Inventor · disambiguated record
Michael Xuefei Tang
Also filed as: TANG MICHAEL · TANG MICHAEL X · TANG MICHAEL XUEFEI
33 granted patents·11 pending applications·171 citations·filing 2003–2013
97Inventor score
Top patents by PatentIndex Score
44 records- 0195US7881098B2Memory with separate read and write pathsSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Feb 1, 2011·31 cites·15 claims
- 0290US7939188B2Magnetic stack designSEAGATE TECHNOLOGY LLC·Filed 2009·Granted May 10, 2011·19 cites·14 claims
- 0388US8197953B2Magnetic stack designXI HAIWEN·Filed 2011·Granted Jun 12, 2012·7 cites·19 claims
- 0486US7969771B2Semiconductor device with thermally coupled phase change layersSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Jun 28, 2011·17 cites·19 claims
- 0585US8456903B2Magnetic memory with porous non-conductive current confinement layerTANG MICHAEL XUEFEI·Filed 2010·Granted Jun 4, 2013·8 cites·17 claims
- 0685US8097902B2Programmable metallization memory cells via selective channel formingXI HAIWEN·Filed 2008·Granted Jan 17, 2012·10 cites·12 claims
- 0785US7826181B2Magnetic memory with porous non-conductive current confinement layerSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Nov 2, 2010·9 cites·19 claims
- 0884US7750386B2Memory cells including nanoporous layers containing conductive materialSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Jul 6, 2010·12 cites·21 claims
- 0983US8400823B2Memory with separate read and write pathsXI HAIWEN·Filed 2010·Granted Mar 19, 2013·6 cites·18 claims
- 1079US7936585B2Non-volatile memory cell with non-ohmic selection layerSEAGATE TECHNOLOGY LLC·Filed 2009·Granted May 3, 2011·9 cites·20 claims
- 1177US8203865B2Non-volatile memory cell with non-ohmic selection layerTIAN WEI·Filed 2011·Granted Jun 19, 2012·5 cites·20 claims
- 1274US8466525B2Static magnetic field assisted resistive sense elementZHENG YUANKAI·Filed 2011·Granted Jun 18, 2013·3 cites·20 claims
- 1373US8422278B2Memory with separate read and write pathsXI HAIWEN·Filed 2010·Granted Apr 16, 2013·3 cites·12 claims
- 1473US8058646B2Programmable resistive memory cell with oxide layerSUN MING·Filed 2009·Granted Nov 15, 2011·4 cites·17 claims
- 1573US7948045B2Magnet-assisted transistor devicesSEAGATE TECHNOLOGY LLC·Filed 2008·Granted May 24, 2011·4 cites·10 claims
- 1669US8399908B2Programmable metallization memory cells via selective channel formingXI HAIWEN·Filed 2012·Granted Mar 19, 2013·1 cites·20 claims
- 1769US7842938B2Programmable metallization cells and methods of forming the sameSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Nov 30, 2010·2 cites·9 claims
- 1868US8476721B2Magnet-assisted transistor devicesLI YANG·Filed 2011·Granted Jul 2, 2013·2 cites·20 claims
- 1968US7977722B2Non-volatile memory with programmable capacitanceSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Jul 12, 2011·3 cites·13 claims
- 2067US8711608B2Memory with separate read and write pathsSEAGATE TECHNOLOGY LLC·Filed 2013·Granted Apr 29, 2014·2 cites·6 claims
- 2167US8183654B2Static magnetic field assisted resistive sense elementZHENG YUANKAI·Filed 2011·Granted May 22, 2012·2 cites·19 claims
- 2264US7800941B2Magnetic memory with magnetic tunnel junction cell setsSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Sep 21, 2010·5 cites·20 claims
- 2361US8004875B2Current magnitude compensation for memory cells in a data storage arraySEAGATE TECHNOLOGY LLC·Filed 2009·Granted Aug 23, 2011·4 cites·20 claims
- 2461US7786463B2Non-volatile multi-bit memory with programmable capacitanceSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Aug 31, 2010·1 cites·20 claims
- 2559US7999337B2Static magnetic field assisted resistive sense elementSEAGATE TECHNOLOGY LLC·Filed 2009·Granted Aug 16, 2011·2 cites·19 claims
- 2658US2011005920A1Low Temperature Deposition of Amorphous Thin FilmsSEAGATE TECHNOLOGY LLC·Filed 2009·Application pending·0 cites
- 2757US8343801B2Method of forming a programmable metallization memory cellSEAGATE TECHNOLOGY LLC·Filed 2011·Granted Jan 1, 2013·0 cites·18 claims
- 2856US8288753B2Programmable resistive memory cell with oxide layerSUN MING·Filed 2011·Granted Oct 16, 2012·0 cites·14 claims
- 2956US2010141094A1Piezoelectric energy harvesting systemSEAGATE TECHNOLOGY LLC·Filed 2009·Application pending·0 cites
- 3054US2013187115A1Programmable metallization memory cells via selective channel formingSEAGATE TECHNOLOGY LLC·Filed 2013·Application pending·0 cites
- 3153US8334165B2Programmable metallization memory cells via selective channel formingXI HAIWEN·Filed 2010·Granted Dec 18, 2012·0 cites·18 claims
- 3252US8293571B2Programmable metallization cells and methods of forming the sameVENKATASAMY VENKATRAM·Filed 2010·Granted Oct 23, 2012·0 cites·8 claims
- 3352US2010123117A1Non volatile memory cells including a filament growth layer and methods of forming the sameSEAGATE TECHNOLOGY LLC·Filed 2008·Application pending·0 cites
- 3450US8940577B2Programmable metallization cells and methods of forming the sameVENKATASAMY VENKATRAM·Filed 2012·Granted Jan 27, 2015·0 cites·15 claims
- 3550US8766230B2Non-volatile multi-bit memory with programmable capacitanceWANG XUGUANG·Filed 2010·Granted Jul 1, 2014·0 cites·16 claims
- 3649US2010140578A1Non volatile memory cells including a composite solid electrolyte layerSEAGATE TECHNOLOGY LLC·Filed 2009·Application pending·0 cites
- 3746US8466524B2Static magnetic field assisted resistive sense elementZHENG YUANKAI·Filed 2011·Granted Jun 18, 2013·0 cites·20 claims
- 3844US2011267873A1Non-volatile memory with programmable capacitanceSEAGATE TECHNOLOGY LLC·Filed 2011·Application pending·0 cites
- 3943US2010285633A1Non volatile memory cells including a filament growth layer and methods of forming the sameSEAGATE TECHNOLOGY LLC·Filed 2010·Application pending·0 cites
- 4042US2012080317A1ELECTRODEPOSITION OF CoNiP FILMSVENKATASAMY VENKATRAM·Filed 2010·Application pending·0 cites
- 4140US2004226585A1Cleaning systems with monitoring functionsMACRONIX INT CO LTD·Filed 2003·Application pending·0 cites
- 4236US9567850B2System of monitoring rotational time of rotatable equipmentPRILL JONATHAN R·Filed 2009·Granted Feb 14, 2017·0 cites·19 claims
- 4334US2010108975A1Non-volatile memory cell formationSEAGATE TECHNOLOGY LLC·Filed 2008·Application pending·0 cites
- 4432US2005050964A1Apparatus and method of measuring wastewater concentration for determining discharge rateFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →