Inventor · disambiguated record
Cornelius Brown Peethala
Also filed as: PEETHALA CORNELIUS B · Peethala Cornelius Brown
71 granted patents·13 pending applications·186 citations·filing 2016–2022
98Inventor score
Top patents by PatentIndex Score
84 records- 0198US9685406B1Selective and non-selective barrier layer wet removalIBM·Filed 2016·Granted Jun 20, 2017·34 cites·14 claims
- 0297US10534276B1Lithographic photomask alignment using non-planar alignment structures formed on waferIBM·Filed 2019·Granted Jan 14, 2020·11 cites·16 claims
- 0397US10204829B1Low-resistivity metallic interconnect structures with self-forming diffusion barrier layersIBM·Filed 2018·Granted Feb 12, 2019·21 cites·13 claims
- 0497US9859218B1Selective surface modification of interconnect structuresIBM·Filed 2016·Granted Jan 2, 2018·16 cites·11 claims
- 0596US10090247B1Semiconductor device formed by wet etch removal of Ru selective to other metalsIBM·Filed 2017·Granted Oct 2, 2018·13 cites·14 claims
- 0694US10361119B1Enlarged contact area structure using noble metal cap and noble metal linerIBM·Filed 2018·Granted Jul 23, 2019·10 cites·20 claims
- 0793US10002831B2Selective and non-selective barrier layer wet removalIBM·Filed 2017·Granted Jun 19, 2018·7 cites·15 claims
- 0893US9806023B1Selective and non-selective barrier layer wet removalIBM·Filed 2017·Granted Oct 31, 2017·8 cites·20 claims
- 0992US10699945B2Back end of line integration for interconnectsIBM·Filed 2018·Granted Jun 30, 2020·5 cites·16 claims
- 1092US10204828B1Enabling low resistance gates and contacts integrated with bilayer dielectricsIBM·Filed 2018·Granted Feb 12, 2019·8 cites·20 claims
- 1191US11171054B2Selective deposition with SAM for fully aligned viaIBM·Filed 2020·Granted Nov 9, 2021·3 cites·16 claims
- 1291US10276434B1Structure and method using metal spacer for insertion of variable wide line implantation in SADP/SAQP integrationIBM·Filed 2018·Granted Apr 30, 2019·6 cites·20 claims
- 1391US9881833B1Barrier planarization for interconnect metallizationIBM·Filed 2016·Granted Jan 30, 2018·6 cites·16 claims
- 1485US10910307B2Back end of line metallization structureIBM·Filed 2018·Granted Feb 2, 2021·3 cites·16 claims
- 1585US10903161B2Back end of line metallization structureIBM·Filed 2019·Granted Jan 26, 2021·3 cites·20 claims
- 1685US9984923B2Barrier layers in trenches and viasIBM·Filed 2016·Granted May 29, 2018·3 cites·18 claims
- 1784US10062560B1Method of cleaning semiconductor deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 28, 2018·3 cites·20 claims
- 1882US10832917B2Low oxygen cleaning for CMP equipmentIBM·Filed 2017·Granted Nov 10, 2020·3 cites·11 claims
- 1981US11018087B2Metal interconnectsIBM·Filed 2018·Granted May 25, 2021·2 cites·6 claims
- 2080US10978388B2Skip via for metal interconnectsIBM·Filed 2018·Granted Apr 13, 2021·3 cites·7 claims
- 2179US10211153B2Low aspect ratio interconnectIBM·Filed 2016·Granted Feb 19, 2019·2 cites·13 claims
- 2278US10937653B2Multiple patterning scheme integration with planarized cut patterningIBM·Filed 2019·Granted Mar 2, 2021·1 cites·19 claims
- 2378US10741748B2Back end of line metallization structuresIBM·Filed 2018·Granted Aug 11, 2020·2 cites·6 claims
- 2478US10586767B2Hybrid BEOL metallization utilizing selective reflection maskIBM·Filed 2018·Granted Mar 10, 2020·2 cites·20 claims
- 2576US10825726B2Metal spacer self aligned multi-patterning integrationIBM·Filed 2018·Granted Nov 3, 2020·2 cites·7 claims
- 2672US10686126B2Back end of line metallization structuresIBM·Filed 2019·Granted Jun 16, 2020·1 cites·9 claims
- 2771US10818589B2Metal interconnect structures with self-forming sidewall barrier layerIBM·Filed 2019·Granted Oct 27, 2020·2 cites·18 claims
- 2871US10658233B2Dielectric damage-free dual damascene Cu interconnects without barrier at via bottomIBM·Filed 2018·Granted May 19, 2020·1 cites·7 claims
- 2971US10373867B2Cobalt contact and interconnect structuresIBM·Filed 2017·Granted Aug 6, 2019·1 cites·19 claims
- 3071US10366879B2Dry and wet etch resistance for atomic layer deposited TiO2 for SIT spacer applicationIBM·Filed 2017·Granted Jul 30, 2019·1 cites·19 claims
- 3171US10242909B2Wet etch removal of Ru selective to other metalsIBM·Filed 2017·Granted Mar 26, 2019·1 cites·22 claims
- 3269US12266607B2Bottom barrier free interconnects without voidsIBM·Filed 2021·Granted Apr 1, 2025·0 cites·18 claims
- 3369US10177030B2Cobalt contact and interconnect structuresIBM·Filed 2017·Granted Jan 8, 2019·1 cites·1 claims
- 3466US11251126B2Replacement metal cap by an exchange reactionIBM·Filed 2020·Granted Feb 15, 2022·0 cites·11 claims
- 3566US11171001B2Multiple patterning scheme integration with planarized cut patterningIBM·Filed 2019·Granted Nov 9, 2021·0 cites·19 claims
- 3666US9947547B2Environmentally green process and composition for cobalt wet etchIBM·Filed 2016·Granted Apr 17, 2018·1 cites·19 claims
- 3765US10957646B2Hybrid BEOL metallization utilizing selective reflection maskIBM·Filed 2020·Granted Mar 23, 2021·0 cites·19 claims
- 3864US11404311B2Metallic interconnect structures with wrap around capping layersIBM·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 3963US11315830B2Metallic interconnect structures with wrap around capping layersIBM·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 4063US2020328156A1Low aspect ratio interconnectTESSERA INC·Filed 2020·Application pending·0 cites
- 4162US11164815B2Bottom barrier free interconnects without voidsIBM·Filed 2019·Granted Nov 2, 2021·0 cites·15 claims
- 4262US10672707B2Low aspect ratio interconnectTESSERA INC·Filed 2019·Granted Jun 2, 2020·0 cites·20 claims
- 4362US10573520B2Multiple patterning scheme integration with planarized cut patterningIBM·Filed 2018·Granted Feb 25, 2020·0 cites·20 claims
- 4460US11101172B2Dielectric damage-free dual damascene Cu interconnects without barrier at via bottomIBM·Filed 2020·Granted Aug 24, 2021·0 cites·17 claims
- 4560US11031339B2Metal interconnectsIBM·Filed 2019·Granted Jun 8, 2021·0 cites·13 claims
- 4660US10896846B2Controlling performance and reliability of conductive regions in a metallization networkIBM·Filed 2019·Granted Jan 19, 2021·0 cites·20 claims
- 4759US12476144B2Etch back and film profile shaping of selective dielectric depositionIBM·Filed 2021·Granted Nov 18, 2025·0 cites·8 claims
- 4859US2020219759A1Back end of line integration for interconnectsIBM·Filed 2020·Application pending·0 cites
- 4958US10714389B2Structure and method using metal spacer for insertion of variable wide line implantation in SADP/SAQP integrationELPIS TECH INC·Filed 2019·Granted Jul 14, 2020·0 cites·20 claims
- 5058US10714382B2Controlling performance and reliability of conductive regions in a metallization networkIBM·Filed 2018·Granted Jul 14, 2020·0 cites·15 claims
Showing the top 50 of 84 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →