Inventor · disambiguated record
Vassilios Papageorgiou
Also filed as: PAPAGEORGIOU VASSILIOS · PAPAGEORGIOU VASSILIOS P
27 granted patents·3 pending applications·224 citations·filing 1978–2014
96Inventor score
Files withKRONHOLZ STEPHAN8ADVANCED MICRO DEVICES INC5GLOBALFOUNDRIES INC5HOENTSCHEL JAN5MOWRY ANTHONY2
Top patents by PatentIndex Score
30 records- 0198US7855118B2Drive current increase in transistors by asymmetric amorphization implantationADVANCED MICRO DEVICES INC·Filed 2009·Granted Dec 21, 2010·95 cites·20 claims
- 0290US8124467B2Reducing silicide resistance in silicon/germanium-containing drain/source regions of transistorsKRONHOLZ STEPHAN·Filed 2010·Granted Feb 28, 2012·11 cites·18 claims
- 0387US8154084B2Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon materialHOENTSCHEL JAN·Filed 2009·Granted Apr 10, 2012·12 cites·18 claims
- 0486US8227266B2Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regionsMOWRY ANTHONY·Filed 2010·Granted Jul 24, 2012·6 cites·7 claims
- 0583US7713763B2Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regionsADVANCED MICRO DEVICES INC·Filed 2008·Granted May 11, 2010·6 cites·11 claims
- 0683US7206703B1System and method for testing packaged devices using time domain reflectometryADVANCED MICRO DEVICES INC·Filed 2005·Granted Apr 17, 2007·16 cites·15 claims
- 0782US8357573B2Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrodeGLOBALFOUNDRIES INC·Filed 2010·Granted Jan 22, 2013·5 cites·15 claims
- 0881US7616021B2Method and device for determining an operational lifetime of an integrated circuit deviceADVANCED MICRO DEVICES INC·Filed 2007·Granted Nov 10, 2009·14 cites·3 claims
- 0979US8138050B2Transistor device comprising an asymmetric embedded semiconductor alloyPAPAGEORGIOU VASSILIOS·Filed 2009·Granted Mar 20, 2012·7 cites·23 claims
- 1078US8450124B2Adjusting configuration of a multiple gate transistor by controlling individual finsHOENTSCHEL JAN·Filed 2009·Granted May 28, 2013·6 cites·24 claims
- 1176US9035306B2Adjusting configuration of a multiple gate transistor by controlling individual finsGLOBALFOUNDRIES INC·Filed 2013·Granted May 19, 2015·3 cites·15 claims
- 1276US8772878B2Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon materialHOENTSCHEL JAN·Filed 2012·Granted Jul 8, 2014·3 cites·21 claims
- 1375US8202777B2Transistor with an embedded strain-inducing material having a gradually shaped configurationKRONHOLZ STEPHAN·Filed 2009·Granted Jun 19, 2012·5 cites·26 claims
- 1472US8338274B2Transistor device comprising an embedded semiconductor alloy having an asymmetric configurationKRONHOLZ STEPHAN·Filed 2009·Granted Dec 25, 2012·3 cites·25 claims
- 1571US8278174B2In situ formed drain and source regions including a strain-inducing alloy and a graded dopant profileHOENTSCHEL JAN·Filed 2010·Granted Oct 2, 2012·3 cites·18 claims
- 1671US8018260B2Compensation of degradation of performance of semiconductor devices by clock duty cycle adaptationADVANCED MICRO DEVICES INC·Filed 2009·Granted Sep 13, 2011·4 cites·25 claims
- 1769US4282250ARemedy for skin injuries and diseasesPAPAGEORGIOU VASSILIOS·Filed 1978·Granted Aug 4, 1981·10 cites·17 claims
- 1866US8664049B2Semiconductor element formed in a crystalline substrate material and comprising an embedded in situ doped semiconductor materialKRONHOLZ STEPHAN·Filed 2010·Granted Mar 4, 2014·2 cites·22 claims
- 1965US8969916B2Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrodeGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 3, 2015·1 cites·20 claims
- 2056US4560782AAnti-tumor diplatinum coordination compoundsRESEARCH CORP·Filed 1983·Granted Dec 24, 1985·6 cites·8 claims
- 2154US8530894B2Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regionsMOWRY ANTHONY·Filed 2012·Granted Sep 10, 2013·0 cites·7 claims
- 2253US9449826B2Graded well implantation for asymmetric transistors having reduced gate electrode pitchesMULFINGER G ROBERT·Filed 2010·Granted Sep 20, 2016·1 cites·15 claims
- 2353US2014264386A1Performance enhancement in pmos and nmos transistors on the basis of silicon/carbon materialGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 2450US4588831APlatinum complex compounds of substituted 5,8-dihydroxyl-1,4-naphthoquinone, and process for their production and useNATEC·Filed 1984·Granted May 13, 1986·5 cites·6 claims
- 2549US8466520B2Transistor with an embedded strain-inducing material having a gradually shaped configurationKRONHOLZ STEPHAN·Filed 2012·Granted Jun 18, 2013·0 cites·7 claims
- 2649US2010025743A1Transistor with embedded si/ge material having enhanced boron confinementHOENTSCHEL JAN·Filed 2009·Application pending·0 cites
- 2747US8828819B2Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrodeGLOBALFOUNDRIES INC·Filed 2012·Granted Sep 9, 2014·0 cites·21 claims
- 2839US9269631B2Integration of semiconductor alloys in PMOS and NMOS transistors by using a common cavity etch processKRONHOLZ STEPHAN·Filed 2010·Granted Feb 23, 2016·0 cites·17 claims
- 2937US8735253B2Adjusting of a non-silicon fraction in a semiconductor alloy during transistor fabrication by an intermediate oxidation processKRONHOLZ STEPHAN·Filed 2010·Granted May 27, 2014·0 cites·27 claims
- 3036US2010327358A1Semiconductor element formed in a crystalline substrate material and comprising an embedded in situ n-doped semiconductor materialKRONHOLZ STEPHAN·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →