Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same

Abstract

A method of forming an epitaxial semiconductor material that includes forming a graphene layer on a semiconductor and carbon containing substrate and depositing a metal containing monolayer on the graphene layer. An epitaxial layer of a gallium containing material is formed on the metal containing monolayer. A layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material is cleaved from the graphene layer that is present on the semiconductor and carbon containing substrate.

What is claimed is: 
     
         1 . A light emitting diode (LED) structure comprising:
 a first contact containing at least one first metal containing layer that is in contact with at least one first gallium containing material layer having a first conductivity type;   an intrinsic semiconductor material layer in contact with the at least one first gallium containing material layer having the first conductivity type;   at least one second gallium containing material layer having a second conductivity type in contact with the intrinsic semiconductor material layer; and   a second contact containing at least one second metal containing layer that is in contact with a surface of the at least one second gallium containing material layer that is opposite a surface of the at least one second gallium containing material that is in direct contact with the intrinsic semiconductor material layer, wherein a surface of one or more of the at least one first gallium containing material layer and the at least one second gallium containing layer is a stepped surface.   
     
     
         2 . The LED structure of  claim 1 , wherein the first conductivity type is an n-type conductivity and the second conductivity type is a p-type conductivity. 
     
     
         3 . The LED structure of  claim 1 , wherein the intrinsic semiconductor layer includes at least one layer of indium gallium nitride. 
     
     
         4 . The LED structure of  claim 1 , wherein one or more of the at least one first gallium containing material layer and the at least one second gallium containing layer has a planar surface. 
     
     
         5 . The LED structure of  claim 1 , wherein the planar surface of the one or more of the at least one first gallium containing material layer and the at least one second gallium containing layer has a roughness of 10 Å or less in an area of 25 μm 2 . 
     
     
         6 . The LED structure of  claim 1 , wherein the surface of the one or more of the at least one first gallium containing material layer and the at least one second gallium containing layer that is stepped has a roughness that is greater than 4 Å in an area of 25 μm 2 . 
     
     
         7 . The LED structure of  claim 1 , wherein at least one of the first contact and the second contact is a multilayered stack of layers of metal of aluminum, titanium, nickel, gold, silver or combinations thereof.