Inventor · disambiguated record
Hisato Oyamatsu
Also filed as: OYAMATSU HISATO
34 granted patents·6 pending applications·544 citations·filing 1994–2016
97Inventor score
Top patents by PatentIndex Score
40 records- 0195US6835981B2Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regionsTOSHIBA KK·Filed 2001·Granted Dec 28, 2004·88 cites·16 claims
- 0293US6734506B2Semiconductor device including a plurality of kinds of MOS transistors having different gate widths and method of manufacturing the sameTOSHIBA KK·Filed 2001·Granted May 11, 2004·62 cites·4 claims
- 0388US6906384B2Semiconductor device having one of patterned SOI and SON structureTOSHIBA KK·Filed 2002·Granted Jun 14, 2005·44 cites·19 claims
- 0485US7098146B2Semiconductor device having patterned SOI structure and method for fabricating the sameTOSHIBA KK·Filed 2005·Granted Aug 29, 2006·10 cites·3 claims
- 0584US6724046B2Semiconductor device having patterned SOI structure and method for fabricating the sameTOSHIBA KK·Filed 2002·Granted Apr 20, 2004·30 cites·11 claims
- 0683US5923969AMethod for manufacturing a semiconductor device having a limited pocket regionTOSHIBA KK·Filed 1997·Granted Jul 13, 1999·52 cites·19 claims
- 0780US6855976B2Semiconductor device using partial SOI substrate and manufacturing method thereofTOSHIBA KK·Filed 2002·Granted Feb 15, 2005·24 cites·8 claims
- 0876US7018904B2Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the sameTOSHIBA KK·Filed 2004·Granted Mar 28, 2006·17 cites·13 claims
- 0974US7148543B2Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regionsTOSHIBA KK·Filed 2004·Granted Dec 12, 2006·16 cites·17 claims
- 1072US7439112B2Semiconductor device using partial SOI substrate and manufacturing method thereofTOSHIBA KK·Filed 2006·Granted Oct 21, 2008·4 cites·5 claims
- 1171US5424229AMethod for manufacturing MOSFET having an LDD structureTOSHIBA KK·Filed 1994·Granted Jun 13, 1995·31 cites·8 claims
- 1268US9041130B2Magnetic memory deviceTOSHIBA KK·Filed 2014·Granted May 26, 2015·1 cites·20 claims
- 1367US7187035B2Semiconductor device comprising multiple layers with trenches formed on a semiconductor substrateTOSHIBA KK·Filed 2002·Granted Mar 6, 2007·9 cites·5 claims
- 1467US6768182B2Semiconductor deviceTOSHIBA KK·Filed 2001·Granted Jul 27, 2004·12 cites·3 claims
- 1565US7741159B2Semiconductor device having channel with cooling fluid and manufacturing method thereofTOSHIBA KK·Filed 2009·Granted Jun 22, 2010·2 cites·9 claims
- 1663US8735181B2Manufacturing system for semiconductor device capable of controlling variation in electrical property of element in wafer surface and method for manufacturing the semiconductor deviceFUJII OSAMU·Filed 2008·Granted May 27, 2014·2 cites·5 claims
- 1761US6861374B2Semiconductor device having patterned SOI structure and method for fabricating the sameTOSHIBA KK·Filed 2004·Granted Mar 1, 2005·7 cites·10 claims
- 1861US6204539B1Semiconductor apparatus and manufacturing method thereforTOSHIBA KK·Filed 1999·Granted Mar 20, 2001·20 cites·20 claims
- 1961US6197648B1Manufacturing method of MOSFET having salicide structureTOSHIBA KK·Filed 1998·Granted Mar 6, 2001·21 cites·8 claims
- 2058US6828222B2Method for manufacturing multilayer wiring structure semiconductor deviceTOSHIBA KK·Filed 2003·Granted Dec 7, 2004·7 cites·6 claims
- 2158US6593654B2Semiconductor device and method for manufacturing sameTOSHIBA KK·Filed 1999·Granted Jul 15, 2003·19 cites·13 claims
- 2255US6261920B1N-channel MOSFET having STI structure and method for manufacturing the sameTOSHIBA KK·Filed 1999·Granted Jul 17, 2001·20 cites·6 claims
- 2355US6091130ASemiconductor device having structure suitable for CMP processTOSHIBA KK·Filed 1997·Granted Jul 18, 2000·20 cites·24 claims
- 2453USRE42180ESemiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted Mar 1, 2011·0 cites·50 claims
- 2553US7521300B2Semiconductor device substrate including a single-crystalline layer and method of manufacturing semiconductor device substrateTOSHIBA KK·Filed 2006·Granted Apr 21, 2009·0 cites·7 claims
- 2651US7569931B2Cooling semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2006·Granted Aug 4, 2009·0 cites·13 claims
- 2750US2015228695A1Magnetic memory deviceTOSHIBA KK·Filed 2015·Application pending·0 cites
- 2849US7112822B2Semiconductor device using partial SOI substrate and manufacturing method thereofTOSHIBA KK·Filed 2004·Granted Sep 26, 2006·2 cites·9 claims
- 2943US7176536B2Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Feb 13, 2007·1 cites·8 claims
- 3043US6833301B2Semiconductor device with an improved gate electrode pattern and a method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Dec 21, 2004·1 cites·9 claims
- 3143US6815280B2Method of manufacturing a semiconductor device including a plurality of kinds of MOS transistors having different gate widthsTOKYO SHIBAURA ELECTRIC CO·Filed 2004·Granted Nov 9, 2004·0 cites·4 claims
- 3241US2004227206A1Semiconductor deviceTOSHIBA KK·Filed 2004·Application pending·0 cites
- 3340US5512500AMethod of fabricating semiconductor deviceTOSHIBA KK·Filed 1995·Granted Apr 30, 1996·8 cites·4 claims
- 3440US2007267680A1Semiconductor integrated circuit deviceTOSHIBA KK·Filed 2007·Application pending·0 cites
- 3540US2017249210A1Memory device and memory systemTOSHIBA KK·Filed 2016·Application pending·0 cites
- 3640US2003201512A1Semiconductor device having one of patterned SOI and SON structureFiled 2003·Application pending·0 cites
- 3740US2003102530A1Semiconductor wafer, method of manufacturing the same and semiconductor deviceTOSHIBA KK·Filed 2003·Application pending·0 cites
- 3838US6653695B2Semiconductor device with an improved gate electrode patternTOSHIBA KK·Filed 1999·Granted Nov 25, 2003·4 cites·29 claims
- 3938US6525402B1Semiconductor wafer, method of manufacturing the same and semiconductor deviceTOSHIBA KK·Filed 1999·Granted Feb 25, 2003·6 cites·6 claims
- 4034US5691564ASemiconductor device with high speed operation and high integrationTOSHIBA KK·Filed 1995·Granted Nov 25, 1997·4 cites·12 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →