Assignee
SANDISK 3D LLC
US·453 granted patents·26 pending applications·12,327 citations·filing 2001–2016
Top patents by PatentIndex Score
479 records- 0199US9227456B2Memories with cylindrical read/write stacksSANDISK 3D LLC·Filed 2013·Granted Jan 5, 2016·188 cites·14 claims
- 0299US7983065B2Three-dimensional array of re-programmable non-volatile memory elements having vertical bit linesSANDISK 3D LLC·Filed 2009·Granted Jul 19, 2011·306 cites·41 claims
- 0399US7915164B2Method for forming doped polysilicon via connecting polysilicon layersSANDISK 3D LLC·Filed 2010·Granted Mar 29, 2011·251 cites·7 claims
- 0499US7888205B2Highly scalable thin film transistorSANDISK 3D LLC·Filed 2010·Granted Feb 15, 2011·95 cites·14 claims
- 0599US7859884B2Structure and method for biasing phase change memory array for reliable writingSANDISK 3D LLC·Filed 2007·Granted Dec 28, 2010·121 cites·20 claims
- 0699US7851851B2Three dimensional NAND memorySANDISK 3D LLC·Filed 2007·Granted Dec 14, 2010·232 cites·20 claims
- 0799US7848145B2Three dimensional NAND memorySANDISK 3D LLC·Filed 2007·Granted Dec 7, 2010·227 cites·13 claims
- 0899US7829875B2Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuseSANDISK 3D LLC·Filed 2006·Granted Nov 9, 2010·132 cites·31 claims
- 0999US7808038B2Method of making three dimensional NAND memorySANDISK 3D LLC·Filed 2007·Granted Oct 5, 2010·218 cites·20 claims
- 1099US7745265B2Method of making three dimensional NAND memorySANDISK 3D LLC·Filed 2007·Granted Jun 29, 2010·219 cites·8 claims
- 1199US7575973B2Method of making three dimensional NAND memorySANDISK 3D LLC·Filed 2007·Granted Aug 18, 2009·330 cites·14 claims
- 1299US7514321B2Method of making three dimensional NAND memorySANDISK 3D LLC·Filed 2007·Granted Apr 7, 2009·229 cites·5 claims
- 1399US7426128B2Switchable resistive memory with opposite polarity write pulsesSANDISK 3D LLC·Filed 2005·Granted Sep 16, 2008·148 cites·31 claims
- 1499US7405465B2Deposited semiconductor structure to minimize n-type dopant diffusion and method of makingSANDISK 3D LLC·Filed 2005·Granted Jul 29, 2008·130 cites·20 claims
- 1599US7238607B2Method to minimize formation of recess at surface planarized by chemical mechanical planarizationSANDISK 3D LLC·Filed 2005·Granted Jul 3, 2007·162 cites·19 claims
- 1699US7233024B2Three-dimensional memory device incorporating segmented bit line memory arraySANDISK 3D LLC·Filed 2003·Granted Jun 19, 2007·239 cites·37 claims
- 1799US7176064B2Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicideSANDISK 3D LLC·Filed 2004·Granted Feb 13, 2007·337 cites·6 claims
- 1899US7177191B2Integrated circuit including memory array incorporating multiple types of NAND string structuresSANDISK 3D LLC·Filed 2004·Granted Feb 13, 2007·335 cites·29 claims
- 1999US7177169B2Word line arrangement having multi-layer word line segments for three-dimensional memory arraySANDISK 3D LLC·Filed 2005·Granted Feb 13, 2007·128 cites·32 claims
- 2099US7081377B2Three-dimensional memorySANDISK 3D LLC·Filed 2002·Granted Jul 25, 2006·277 cites·7 claims
- 2198US9646688B2Three dimensional non-volatile storage with connected word linesSANDISK 3D LLC·Filed 2015·Granted May 9, 2017·12 cites·14 claims
- 2298US9343507B2Dual channel vertical field effect transistor including an embedded electrodeSANDISK 3D LLC·Filed 2014·Granted May 17, 2016·75 cites·38 claims
- 2398US8958228B2Non-volatile memory having 3D array of read/write elements with vertical bit lines and select devices and methods thereofSANDISK 3D LLC·Filed 2014·Granted Feb 17, 2015·59 cites·12 claims
- 2498US8933516B1High capacity select switches for three-dimensional structuresSANDISK 3D LLC·Filed 2013·Granted Jan 13, 2015·26 cites·15 claims
- 2598US8853765B2Dense arrays and charge storage devicesSANDISK 3D LLC·Filed 2014·Granted Oct 7, 2014·28 cites·30 claims
- 2698US8823076B2Dense arrays and charge storage devicesSANDISK 3D LLC·Filed 2014·Granted Sep 2, 2014·32 cites·26 claims
- 2798US7875871B2Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitrideSANDISK 3D LLC·Filed 2006·Granted Jan 25, 2011·120 cites·14 claims
- 2898US7830697B2High forward current diodes for reverse write 3D cellSANDISK 3D LLC·Filed 2007·Granted Nov 9, 2010·57 cites·20 claims
- 2998US7824956B2Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the sameSANDISK 3D LLC·Filed 2007·Granted Nov 2, 2010·101 cites·30 claims
- 3098US7825455B2Three terminal nonvolatile memory device with vertical gated diodeSANDISK 3D LLC·Filed 2009·Granted Nov 2, 2010·55 cites·18 claims
- 3198US7745312B2Selective germanium deposition for pillar devicesSANDISK 3D LLC·Filed 2008·Granted Jun 29, 2010·89 cites·33 claims
- 3298US7733685B2Cross point memory cell with distributed diodes and method of making sameSANDISK 3D LLC·Filed 2008·Granted Jun 8, 2010·102 cites·29 claims
- 3398US7667999B2Method to program a memory cell comprising a carbon nanotube fabric and a steering elementSANDISK 3D LLC·Filed 2007·Granted Feb 23, 2010·59 cites·13 claims
- 3498US7656734B2Methods and apparatus for extending the effective thermal operating range of a memorySANDISK 3D LLC·Filed 2007·Granted Feb 2, 2010·81 cites·17 claims
- 3598US7575984B2Conductive hard mask to protect patterned features during trench etchSANDISK 3D LLC·Filed 2006·Granted Aug 18, 2009·111 cites·17 claims
- 3698US7566974B2Doped polysilicon via connecting polysilicon layersSANDISK 3D LLC·Filed 2004·Granted Jul 28, 2009·190 cites·17 claims
- 3798US7362604B2Apparatus and method for programming an array of nonvolatile memory cells including switchable resistor memory elementsSANDISK 3D LLC·Filed 2005·Granted Apr 22, 2008·73 cites·60 claims
- 3898US7345907B2Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elementsSANDISK 3D LLC·Filed 2005·Granted Mar 18, 2008·91 cites·46 claims
- 3998US7319053B2Vertically stacked field programmable nonvolatile memory and method of fabricationSANDISK 3D LLC·Filed 2006·Granted Jan 15, 2008·51 cites·3 claims
- 4098US7285464B2Nonvolatile memory cell comprising a reduced height vertical diodeSANDISK 3D LLC·Filed 2004·Granted Oct 23, 2007·139 cites·33 claims
- 4198US7233522B2NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of sameSANDISK 3D LLC·Filed 2003·Granted Jun 19, 2007·320 cites·44 claims
- 4298US7221588B2Memory array incorporating memory cells arranged in NAND stringsSANDISK 3D LLC·Filed 2003·Granted May 22, 2007·259 cites·15 claims
- 4398US7129538B2Dense arrays and charge storage devicesSANDISK 3D LLC·Filed 2004·Granted Oct 31, 2006·203 cites·20 claims
- 4497US9653617B2Multiple junction thin film transistorSANDISK 3D LLC·Filed 2015·Granted May 16, 2017·43 cites·19 claims
- 4597US9620712B2Concave word line and convex interlayer dielectric for protecting a read/write layerSANDISK 3D LLC·Filed 2014·Granted Apr 11, 2017·32 cites·35 claims
- 4697US9443910B1Silicided bit line for reversible-resistivity memorySANDISK 3D LLC·Filed 2015·Granted Sep 13, 2016·28 cites·25 claims
- 4797US9230985B1Vertical TFT with tunnel barrierSANDISK 3D LLC·Filed 2014·Granted Jan 5, 2016·107 cites·20 claims
- 4897US8351236B2Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architectureSANDISK 3D LLC·Filed 2010·Granted Jan 8, 2013·26 cites·18 claims
- 4997US7935553B2Method for fabricating high density pillar structures by double patterning using positive photoresistSANDISK 3D LLC·Filed 2010·Granted May 3, 2011·27 cites·13 claims
- 5097US7869258B2Reverse set with current limit for non-volatile storageSANDISK 3D LLC·Filed 2008·Granted Jan 11, 2011·54 cites·26 claims
Showing the top 50 of 479 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when SANDISK 3D LLC files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →