , wherein the second precursors are additionally supplied after the second precursors are supplied.  
     
     
         29 . The method as claimed in  claim 6 , wherein the third precursors are additionally supplied after the third precursors are supplied.  
     
     
         30 . The method as claimed in  claim 1 , wherein the thin film is either an oxide layer, a nitride layer, or a boride layer.  
     
     
         31 . The method as claimed in  claim 1 , wherein the thin film is either an STO layer, a PZT layer, a BST layer , a YBCO layer , an SBTO layer, an HfSiON layer, a ZrSiO layer, a ZrHfO layer, a LaCoO layer, or a TiSiN layer.  
     
     
         32 . A method as claimed in forming a thin film including multi components, the method comprising: 
 loading a substrate into a reaction chamber and sequentially forming a mosaic atomic layer (MAL) composed of two kinds of precursors containing components constituting the thin film and a non-mosaic atomic layer on the MAL to form a unit material layer constituting the thin film on the substrate;    purging the inside of the reaction chamber; and    chemically changing the MAL.    
     
     
         33 . The method as claimed in  claim 32 , wherein the MAL is formed by supplying the two kinds of precursors at the same time.  
     
     
         34 . The method as claimed in  claim 32 , wherein the MAL is formed by supplying the two kinds of precursors by a time-sharing method.  
     
     
         35 . The method as claimed in  claim 34 , further comprising: 
 supplying first precursors selected from the two kinds of precursors into the reaction chamber;    firstly purging the reaction chamber; and    supplying second precursors selected from the two kinds of precursors into the reaction chamber.    
     
     
         36 . The method as claimed in  claim 35 , further comprising: 
 secondly purging the reaction chamber; and    supplying third precursors selected from the two kinds of precursors into the reaction chamber.    
     
     
         37 . The method as claimed in  claim 35 , wherein the second precursors are additionally supplied after the second precursors are supplied.  
     
     
         38 . The method as claimed in  claim 36 , wherein the third precursors are additionally supplied after the third precursors are supplied.  
     
     
         39 . The method as claimed in  claim 32 , wherein the thin film is either an oxide layer, a nitride layer, or a boride layer.  
     
     
         40 . The method as claimed in  claim 32 , wherein the thin film is one selected from the group consisting of an STO layer, a PZT layer, a BST layer, a YBCO layer, an SBTO layer, an HfSiON layer, a ZrSiO layer, a ZrHfO layer, a LaCoO layer, and a TiSiN layer.  
     
     
         41 . The method as claimed in  claim 32 , wherein in chemically changing the MAL, the MAL is oxidized, nitrified, or boronized.  
     
     
         42 . The method as claimed in  claim 41 , wherein the MAL is oxidized using plasma or ultraviolet-ozone using either O 2 , O 3 , H 2 O, or H 2 O 2  as a source of oxygen.  
     
     
         43 . The method as claimed in  claim 42 , wherein the plasma is formed using radio frequency (RF) or microwave energy.  
     
     
         44 . The method as claimed in  claim 42 , wherein the source of oxygen is purged using an inert gas, wherein the inert gas is made into plasma to form inter gaseous plasma which is used to remove by-products adsorbed on the surface of the MAL.  
     
     
         45 . The method as claimed in  claim 32 , wherein when the MAL is formed by supplying the two kinds of precursors by a time-sharing method, each of the two kinds of precursors is supplied in an amount less than that sufficient for covering the entire surface of the substrate.  
     
     
         46 . A thin film including multi components, containing at least two components, wherein the thin film is composed of a plurality of unit material layers and each of the unit material layers is an MAL composed of different precursors related to the components.  
     
     
         47 . The thin film including multi components as claimed in  claim 46 , wherein the MALs are double MALs which are composed of first and second MALs.  
     
     
         48 . The thin film including multi components as claimed in  claim 47 , wherein the first and second MALs are formed of the same precursors, which have a different composition ratio for each of the first and second MALs.  
     
     
         49 . The thin film including multi components as claimed in  claim 47 , wherein the first MAL is composed of first and second precursors selected from the different precursors.  
     
     
         50 . The thin film including multi components as claimed in  claim 49 , wherein the second MAL is composed of the first precursors and third precursors selected from the different precursors.  
     
     
         51 . The thin film including multi components as claimed in  claim 46 , wherein the thin film is either an oxide layer, a nitride layer, or a boride layer.  
     
     
         52 . The thin film including multi components as claimed in  claim 46 , wherein the thin film is one selected from the group consisting of an STO layer, a PZT layer, a BST layer, a YBCO layer, an SBTO layer, an HfSiON layer, a ZrSiO layer, a ZrHfO layer, a LaCoO layer, and a TiSiN layer.  
     
     
         53 . A thin film including multi components, containing at least two components, wherein the thin film is composed of a plurality of unit material layers and each of the unit material layers is composed of an MAL, wherein each MAL is composed of two precursors selected from different precursors related to the components, and a non-mosaic atomic layer composed of any precursor selected from the different precursors.  
     
     
         54 . The thin film including multi components as claimed in  claim 53 , wherein the non-mosaic atomic layer is formed on the MAL.  
     
     
         55 . The thin film including multi components as claimed in  claim 53 , wherein the MAL is formed on the non-mosaic atomic layer.  
     
     
         56 . The thin film including multi components as claimed in  claim 53 , wherein the MAL is a double layer.  
     
     
         57 . The thin film including multi components as claimed in  claim 54 , wherein the MAL is a double layer.  
     
     
         58 . The thin film including multi components as claimed in  claim 55 , wherein the MAL is a double layer.  
     
     
         59 . The thin film including multi components of  claim 56 , wherein the MAL is composed of a first MAL composed of all of the different precursors and a second MAL composed of two precursors selected from the different precursors.  
     
     
         60 . The thin film including multi components of  claim 57 , wherein the MAL is composed of a first MAL composed of all of the different precursors and a second MAL composed of two precursors selected from the different precursors.  
     
     
         61 . The thin film including multi components of  claim 58 , wherein the MAL is composed of a first MAL composed of all of the different precursors and a second MAL composed of two precursors selected from the different precursors.  
     
     
         62 . The thin film including multi components of  claim 56 , wherein the MAL is composed of a first MAL composed of all of the different precursors.  
     
     
         63 . The thin film including multi components of  claim 57 , wherein the MAL is composed of a first MAL composed of all of the different precursors.  
     
     
         64 . The thin film including multi components of  claim 58 , wherein the MAL is composed of a first MAL composed of all of the different precursors.  
     
     
         65 . The thin film including multi components of  claim 56 , wherein the double layer is composed of the same precursors, which have a different composition ratio for each of layers in the double layer.  
     
     
         66 . The thin film including multi components of  claim 57 , wherein the double layer is composed of the same precursors, which have a different composition ratio for each of layers in the double layer.  
     
     
         67 . The thin film including multi components of  claim 58 , wherein the double layer is composed of the same precursors, which have a different composition ratio for each of layers in the double layer.  
     
     
         68 . The thin film including multi components of  claim 56 , wherein the double layer is composed of a first MAL, composed of first and second precursors selected from the different precursors, and a second MAL formed on the first MAL, composed of first and third precursors selected from the different precursors.  
     
     
         69 . The thin film including multi components of  claim 57 , wherein the double layer is composed of a first MAL, composed of first and second precursors selected from the different precursors, and a second MAL formed on the first MAL, composed of first and third precursors selected from the different precursors.  
     
     
         70 . The thin film including multi components of  claim 58 , wherein the double layer is composed of a first MAL, composed of first and second precursors selected from the different precursors, and a second MAL formed on the first MAL, composed of first and third precursors selected from the different precursors.  
     
     
         71 . The thin film including multi components of  claim 53 , wherein the thin film is either an oxide layer, a nitride layer, or a boride layer.  
     
     
         72 . The thin film including multi components of  claim 53 , wherein the thin film is one selected from the group consisting of an STO layer, a PZT layer, a BST layer, a YBCO layer, an SBTO layer, an HfSiON layer, a ZrSiO layer, a ZrHfO layer, a LaCoO layer, and a TiSiN layer.