Inventor · disambiguated record
Songkram Srivathanakul
Also filed as: SRIVATHANAKUL SONGKRAM · SRIVATHANAKUL SONGKRAM SONNY
11 granted patents·6 pending applications·33 citations·filing 2012–2024
87Inventor score
Top patents by PatentIndex Score
17 records- 0193US9330982B1Semiconductor device with diffusion barrier film and method of manufacturing the sameGLOBALFOUNDRIES INC·Filed 2015·Granted May 3, 2016·11 cites·20 claims
- 0284US9793169B1Methods for forming mask layers using a flowable carbon-containing silicon dioxide materialGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 17, 2017·3 cites·20 claims
- 0382US9245979B2FinFET semiconductor devices with local isolation features and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 26, 2016·6 cites·20 claims
- 0477US9905460B2Methods of self-forming barrier formation in metal interconnection applicationsGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 27, 2018·3 cites·16 claims
- 0577US8940650B2Methods for fabricating integrated circuits utilizing silicon nitride layersGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 27, 2015·4 cites·19 claims
- 0676US8716150B1Method of forming a low-K dielectric filmGLOBALFOUNDRIES INC·Filed 2013·Granted May 6, 2014·3 cites·20 claims
- 0766US9318440B2Formation of carbon-rich contact liner materialGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 19, 2016·1 cites·20 claims
- 0864US9130019B2Formation of carbon-rich contact liner materialGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 8, 2015·1 cites·20 claims
- 0961US9093560B2Gate height uniformity in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 28, 2015·1 cites·14 claims
- 1057US2024363354A1Low-temperature selective epitaxy contact approachAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1154US2024363357A1Methods for bow compensation using tensile nitrideAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1251US8900940B2Reducing gate height variance during semiconductor device formationGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 2, 2014·0 cites·20 claims
- 1350US2018005893A1Methods for forming mask layers using a flowable carbon-containing silicon dioxide materialGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 1449US9349814B2Gate height uniformity in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted May 24, 2016·0 cites·20 claims
- 1543US2020111704A1Methods of forming stress liners using atomic layer deposition to form gapfill seamsGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
- 1641US2014175562A1Spacer divot sealing method and semiconductor device incorporating sameGLOBALFOUNDRIES INC·Filed 2012·Application pending·0 cites
- 1735US2017338325A1Method, apparatus and system for providing nitride cap layer in replacement metal gate structureGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →