Inventor · disambiguated record
Brad Herner
Also filed as: HERNER BRAD
11 granted patents·2 pending applications·937 citations·filing 2001–2013
92Inventor score
Top patents by PatentIndex Score
13 records- 0198US7824956B2Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the sameSANDISK 3D LLC·Filed 2007·Granted Nov 2, 2010·101 cites·30 claims
- 0298US7129538B2Dense arrays and charge storage devicesSANDISK 3D LLC·Filed 2004·Granted Oct 31, 2006·203 cites·20 claims
- 0398US6881994B2Monolithic three dimensional array of charge storage devices containing a planarized surfaceMATRIX SEMICONDUCTOR INC·Filed 2001·Granted Apr 19, 2005·515 cites·52 claims
- 0497US8233308B2Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the sameSCHRICKER APRIL·Filed 2007·Granted Jul 31, 2012·80 cites·39 claims
- 0590US8558220B2Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the sameSCHRICKER APRIL·Filed 2007·Granted Oct 15, 2013·17 cites·51 claims
- 0686US7902537B2Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the sameSANDISK 3D LLC·Filed 2007·Granted Mar 8, 2011·8 cites·25 claims
- 0781US8236623B2Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the sameSCHRICKER APRIL·Filed 2007·Granted Aug 7, 2012·7 cites·61 claims
- 0880US8913417B2Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the sameSCHRICKER APRIL·Filed 2012·Granted Dec 16, 2014·3 cites·20 claims
- 0964US8373150B2Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the sameSANDISK 3D LLC·Filed 2011·Granted Feb 12, 2013·1 cites·18 claims
- 1057US2011156044A1Dense arrays and charge storage devicesSANDISK 3D LLC·Filed 2011·Application pending·0 cites
- 1156US8816315B2Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the sameSANDISK 3D LLC·Filed 2013·Granted Aug 26, 2014·0 cites·24 claims
- 1252US7846785B2Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the sameSANDISK 3D LLC·Filed 2007·Granted Dec 7, 2010·2 cites·20 claims
- 1345US2009166610A1Memory cell with planarized carbon nanotube layer and methods of forming the sameSCHRICKER APRIL·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →