Assignee
ZHENG YUANKAI
US·20 granted patents·2 pending applications·418 citations·filing 2009–2012
Top patents by PatentIndex Score
22 records- 0198US8582253B1Magnetic sensor having a high spin polarization reference layerZHENG YUANKAI·Filed 2012·Granted Nov 12, 2013·160 cites·20 claims
- 0298US8493693B1Perpendicular magnetic recording transducer with AFM insertion layerZHENG YUANKAI·Filed 2012·Granted Jul 23, 2013·154 cites·24 claims
- 0398US8416620B2Magnetic stack having assist layerZHENG YUANKAI·Filed 2010·Granted Apr 9, 2013·46 cites·20 claims
- 0492US8199564B2Thermally assisted multi-bit MRAMZHENG YUANKAI·Filed 2011·Granted Jun 12, 2012·11 cites·20 claims
- 0588US8089132B2Magnetic memory with phonon glass electron crystal materialZHENG YUANKAI·Filed 2009·Granted Jan 3, 2012·12 cites·19 claims
- 0687US8422279B2STRAM with composite free magnetic elementZHENG YUANKAI·Filed 2011·Granted Apr 16, 2013·5 cites·18 claims
- 0784US8405171B2Memory cell with phonon-blocking insulating layerZHENG YUANKAI·Filed 2010·Granted Mar 26, 2013·5 cites·20 claims
- 0884US8294227B2Magnetic stack having reference layers with orthogonal magnetization orientation directionsZHENG YUANKAI·Filed 2011·Granted Oct 23, 2012·4 cites·8 claims
- 0984US8289756B2Non volatile memory including stabilizing structuresZHENG YUANKAI·Filed 2009·Granted Oct 16, 2012·12 cites·23 claims
- 1074US8466525B2Static magnetic field assisted resistive sense elementZHENG YUANKAI·Filed 2011·Granted Jun 18, 2013·3 cites·20 claims
- 1167US8213222B2Magnetic tunnel junction with compensation elementZHENG YUANKAI·Filed 2011·Granted Jul 3, 2012·2 cites·20 claims
- 1267US8183654B2Static magnetic field assisted resistive sense elementZHENG YUANKAI·Filed 2011·Granted May 22, 2012·2 cites·19 claims
- 1360US8462543B2Thermally assisted multi-bit MRAMZHENG YUANKAI·Filed 2012·Granted Jun 11, 2013·1 cites·20 claims
- 1456US8416619B2Magnetic memory with phonon glass electron crystal materialZHENG YUANKAI·Filed 2011·Granted Apr 9, 2013·0 cites·20 claims
- 1555US8194444B2Spin-transfer torque memory self-reference read methodZHENG YUANKAI·Filed 2010·Granted Jun 5, 2012·1 cites·20 claims
- 1647US9030864B2Magnetic tunnel junction with electronically reflective insulative spacerZHENG YUANKAI·Filed 2012·Granted May 12, 2015·0 cites·17 claims
- 1747US8508988B2Magnetic tunnel junction with compensation elementZHENG YUANKAI·Filed 2012·Granted Aug 13, 2013·0 cites·20 claims
- 1846US8519498B2Magnetic stack having reference layers with orthogonal magnetization orientation directionsZHENG YUANKAI·Filed 2012·Granted Aug 27, 2013·0 cites·14 claims
- 1946US8466524B2Static magnetic field assisted resistive sense elementZHENG YUANKAI·Filed 2011·Granted Jun 18, 2013·0 cites·20 claims
- 2044US8289758B2Magnetic tunnel junction with electronically reflective insulative spacerZHENG YUANKAI·Filed 2010·Granted Oct 16, 2012·0 cites·18 claims
- 2142US2012299135A1Non volatile memory including stabilizing structuresZHENG YUANKAI·Filed 2012·Application pending·0 cites
- 2240US2012018788A1Magnetic stack with laminated layerZHENG YUANKAI·Filed 2011·Application pending·0 cites
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