Inventor · disambiguated record
Can Bayram
Also filed as: BAYRAM CAN
25 granted patents·6 pending applications·132 citations·filing 2012–2025
95Inventor score
Top patents by PatentIndex Score
31 records- 0197US9059339B1Light emitting diodes with via contact schemeIBM·Filed 2014·Granted Jun 16, 2015·21 cites·20 claims
- 0296US9608160B1Polarization free gallium nitride-based photonic devices on nanopatterned siliconIBM·Filed 2016·Granted Mar 28, 2017·19 cites·17 claims
- 0396US9331076B2Group III nitride integration with CMOS technologyIBM·Filed 2015·Granted May 3, 2016·11 cites·12 claims
- 0496US8916451B2Thin film wafer transfer and structure for electronic devicesIBM·Filed 2013·Granted Dec 23, 2014·29 cites·20 claims
- 0592US9048173B2Dual phase gallium nitride material formation on (100) siliconIBM·Filed 2012·Granted Jun 2, 2015·12 cites·13 claims
- 0691US10027086B2Maximizing cubic phase group III-nitride on patterned siliconUNIV ILLINOIS·Filed 2017·Granted Jul 17, 2018·8 cites·11 claims
- 0789US9059075B2Selective gallium nitride regrowth on (100) siliconIBM·Filed 2013·Granted Jun 16, 2015·7 cites·14 claims
- 0887US9660069B2Group III nitride integration with CMOS technologyIBM·Filed 2016·Granted May 23, 2017·3 cites·15 claims
- 0987US9058990B1Controlled spalling of group III nitrides containing an embedded spall releasing planeIBM·Filed 2013·Granted Jun 16, 2015·8 cites·19 claims
- 1086US12412751B2Large area synthesis of cubic phase gallium nitride on siliconUNIV ILLINOIS·Filed 2023·Granted Sep 9, 2025·1 cites·13 claims
- 1186US9362281B2Group III nitride integration with CMOS technologyIBM·Filed 2015·Granted Jun 7, 2016·3 cites·7 claims
- 1276US2025385099A1Large area synthesis of cubic phase gallium nitride on siliconUNIV ILLINOIS·Filed 2025·Application pending·0 cites
- 1375US9099381B2Selective gallium nitride regrowth on (100) siliconIBM·Filed 2012·Granted Aug 4, 2015·2 cites·16 claims
- 1474US9564526B2Group III nitride integration with CMOS technologyIBM·Filed 2016·Granted Feb 7, 2017·1 cites·19 claims
- 1573US8927398B2Group III nitrides on nanopatterned substratesIBM·Filed 2013·Granted Jan 6, 2015·2 cites·20 claims
- 1670US10957816B2Thin film wafer transfer and structure for electronic devicesIBM·Filed 2013·Granted Mar 23, 2021·2 cites·9 claims
- 1767US9574287B2Gallium nitride material and device deposition on graphene terminated wafer and method of forming the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 21, 2017·1 cites·20 claims
- 1865US9245747B2Engineered base substrates for releasing III-V epitaxy through spallingIBM·Filed 2014·Granted Jan 26, 2016·1 cites·20 claims
- 1965US9236271B2Laser-initiated exfoliation of group III-nitride films and applications for layer transfer and patterningGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 12, 2016·1 cites·9 claims
- 2061US2015122329A1Silicon heterojunction photovoltaic device with non-crystalline wide band gap emitterIBM·Filed 2014·Application pending·0 cites
- 2158US10056251B2Hetero-integration of III-N material on siliconIBM·Filed 2016·Granted Aug 21, 2018·0 cites·7 claims
- 2257US2018315591A1Hetero-integration of iii-n material on siliconIBM·Filed 2018·Application pending·0 cites
- 2355US9601583B2Hetero-integration of III-N material on siliconIBM·Filed 2015·Granted Mar 21, 2017·0 cites·15 claims
- 2455US9391144B2Selective gallium nitride regrowth on (100) siliconGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 12, 2016·0 cites·16 claims
- 2553US2015084074A1Gallium nitride material and device deposition on graphene terminated wafer and method of forming the sameIBM·Filed 2013·Application pending·0 cites
- 2652US9053930B2Heterogeneous integration of group III nitride on silicon for advanced integrated circuitsIBM·Filed 2013·Granted Jun 9, 2015·0 cites·6 claims
- 2752US2014191284A1Group iii nitrides on nanopatterned substratesIBM·Filed 2013·Application pending·0 cites
- 2848US9236251B2Heterogeneous integration of group III nitride on silicon for advanced integrated circuitsGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 12, 2016·0 cites·20 claims
- 2946US9865769B2Back contact LED through spallingIBM·Filed 2015·Granted Jan 9, 2018·0 cites·20 claims
- 3043US2015035123A1Curvature compensated substrate and method of forming sameIBM·Filed 2013·Application pending·0 cites
- 3136US10211328B2Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layerUNIV ILLINOIS·Filed 2017·Granted Feb 19, 2019·0 cites·21 claims
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