Assignee
XI HAIWEN
US·18 granted patents·1 pending application·80 citations·filing 2008–2012
Top patents by PatentIndex Score
19 records- 0191US8147995B2Patterned media bits with cladding shellXI HAIWEN·Filed 2009·Granted Apr 3, 2012·10 cites·20 claims
- 0289US8541247B2Non-volatile memory cell with lateral pinningXI HAIWEN·Filed 2010·Granted Sep 24, 2013·8 cites·8 claims
- 0388US8197953B2Magnetic stack designXI HAIWEN·Filed 2011·Granted Jun 12, 2012·7 cites·19 claims
- 0485US8097902B2Programmable metallization memory cells via selective channel formingXI HAIWEN·Filed 2008·Granted Jan 17, 2012·10 cites·12 claims
- 0584US8059450B2Write verify method for resistive random access memoryXI HAIWEN·Filed 2010·Granted Nov 15, 2011·7 cites·20 claims
- 0683US8400823B2Memory with separate read and write pathsXI HAIWEN·Filed 2010·Granted Mar 19, 2013·6 cites·18 claims
- 0783US8179716B2Non-volatile programmable logic gates and addersXI HAIWEN·Filed 2010·Granted May 15, 2012·5 cites·20 claims
- 0880US8599600B2Write verify method for resistive random access memoryXI HAIWEN·Filed 2011·Granted Dec 3, 2013·5 cites·20 claims
- 0977US8482967B2Magnetic memory element with multi-domain storage layerXI HAIWEN·Filed 2010·Granted Jul 9, 2013·5 cites·20 claims
- 1075US8102691B2Magnetic tracks with domain wall storage anchorsXI HAIWEN·Filed 2008·Granted Jan 24, 2012·9 cites·24 claims
- 1173US8422278B2Memory with separate read and write pathsXI HAIWEN·Filed 2010·Granted Apr 16, 2013·3 cites·12 claims
- 1269US8399908B2Programmable metallization memory cells via selective channel formingXI HAIWEN·Filed 2012·Granted Mar 19, 2013·1 cites·20 claims
- 1357US8069492B2Spin-torque probe microscopeXI HAIWEN·Filed 2008·Granted Nov 29, 2011·2 cites·18 claims
- 1453US8659939B2Spin-torque memory with unidirectional write schemeXI HAIWEN·Filed 2012·Granted Feb 25, 2014·0 cites·20 claims
- 1553US8334165B2Programmable metallization memory cells via selective channel formingXI HAIWEN·Filed 2010·Granted Dec 18, 2012·0 cites·18 claims
- 1652US8659852B2Write-once magentic junction memory arrayXI HAIWEN·Filed 2008·Granted Feb 25, 2014·2 cites·20 claims
- 1750US8766382B2MRAM cells including coupled free ferromagnetic layers for stabilizationXI HAIWEN·Filed 2011·Granted Jul 1, 2014·0 cites·21 claims
- 1850US8218356B2Spin-torque memory with unidirectional write schemeXI HAIWEN·Filed 2010·Granted Jul 10, 2012·0 cites·20 claims
- 1948US2010075599A1Data Transmission and Exchange Using Spin WavesXI HAIWEN·Filed 2008·Application pending·0 cites
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