Inventor · disambiguated record
Chiahsun Tseng
Also filed as: TSENG CHIAHSUN
53 granted patents·11 pending applications·147 citations·filing 2012–2019
98Inventor score
Top patents by PatentIndex Score
64 records- 0196US9368350B1Tone inverted directed self-assembly (DSA) fin patterningIBM·Filed 2015·Granted Jun 14, 2016·12 cites·20 claims
- 0295US9324830B2Self-aligned contact process enabled by low temperatureIBM·Filed 2014·Granted Apr 26, 2016·12 cites·19 claims
- 0394US9093326B2Electrically isolated SiGe fin formation by local oxidationIBM·Filed 2013·Granted Jul 28, 2015·14 cites·18 claims
- 0494US9064813B2Trench patterning with block first sidewall image transferIBM·Filed 2013·Granted Jun 23, 2015·14 cites·17 claims
- 0592US8951850B1FinFET formed over dielectricIBM·Filed 2013·Granted Feb 10, 2015·11 cites·15 claims
- 0691US9634117B2Self-aligned contact process enabled by low temperatureIBM·Filed 2016·Granted Apr 25, 2017·5 cites·20 claims
- 0791US9515089B1Bulk fin formation with vertical fin sidewall profileIBM·Filed 2015·Granted Dec 6, 2016·6 cites·12 claims
- 0890US10037944B2Self-aligned contact process enabled by low temperatureIBM·Filed 2017·Granted Jul 31, 2018·4 cites·20 claims
- 0990US9252243B2Gate structure integration scheme for fin field effect transistorsIBM·Filed 2014·Granted Feb 2, 2016·7 cites·15 claims
- 1090US9099401B2Sidewall image transfer with a spin-on hardmaskIBM·Filed 2013·Granted Aug 4, 2015·8 cites·4 claims
- 1190US9041094B2Finfet formed over dielectricIBM·Filed 2013·Granted May 26, 2015·9 cites·15 claims
- 1287US9064901B1Fin density control of multigate devices through sidewall image transfer processesIBM·Filed 2013·Granted Jun 23, 2015·5 cites·17 claims
- 1386US9627263B1Stop layer through ion implantation for etch stopIBM·Filed 2015·Granted Apr 18, 2017·4 cites·6 claims
- 1486US9059002B2Non-merged epitaxially grown MOSFET devicesIBM·Filed 2013·Granted Jun 16, 2015·4 cites·15 claims
- 1585US9385123B2STI region for small fin pitch in FinFET devicesIBM·Filed 2014·Granted Jul 5, 2016·6 cites·8 claims
- 1683US8872244B1Contact structure employing a self-aligned gate capIBM·Filed 2013·Granted Oct 28, 2014·5 cites·9 claims
- 1781US9728419B2Fin density control of multigate devices through sidewall image transfer processesIBM·Filed 2015·Granted Aug 8, 2017·2 cites·20 claims
- 1879US8957478B2Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layerIBM·Filed 2013·Granted Feb 17, 2015·4 cites·3 claims
- 1977US9245788B2Non-bridging contact via structures in proximityTSENG CHIAHSUN·Filed 2012·Granted Jan 26, 2016·3 cites·13 claims
- 2077US9053965B2Partially isolated Fin-shaped field effect transistorsIBM·Filed 2013·Granted Jun 9, 2015·3 cites·9 claims
- 2174US9293345B2Sidewall image transfer with a spin-on hardmaskGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 22, 2016·2 cites·16 claims
- 2271US8796812B2Self-aligned trench over finTSENG CHIAHSUN·Filed 2012·Granted Aug 5, 2014·2 cites·20 claims
- 2368US9646929B2Making an efuseGLOBALFOUNDRIES INC·Filed 2013·Granted May 9, 2017·2 cites·11 claims
- 2467US9508713B2Densely spaced fins for semiconductor fin field effect transistorsIBM·Filed 2014·Granted Nov 29, 2016·1 cites·10 claims
- 2567US9076733B2Self-aligned trench over finIBM·Filed 2014·Granted Jul 7, 2015·1 cites·9 claims
- 2666US9985030B2FinFET semiconductor device having integrated SiGe finIBM·Filed 2014·Granted May 29, 2018·1 cites·17 claims
- 2764US10566454B2Self-aligned contact process enabled by low temperatureIBM·Filed 2018·Granted Feb 18, 2020·0 cites·20 claims
- 2862US10529858B2FinFET with merge-free finsGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 7, 2020·0 cites·10 claims
- 2960US10170327B2Fin density control of multigate devices through sidewall image transfer processesIBM·Filed 2017·Granted Jan 1, 2019·0 cites·19 claims
- 3060US9991258B2FinFETs with non-merged epitaxial S/D extensions having a SiGe seed layer on insulatorIBM·Filed 2016·Granted Jun 5, 2018·0 cites·6 claims
- 3160US9396957B2Non-lithographic line pattern formationIBM·Filed 2014·Granted Jul 19, 2016·0 cites·18 claims
- 3258US10217696B2Non-bridging contact via structures in proximityIBM·Filed 2017·Granted Feb 26, 2019·0 cites·10 claims
- 3358US9484440B2Methods for forming FinFETs with non-merged epitaxial fin extensionsIBM·Filed 2015·Granted Nov 1, 2016·0 cites·8 claims
- 3458US9330962B2Non-lithographic hole pattern formationIBM·Filed 2014·Granted May 3, 2016·0 cites·20 claims
- 3557US10020303B2Methods for forming FinFETs having epitaxial Si S/D extensions with flat top surfaces on a SiGe seed layerIBM·Filed 2015·Granted Jul 10, 2018·0 cites·7 claims
- 3657US9997367B2Non-lithographic line pattern formationIBM·Filed 2016·Granted Jun 12, 2018·0 cites·14 claims
- 3757US9991255B2FinFETs with non-merged epitaxial S/D extensions on a seed layer and having flat top surfacesIBM·Filed 2015·Granted Jun 5, 2018·0 cites·11 claims
- 3857US9583585B2Gate structure integration scheme for fin field effect transistorsIBM·Filed 2015·Granted Feb 28, 2017·0 cites·20 claims
- 3957US9391155B2Gate structure integration scheme for fin field effect transistorsIBM·Filed 2015·Granted Jul 12, 2016·0 cites·20 claims
- 4055US10170471B2Bulk fin formation with vertical fin sidewall profileIBM·Filed 2016·Granted Jan 1, 2019·0 cites·9 claims
- 4155US2015140762A1Finfet with merge-free finsIBM·Filed 2015·Application pending·0 cites
- 4255US2015144886A1Finfet with merge-free finsIBM·Filed 2015·Application pending·0 cites
- 4355US2019206864A1StoplayerIBM·Filed 2019·Application pending·0 cites
- 4455US2015031201A1Trench patterning with block first sidewall image transferIBM·Filed 2014·Application pending·0 cites
- 4554US9941191B2Non-bridging contact via structures in proximityIBM·Filed 2015·Granted Apr 10, 2018·0 cites·18 claims
- 4654US9543407B2Low-K spacer for RMG finFET formationIBM·Filed 2014·Granted Jan 10, 2017·0 cites·13 claims
- 4754US8969213B2Non-lithographic line pattern formationTSENG CHIAHSUN·Filed 2012·Granted Mar 3, 2015·0 cites·20 claims
- 4852US9728534B2Densely spaced fins for semiconductor fin field effect transistorsIBM·Filed 2015·Granted Aug 8, 2017·0 cites·6 claims
- 4952US8969189B2Contact structure employing a self-aligned gate capIBM·Filed 2013·Granted Mar 3, 2015·0 cites·18 claims
- 5051US9947791B2FinFET with merge-free finsGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 17, 2018·0 cites·18 claims
Showing the top 50 of 64 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →