ROBUST HIGH PERFORMANCE LOW HYDROGEN SILICON CARBON NITRIDE (SiCNH) DIELECTRICS FOR NANO ELECTRONIC DEVICES

Abstract

A method for depositing a dielectric layer that includes introducing a substrate into a process chamber of a deposition tool; and heating the substrate to a process temperature. The method may further include introducing precursors that include at least one dielectric providing gas species for a deposited layer and at least one hydrogen precursor gas into the process chamber of the deposition tool. The hydrogen precursor gas is introduced to the deposition chamber at a flow rate ranging from 50 sccm to 5000 sccm. The molar ratio for Hydrogen/Silicon gas precursor can be equal or greater than 0.05.

What is claimed is: 
     
         1 . A method for depositing a silicon and hydrogen containing layer comprising:
 introducing a substrate into a process chamber of a deposition tool;   heating the substrate to a process temperature;   introducing precursors that include at least one dielectric providing gas species for a deposited layer comprising silicon and at least one hydrogen precursor gas into the process chamber of the deposition tool, wherein the hydrogen precursor gas is introduced to the process chamber at a flow rate to provide a molar ration of hydrogen to silicon that is greater than 0.05; and   activating a plasma in the process chamber.   
     
     
         2 . The method of  claim 1 , wherein the flow rate of the hydrogen precursor gas ranges from 50 to 5000 sccm. 
     
     
         3 . The method of  claim 1 , wherein the deposited dielectric is SiCNH. 
     
     
         4 . The method of  claim 1 , wherein the at least one dielectric providing gas species for the deposited layer comprises a silicon containing precursor. 
     
     
         5 . The method of  claim 1 , wherein the at least one dielectric providing gas species for the deposited layer comprises a carbon containing precursor. 
     
     
         6 . The method of  claim 1 , wherein the at least one dielectric providing gas species for the deposited layer comprises a nitrogen containing precursor. 
     
     
         7 . The method of  claim 1 , wherein the SiCNH has a shrinkage that is less than 4.5% after being treated with an ultraviolet curing process for a temperature ranging from 350° C. to 400° C. 
     
     
         8 . A method for depositing a dielectric film comprising:
 introducing a substrate into a chamber of a deposition tool;   heating the substrate to a process temperature;   introducing precursors that include at least one dielectric providing gas species for the deposited layer;   introducing a hydrogen precursor gas at a flow rate greater than 50 sccm; and   activating a plasma in the process chamber to deposit a dielectric material comprised of at least one of silicon, carbon, nitrogen and hydrogen, wherein a greater flow of hydrogen precursor reduces hydrogen incorporation in the dielectric material being deposited so that they hydrogen content is less than 30 wt. %.   
     
     
         9 . The method of  claim 8 , wherein the at least one dielectric providing gas species for the deposited layer comprises at least one of a silicon containing precursor, a carbon containing precursor and a nitrogen containing precursor. 
     
     
         10 . The method of  claim 9 , wherein the silicon containing precursor comprises hexachlorodisilane (Si 2 Cl 6 ), tetrachlorosilane (SiCl 4 ), dichlorosilane (Cl 2 SiH 2 ), trichlorosilane (Cl 3 SiH), methylsilane ((CH 3 )SiH 3 ), dimethylsilane ((CH 3 ) 2 SiH 2 ), trimethyl silane ((CH 3 ) 3 SiH), tetramethyl silane ((CH 3 ) 4 Si), ethylsilane ((CH 3 CH 2 )SiH 3 ), methyldisilane ((CH 3 )Si 2 H 5 ), dimethyldisilane ((CH 3 ) 2 Si 2 H 4 ), hexamethyldisilane ((CH 3 ) 6 Si 2 ) or combinations thereof. 
     
     
         11 . The method of  claim 9 , wherein the nitrogen containing precursor comprises ammonia (NH 3 ), hydrazine (N 2 H 4 ), methyl hydrazine ((CH 3 )HN 2 H 2 ), dimethyl hydrazine ((CH 3 ) 2 N 2 H 2 ), t-butylhydrazine (C 4 H 9 N 2 H 3 ), phenylhydrazine (C 6 H 5 N 2 H 3 ), N 2 , N 2 /H 2 , NH 3 , N 2 H 4  plasmas, 2,2′-azotertbutane ((CH 3 ) 6 C 2 N 2 ), methylazide (CH 3 N 3 ), ethylazide (C 2 H 5 N 3 ), trimethylsilylazide (Me 3 SiN 3 ), or combinations thereof. 
     
     
         12 . The method of  claim 10 , wherein the hydrogen precursor gas is H 2  gas 
     
     
         13 . The method of  claim 12 , wherein the flow rate of the hydrogen precursor ranges from 50 sccm to 5000 sccm. 
     
     
         14 . The method of  claim 8 , wherein the SiCNH has a shrinkage that is less than 4.5% after being treated with an ultraviolet curing process for a temperature ranging from 350° C. to 400° C. 
     
     
         15 . A method for depositing a silicon and hydrogen containing layer comprising:
 introducing precursors that include at least one dielectric providing gas species for a deposited layer formed on a substrate comprising silicon and at least one hydrogen precursor gas into a process chamber of the deposition tool, wherein the hydrogen precursor gas is introduced to the process chamber at a flow rate to provide a molar ration of hydrogen to silicon that is greater than 0.05; and   activating a plasma in the process chamber, the deposited layer having a shrinkage that is less than 4.5% after being treated with an ultraviolet curing process for a temperature ranging from 350° C. to 400° C.   
     
     
         16 . The method of  claim 15 , wherein the at least one dielectric providing gas species for the deposited layer comprises a silicon containing precursor. 
     
     
         17 . The method of  claim 15 , wherein the at least one dielectric providing gas species for the deposited layer comprises a carbon containing precursor. 
     
     
         18 . The method of  claim 15 , wherein the at least one dielectric providing gas species for the deposited layer comprises a nitrogen containing precursor. 
     
     
         19 . The method of  claim 16 , wherein the silicon containing precursor comprises hexachlorodisilane (Si 2 Cl 6 ), tetrachlorosilane (SiCl 4 ), dichlorosilane (Cl 2 SiH 2 ), trichlorosilane (Cl 3 SiH), methylsilane ((CH 3 )SiH 3 ), dimethylsilane ((CH 3 ) 2 SiH 2 ), trimethyl silane ((CH 3 ) 3 SiH), tetramethyl silane ((CH 3 ) 4 Si), ethylsilane ((CH 3 CH 2 )SiH 3 ), methyldisilane ((CH 3 )Si 2 H 5 ), dimethyldisilane ((CH 3 ) 2 Si 2 H 4 ), hexamethyldisilane ((CH 3 ) 6 Si 2 ) or combinations thereof. 
     
     
         20 . The method of  claim 18 , wherein the nitrogen containing precursor comprises ammonia (NH 3 ), hydrazine (N 2 H 4 ), methyl hydrazine ((CH 3 )HN 2 H 2 ), dimethyl hydrazine ((CH 3 ) 2 N 2 H 2 ), t-butylhydrazine (C 4 H 9 N 2 H 3 ), phenylhydrazine (C 6 H 5 N 2 H 3 ), N 2 , N 2 /H 2 , NH 3 , N 2 H 4  plasmas, 2,2′-azotertbutane ((CH 3 ) 6 C 2 N 2 ), methylazide (CH 3 N 3 ), ethylazide (C 2 H 5 N 3 ), trimethylsilylazide (Me 3 SiN 3 ), or combinations thereof.