Inventor · disambiguated record
Thomas J. Haigh, Jr.
Also filed as: HAIGH JR THOMAS J · HAIGH JR THOMAS JASPER · HAIGH THOMAS J · HAIGH THOMAS JASPER
25 granted patents·3 pending applications·277 citations·filing 2009–2023
95Inventor score
Top patents by PatentIndex Score
28 records- 0199US10418277B2Air gap spacer formation for nano-scale semiconductor devicesIBM·Filed 2018·Granted Sep 17, 2019·159 cites·20 claims
- 0299US9892961B1Air gap spacer formation for nano-scale semiconductor devicesIBM·Filed 2016·Granted Feb 13, 2018·49 cites·13 claims
- 0396US10115629B2Air gap spacer formation for nano-scale semiconductor devicesIBM·Filed 2017·Granted Oct 30, 2018·8 cites·8 claims
- 0491US11171054B2Selective deposition with SAM for fully aligned viaIBM·Filed 2020·Granted Nov 9, 2021·3 cites·16 claims
- 0590US8779600B2Interlevel dielectric stack for interconnect structuresNGUYEN SON VAN·Filed 2012·Granted Jul 15, 2014·8 cites·14 claims
- 0689US8299365B2Self-aligned composite M-MOx/dielectric cap for Cu interconnect structuresNGUYEN SON VAN·Filed 2010·Granted Oct 30, 2012·10 cites·19 claims
- 0788US9312224B1Interconnect structure containing a porous low k interconnect dielectric/dielectric capIBM·Filed 2014·Granted Apr 12, 2016·9 cites·21 claims
- 0886US11658062B2Air gap spacer formation for nano-scale semiconductor devicesTESSERA LLC·Filed 2019·Granted May 23, 2023·2 cites·27 claims
- 0986US8476743B2C-rich carbon boron nitride dielectric films for use in electronic devicesNGUYEN SON VAN·Filed 2011·Granted Jul 2, 2013·6 cites·16 claims
- 1085US12224203B2Air gap spacer formation for nano-scale semiconductor devicesADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 1185US8652950B2C-rich carbon boron nitride dielectric films for use in electronic devicesIBM·Filed 2013·Granted Feb 18, 2014·5 cites·18 claims
- 1282US9735005B1Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devicesIBM·Filed 2016·Granted Aug 15, 2017·2 cites·9 claims
- 1382US9502288B2Method of forming an interconnect structureNGUYEN SON VAN·Filed 2012·Granted Nov 22, 2016·5 cites·10 claims
- 1478US8492880B2Multilayered low k cap with conformal gap fill and UV stable compressive stress propertiesBALSEANU MIHAELA·Filed 2011·Granted Jul 23, 2013·3 cites·13 claims
- 1573US8536069B2Multilayered low k cap with conformal gap fill and UV stable compressive stress propertiesBALSEANU MIHAELA·Filed 2012·Granted Sep 17, 2013·2 cites·20 claims
- 1671US8637412B2Process to form an adhesion layer and multiphase ultra-low k dielectric material using PECVDGRILL ALFRED·Filed 2011·Granted Jan 28, 2014·2 cites·15 claims
- 1770US8362596B2Engineered interconnect dielectric caps having compressive stress and interconnect structures containing sameIBM·Filed 2009·Granted Jan 29, 2013·4 cites·24 claims
- 1868US11791398B2Nano multilayer carbon-rich low-k spacerIBM·Filed 2020·Granted Oct 17, 2023·0 cites·18 claims
- 1962US2019172704A1ROBUST HIGH PERFORMANCE LOW HYDROGEN SILICON CARBON NITRIDE (SiCNH) DIELECTRICS FOR NANO ELECTRONIC DEVICESIBM·Filed 2019·Application pending·0 cites
- 2060US10937892B2Nano multilayer carbon-rich low-k spacerIBM·Filed 2018·Granted Mar 2, 2021·0 cites·15 claims
- 2160US10242865B2Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devicesIBM·Filed 2017·Granted Mar 26, 2019·0 cites·9 claims
- 2260US10236176B2Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devicesIBM·Filed 2017·Granted Mar 19, 2019·0 cites·20 claims
- 2359US9105642B2Interlevel dielectric stack for interconnect structuresIBM·Filed 2014·Granted Aug 11, 2015·0 cites·26 claims
- 2459US9018767B2Interlevel dielectric stack for interconnect structuresIBM·Filed 2014·Granted Apr 28, 2015·0 cites·5 claims
- 2553US2014203336A1ADHESION LAYER AND MULTIPHASE ULTRA-LOW k DIELECTRIC MATERIALIBM·Filed 2014·Application pending·0 cites
- 2651US11164776B2Metallic interconnect structureIBM·Filed 2019·Granted Nov 2, 2021·0 cites·19 claims
- 2748US11756786B2Forming high carbon content flowable dielectric film with low processing damageIBM·Filed 2019·Granted Sep 12, 2023·0 cites·14 claims
- 2841US2013333923A1MODULATED COMPOSITIONAL AND STRESS CONTROLLED MULTILAYER ULTRATHIN CONFORMAL SiNx DIELECTRICS USED IN NANO DEVICE FABRICATIONBALSEANU MIHAELA·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →